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Shanghai RF-SOI and FD-SOI presentations being posted on SOI Consortium website

Posted on September 26, 2014
In Industry Buzz
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All the presentations made at the SOI Consortium‘s Shanghai workshops on RF-SOI and FD-SOI are now being posted. The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and […]

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ST Chooses WaveIntegrity from CWS for Early Noise Analysis in FD-SOI SOCs

Posted on September 26, 2014
In Industry Buzz
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STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements […]

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Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more Thumbnail

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

Posted by on September 26, 2014
In Conferences, Editor's Blog
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  For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major part of it (website link here). With more than 5000 visitors and 350 exhibitors, Semicon Europa is the greatest annual event for the European microelectronics industry. And Grenoble can fairly be considered the epicenter of […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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More FD-SOI myth-busting, courtesy semiwiki

Posted on September 11, 2014
In Industry Buzz
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In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI.  He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half […]

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Engaging Kleinman (ex-GF/Xilinx) piece on LinkedIn Advocates for 28nm FD-SOI

Posted on September 11, 2014
In Industry Buzz
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A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI.  Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), […]

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Good FD-SOI Summer Reading & Viewing Thumbnail

Good FD-SOI Summer Reading & Viewing

Posted by on September 1, 2014
In Editor's Blog
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  Over the summer, there have been a number of excellent posts on various sites related to FD-SOI, showing that interest is running ever higher. But, if you’ve been fortunate enough to have had some vacation time, you might have missed some of them, so here’s a brief listing to help you catch up. In […]

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ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Posted on August 21, 2014
In Industry Buzz
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Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate […]

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ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It Thumbnail

ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It

Posted by on August 21, 2014
In Design & Manufacturing, News & Viewpoints
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RF-SOI is good for more than integrating RF switches.  Other key functions typically found inside RF Front-End Modules (FEM) like power amplifiers (PA), RF Energy Management, low-noise amplifiers (LNA), and passives also benefit from integration. Last year, ST announced a monolithic approach with a new RF-SOI process called H9SOI_FEM that allows the integration of all […]

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FD-SOI: The Best Enabler for Mobile Growth and Innovation Thumbnail

FD-SOI: The Best Enabler for Mobile Growth and Innovation

Posted by on August 8, 2014
In Design & Manufacturing, News & Viewpoints, SOI In Action
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The following in-depth analysis, an IBS study entitled How FD-SOI will Enable Innovation and Growth in Mobile Platform Sales, concludes that the benefits of FD-SOI are overwhelming for mobile platforms through Q4/2017 based on a number of key metrics. In fact, FD-SOI has the ability to support three technology nodes, which can mean a useful […]

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