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Chirac Awards Innovation Prize to Soitec
During an Elysée ceremony,
the French president cited the
company’s international growth
and employment creation.
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At a ceremony held at the presidential
Elysée Palace in March, French President
Jacques Chirac awarded Soitec the “2006
Boldness and Creativity Award” (Prix de
l’Audace Créatrice).
The prize, awarded yearly, recognizes the
achievements of a listed company that is
particularly dynamic, that has posted
strong growth and profitability, and also
has created significant employment
opportunities in France. Initially created in
1995, its goal is to promote the entrepreneurial
spirit and support bold initiatives.
Accepting on behalf of the company, Soitec
President and co-founder André-Jacques
Auberton-Hervé said, “This honor rewards
the efforts of everyone at our company –
that in less than 14 years, Soitec should
become a veritable engine for growth and
the top player in its market.”
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Soitec was created in 1992 by Jean-Michel Lamure and André-Jacques
Auberton-Hervé, two research engineers
from the French national CEA/Léti
electronics lab, to commercialize Smart
Cut™ wafer engineering technology. Listed
on the Euronext Paris stock exchange,
Soitec posted 04/05 sales of 138.9 million
Euros. With sales growing by about 80%
in the current fiscal year, the company now
counts over 750 employees and an 8%
R&D investment rate.
The 2006 Boldness and Creativity Award
was chosen by a 14-person jury lead by
the Finalac Group, and comprising the
presidents of companies such as AXA,
Lagardère, Dassault, Group Danone, SEB,
Essilor, Club Med and Renault.
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IEEE/EDS Accolades for SOI Innovators
Top honors go to advanced substrate pioneers – again.
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For the second year in a row, the IEEE
Electron Devices Society (EDS) gave
the J.J. Ebers Award for “…outstanding
technical contributions to electron devices”
to an SOI pioneer. The 2005 honor went
to Bijan Davari of IBM, now Vice President
of Next Generation Computing Systems/
Technology.
The awards program noted that Dr. Davari
and his team at IBM’s Semiconductor
Research and Development Center were
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responsible for the definition and development
of pioneering technologies such as
SOI, among their many accomplishments.
The previous year’s award went to SOI
modeling innovator Jerry G. Fossum.
Another top EDS honor, the George
E. Smith Award, went to the MIT and
Amberwave team of Zhi-Yuan Charles
Cheng, Arthur J. Pitera, Minjoo Larry
Lee, Jongwan Jung, Judy L. Hoyt, Dimitri
A. Antoniadis and Eugene A. Fitzgerald
for their paper entitled, “Fully Depleted
Strained-SOI n- and p-MOSFETs on
Bonded SGOI Substrates and Study of the
SiGe/BOX Interface.” The paper covered
FD-SGOI research conducted at MIT.
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IBM + SOI Yield More Honors
Company received top White House medal and SI Fab of the Year.
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Recently, IBM has been lining up awards
for technology leadership, often citing the
company’s work in SOI.
IBM’s 300-mm, SOI-enabled Building 323
in East Fishkill, NY, was selected as the
Semiconductor International 2005 Top Fab
Award winner. According to the publication,
"IBM has produced products at competitive
cycle times, cost and defect densities, with
an excellent ‘first-time-right’ track record."
At the end of 2005, IBM also received
the 2004 National Medal of Technology
from the U.S. Department of Commerce
and the Technology Administration. The
award, which is the nation’s highest honor
for leading innovators, recognized IBM
for over four decades of innovation in
semiconductor technology, specifically
citing SOI among the advances.
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