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TowerJazz — Interview With SVP Marco Racanelli: What’s Driving Strong SOI-Based Design Wins? Thumbnail

TowerJazz — Interview With SVP Marco Racanelli: What’s Driving Strong SOI-Based Design Wins?

Posted on September 11, 2014
In Design & Manufacturing, News & Viewpoints
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            ASN recently spoke with TowerJazz SVP Marco Racanelli about when the specialty foundry leverages SOI – and why. Advanced Substrate News (ASN): Can you tell us briefly about TowerJazz’s overall vision and position in the market?  Marco Racanelli (MR):  TowerJazz is the foundry leader for the manufacture of specialty […]

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Murata to Acquire RF-SOI Pioneer Peregrine Semi

Posted on September 1, 2014
In Industry Buzz
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Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many […]

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ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It Thumbnail

ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It

Posted by on August 21, 2014
In Design & Manufacturing, News & Viewpoints
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RF-SOI is good for more than integrating RF switches.  Other key functions typically found inside RF Front-End Modules (FEM) like power amplifiers (PA), RF Energy Management, low-noise amplifiers (LNA), and passives also benefit from integration. Last year, ST announced a monolithic approach with a new RF-SOI process called H9SOI_FEM that allows the integration of all […]

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Soitec’s Shipped Enough eSI RF-SOI Substrates to Make over 1.4 Billion Devices Thumbnail

Soitec’s Shipped Enough eSI RF-SOI Substrates to Make over 1.4 Billion Devices

Posted on July 18, 2014
In Industry Buzz
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Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.)  The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE applications. […]

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Design wins in smartphones from LG and Pantech are among the many announcements from Peregrine Semi over the last three months Thumbnail

Design wins in smartphones from LG and Pantech are among the many announcements from Peregrine Semi over the last three months

Posted on August 30, 2013
In Industry Buzz
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Design wins in smartphones from LG and Pantech are among the many announcements from Peregrine Semi over the last three months. These are thanks to the latest version of its UltraCMOS® process technology, STeP8 for RF Front End ICs. (The UltraCMOS technology is an advanced RF SOI process leveraging bonded silicon-on-sapphire (BSOS) substrates from Soitec.) […]

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More than 65% Smartphone RF Switches on SOI, Says Yole; Power Amps Next

Posted by on July 19, 2013
In Editor's Blog
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The industry research firm Yole Développement says that more than 65 percent of substrates used in fabricating switches for handsets are SOI-based. This is a high-growth part of the market, putting up double-digit increases. Like a standard SOI wafer, an RF SOI substrate has an active (“top”) layer on which CMOS transistors are built, with […]

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More than 65 percent of substrates used in fabricating switches for handsets are SOI based, according to the industry research firm Yole Développement

Posted on July 11, 2013
In Industry Buzz
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More than 65 percent of substrates used in fabricating switches for handsets are SOI based, according to the industry research firm Yole Développement. This shows the massive adoption of RF SOI for this booming electronic market experiencing double-digit growth.  Soitec, the world’s leading manufacturer of SOI wafers, says that this shows that SOI-based technologies are […]

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More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP Thumbnail

More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP

Posted by on May 22, 2013
In Editor's Blog
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At the recent DATE Conference in Grenoble (DATE is like DAC, but in Europe, alternating yearly between Grenoble and Dresden), STMicroelectronics, CEA-Leti & Mentor Graphics joined forces for a FD-SOI presentation organized by CMP and sponsored by Mentor. Here are some of the highlights (the complete presentations are all available from the CMP website). FD-SOI: […]

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ST’s FD-SOI Wins EETimes ACE Award… and Customers! Thumbnail

ST’s FD-SOI Wins EETimes ACE Award… and Customers!

Posted by on May 2, 2013
In Editor's Blog
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Two important FD-SOI wins for STMicroelectronics have just been announced: The EETimes ACE Award for Energy Technology; Customers. The Energy Technology Award was presented at a ceremony for the 2013 Annual Creativity in Electronics (ACE) Awards. It is given by EETimes and EDN, two of the most prominent trade-media sources in electronics. The ACE Awards […]

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FD-SOI ARM-based SmartPhone Chip Hitting 3GHz in Barcelona – But Wait: It’s the Low Active Standby Power (0.6V for 1GHz) That’s Really Amazing! Thumbnail

FD-SOI ARM-based SmartPhone Chip Hitting 3GHz in Barcelona – But Wait: It’s the Low Active Standby Power (0.6V for 1GHz) That’s Really Amazing!

Posted by on February 21, 2013
In Editor's Blog
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You saw the video of the STMicroelectronics demo at the recent CES in Las Vegas – the one of the ST-Ericsson 28nm FD-SOI NovaThor L8580, right? It’s billed as a 2.5GHz chip – an industry best, but the video showed it clocking at 2.8GHz. Well now the ST-E & ST folks are saying they can […]

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