#9 | SPRING 2008 posted May 14, 2008
Why you should never say never
A listing of key events for the advanced substrate community
Revelant papers from recent conferences and journals
Fully Depleted (FD)-SOI:
The Future Approaches
As scaling becomes more challenging, the quest for ever higher performance and lower power is moving FD-SOI investigations into high gear.
THE BASICS
Fully Depleted (FD) vs. Partially Depleted (PD) SOI
FD-SOI enables the use of a slightly different transistor structure than PD-SOI. Each has advantages and disadvantages. Here is a quick layman's guide to the differences.
Partially depleted SOI has been successfully leveraged for high-performance microprocessors and most other SOI applications for almost a decade. Although OKI has used FD-SOI commercially for a long time, its focus has always been on niche ultra-low power applications. Now, the high-performance world is looking at advanced devices such as ultra-thin body FDSOI MOSFETs and multiple-gate MOSFETs (aka MuGFETs) as potential ways to drastically cut power consumption and leakage while preserving high performance and minimizing short channel effects, probably starting with the 22nm node. See the following graphic and table for an indication of the basic differences between PD and FD SOI.
