The research group Current Analysis announced that in September 2005, for the first time ever, AMD had topped Intel in U.S. retail desktop sales for an entire month. The driving force was HP’s Pavilion a1130n, offering AMD’s SOI-based Athlon™ 64 processor.

IBM has started shipping its new System z9 mainframe line, the first of a new generation of mainframes based on CMOS 10S-SOI technology.

Kopin Corporation announced that Eastman Kodak Company is incorporating Kopin's SOI-based CyberEVF(R) 230K viewfinders into its new Kodak EasyShare
P-Series cameras.


At the “2005 Symposium on VLSI Technology” (Kyoto, Japan), one of the industry’s most influential conferences, over 20% of the papers presented technologies using SOI substrates.

Renesas Technology announced that it has developed a high-density capacitorless “floating body” twin-transistor RAM (TTRAM), which it says will allow fast, high density storage to be embedded in power-efficient system-on-a-chip devices built with 65-nm SOI CMOS.

National Semiconductor credits SOI for many of the advantages of its new VIP50 BiCMOS analog process technology, which it says dramatically improves the performance of its next-generation precision and low-power, low-voltage operational amplifiers, especially for industrial and automotive applications.

Oki Electric announced the development of an SOI-CMOS transistor that succeeds in reducing standby consumption current (off-leak current) by over 90% compared to previous transistors, while maintaining device performance.

Zarlink Semiconductor has introduced what it says is the industry’s fastest commercially available SOI bipolar process. Target applications include the high-voltage, high-speed analog product requirements of DVD players, digital video recorders, and ADSL modems.

By adding production output on a steady year-to-year basis, AMD’s new 300mm Fab 36 in Dresden has the potential to ship as many as 100 million units in 2008, helping the company to meet growing demand for its SOI-based AMD64 processors. AMD expects the fab to be substantially converted to 65nm in by mid-2007.