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The research group Current
Analysis announced that in
September 2005, for the first
time ever, AMD had topped
Intel in U.S. retail desktop sales
for an entire month. The driving
force was HP’s Pavilion a1130n,
offering AMD’s SOI-based
Athlon™ 64 processor.
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IBM has started shipping its new
System z9 mainframe line, the
first of a new generation of
mainframes based on CMOS
10S-SOI technology.
•
Kopin Corporation announced
that Eastman Kodak Company is
incorporating Kopin's SOI-based
CyberEVF(R) 230K viewfinders
into its new Kodak EasyShare
P-Series cameras.
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At the “2005 Symposium on
VLSI Technology” (Kyoto,
Japan), one of the industry’s most
influential conferences, over
20% of the papers presented
technologies using SOI substrates.
•
Renesas Technology announced
that it has developed a
high-density capacitorless
“floating body” twin-transistor
RAM (TTRAM), which it says will
allow fast, high density storage
to be embedded in power-efficient
system-on-a-chip devices built with
65-nm SOI CMOS.
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National Semiconductor credits
SOI for many of the advantages
of its new VIP50 BiCMOS
analog process technology,
which it says dramatically
improves the performance
of its next-generation precision
and low-power, low-voltage
operational amplifiers,
especially for industrial and
automotive applications.
•
Oki Electric announced the
development of an SOI-CMOS
transistor that succeeds in
reducing standby consumption
current (off-leak current) by over
90% compared to previous
transistors, while maintaining
device performance.
•
Zarlink Semiconductor has
introduced what it says is the
industry’s fastest commercially
available SOI bipolar process.
Target applications include the
high-voltage, high-speed analog
product requirements of DVD
players, digital video recorders,
and ADSL modems.
•
By adding production output
on a steady year-to-year basis,
AMD’s new 300mm Fab 36 in
Dresden has the potential to ship
as many as 100 million units in
2008, helping the company
to meet growing demand for its
SOI-based AMD64 processors.
AMD expects the fab to be
substantially converted to 65nm
in by mid-2007.
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