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CELLs Multiply

IBM, Sony/SCEI and Toshiba are actively encouraging the proliferation of CELL applications

The most celebrated of Cell applications, Sony’s PlayStation® 3, is due out next spring. In the meantime, the SOI-based Cell Broadband Engine (CBE) microprocessor, as it is officially known, is getting a big push from its joint developers: Sony Computer Entertainment, Inc. (SCEI), Sony, Toshiba and IBM.

From the very beginning, SOI advantages such as higher performance and lower power have been top priorities. “We believe the Cell design, and the advanced technologies like SOI with which it will be manufactured, will help change the way people work, play and communicate”, commented Dr. John Kelly, senior vice president and group executive for the IBM Technology Group.

In a recent IBM developerWorks interview, Power Everywhere™ systems offerings program director Dan Greenberg cited a wide range of potential Cell applications. “High-performance consumer electronics like digital television (DTV) and home media servers, some of which have already been announced by Sony and Toshiba, will use Cell”, he said. He also cited 3D imaging applications such as Magnetic Resonance Imaging (MRI) for medical scanners, CT scanners, ultrasound, radar and sonar, as well as security and surveillance.
   
Some Cell Specs:
Observed clock speed: >4GHz.
A wide range of operating frequencies are supported to optimize for power and yield.
Peak performance (single precision): >256 GFlops
Peak performance (double precision): >26 GFlops
Local storage size per Synergistic
Processor Unit (SPU): 256KB
Area: 221 mm2
Technology: 90nm SOI
Total number of transistors: 234M

A recent Sony statement indicated that the company is creating a division to promote the development of Cell processor-related technology, products and applications, reporting directly to Sony's CEO. In parallel, Sony and its computer entertainment division are actively courting the PlayStation® developer community. 71 developer/publishers have already signed on to develop over 100 titles. And last fall, SCEI and IBM announced a rack-mount version of a prototype Cell workstation for digital content creation that could hit 16 teraflops.

Toshiba, too, recently announced its Cell Chip Set and Cell Reference Set, putting the emphasis on its powerful broadband capabilities. “Software developers and other customers will be eager to make full use of Cell's unsurpassed multitasking and real-time processing functions,” said Tomotaka Saito, General Manager of Broadband System LSI Division, Toshiba Corporation Semiconductor Company.

With the Cell heralding the new metric of “performance per watt”, SOI and advanced substrates are poised to enter an array of new markets.


For more information, see:
IBM: www.research.ibm.com/cell
Sony/SCEI: cell.scei.co.jp
Toshiba: www.toshiba.co.jp
   
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SOI in Japan: Full Circle

SOI got its start in Japan. Now in a raft of new applications, its home again

Japan’s NTT launched the worldwide SOI revolution 27 years ago when it developed the SIMOX (Separation by IMplanted OXygen) process, and gave the first demonstration of an SOI device. Then, with the advent of wafer bonding and Smart Cut™ technology in the early 1990’s, SOI started reaching beyond niche applications.

Mitsubishi announced the production of a low-power gate array on SOI in the fall of 1997. And Oki Electric has lead the world by producing fully-depleted SOI-based system-on-chip (SoC) LSI’s. For several years now, these chips have been integrated into the products of leading watchmakers, such as in Casio’s popular Atomic-Solar G-Shock watches. SOI-based chips are also being used by automotive suppliers such as Denso, and computer makers like Fujitsu are building systems around SOI-based chips from AMD.

Lead by the Sony/Toshiba/IBM “Cell” processor, new generations of high-end, mobile and entertainment applications are being launched. The production of the Cell processor and its implementation in the next generations of PlayStations® and related applications in media, entertainment and video games, will undoubtedly mark a Japanese milestone in SOI.

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Xbox® 360 Debuts New Gaming Generation

Microsoft’s custom PowerPC chip by IBM is based on SOI

Microsoft’s Xbox 360, which is expected to fly out of the stores this holiday season, has some very impressive figures to cite. The three-core PowerPC-based CPU, custom-made for Microsoft by IBM, boasts one teraflop of floating-point performance.

The chip is the fruition of a semiconductor technology agreement between Microsoft and IBM Corp. Under the agreement, Microsoft has licensed leading-edge semiconductor processor technology from IBM for use in Xbox products and services. According to Bernie Meyerson, IBM Fellow and chief technologist for IBM's Technology Group, the new Xbox technologies are based on the latest in IBM's family of state-of-the-art processors. That means 90nm SOI, copper, strained silicon and low-k.

With such a cornerstone, new horizons are opened. “Xbox 360 will transform the way people play games and have fun,” says Robbie Bach, Senior Vice President and Chief Xbox Officer, Home and Entertainment Division, Microsoft Corporation.
   
Some Xbox 360 Specs:
Custom IBM PowerPC-based CPU
90nm SOI
Three 3.2 GHz symmetrical cores
Two hardware threads per core;
six hardware threads total
VMX-128 vector unit per core; three total
1 MB L2 cache

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Fab Floor Tip: Running SOI in RTP
by Pierre Cemeli, Field Applications Engineer, Soitec

A quick guide to successful rapid thermal processing of SOI wafers

Some engineers have indicated that they encounter challenges when running SOI wafers in rapid thermal processing (RTP). Why is this specific to SOI?

First, the layer stack of an SOI wafer has a different reflectivity spectrum than a bulk wafer. It absorbs less lamp radiation than bare silicon.

Second, SOI has a crown. This non-SOI region at the edge of the wafer behaves as bulk. Constraints may appear during RTP due to an imbalance in temperature between the center and the very edge of the wafer. Dopant activation may vary from the center to the edge and affect device performance. Eventually, slip lines could appear.

In RTP, it is common to start heating-up a wafer using open-loop control, since pyrometers are not accurate at low temperatures. As less energy is absorbed by SOI, at the end of the open loop step the temperature of the wafer is lower. This is automatically compensated during the next close loop step by extra energy to the lamps. This leads to constraints in the transition region between SOI and the wafer crown.

Some machines have an edge ring. This ring is hot when the wafer enters the chamber. If the SOI wafer is not sufficiently pre-heated prior to entering in contact with the ring, there may be a thermal shock between the “cold” wafer and the “hot” ring, which could in turn generate slip lines and/or wafer deformation.

Those effects can be managed by increasing the output power or time of the open loop steps to make sure the SOI wafer has reached the desired temperature prior to the next step. Additionally, side/periphery lamps need to be adjusted to compensate for the crown effect. Finally, you should adjust the recipe and correction table for growing and measuring the uniformity of Oxide on SOI rather than on bulk silicon. Ellipsometry becomes mandatory to measure this three-layer stack.
 
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Dawn of a New Age of Chip Technology

by Tsugio Makimoto
IEEE Fellow, President, TechnoVision

Following a long and distinguished career at Sony and Hitachi, an industry visionary reflects on what's to come

For about the past four decades, chip progress was achieved by “shrinking”. Things were simple because three factors - speed, power and density - were improved simultaneously.

In the case of advanced nano devices, leakage current, mobility decrease and wiring delay present additional challenges. New materials and new structures are needed to overcome these drawbacks.

We are now at the dawn of a new age of chip technology wherein SOI technology is a very important element. Devices using SOI are in the early stages of commercialization, including MPUs, watch chips and game chips.

It reminds me of the early days of high speed CMOS technology in late 1970’s, when the industry consensus was: “CMOS is a niche technology for low power”. A high speed 4K SRAM (Hitachi’s 6147) developed in 1979 was the beginning of CMOS evolution. Since then, “quantity and cost” were put on the route of spiraling progress and the whole world changed.

I believe SOI is now at the leading edge of the upward spiral of progress, facilitating the positive feedback of “quantity and cost”. It is the beginning of an SOI evolution towards the exciting future.

Dr. Makimoto recently retired as Corporate Advisor of Sony, where he was instrumental in driving the company’s key semiconductor technology. Prior to that, he held strategic positions at Hitachi for over 40 years. Co-author of the celebrated book, “Digital Nomad” (Wiley, 1997), he is currently a consultant in the field of electronics.
 
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