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2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
In Editor's Blog
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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New interactive webinar on FD-SOI design posted by CMC Thumbnail

New interactive webinar on FD-SOI design posted by CMC

Posted on January 12, 2015
In Industry Buzz
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A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click here to view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s […]

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SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
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Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

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Strong uptick in FD-SOI patent activity, according to KnowMade report

Posted on January 9, 2015
In Industry Buzz
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There’s been a significant uptick in patents related to fully-depleted SOI, according to a new report by KnowMade (click here to get the report brochure).  The report looks at both FD-SOI and SOI-FinFETs (both of which are fully depleted technologies).  More than 740 patent families have been published to date, of which planar FD-SOI accounts for 340 families.  Following a […]

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SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
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Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

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Samsung’s 28FDSOI – “the ideal choice” – comes with complete ecosystem

Posted on January 7, 2015
In Industry Buzz
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Samsung’s “28FDSOI comes with a complete design ecosystem (PDK, Library, IP, and DFM),” says Kelvin Low in a blog entitled, “2014, What a Year It’s Been for Samsung Foundry. (Click here to read it.) Kelvin’s Senior Director, Foundry Marketing at Samsung Semiconductor, Inc. Samsung licensed the process technology from ST in May 2014. “Customers who are looking […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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Successful RF-SOI 2014 International Symposium Held in Shanghai Thumbnail

Successful RF-SOI 2014 International Symposium Held in Shanghai

Posted by and on December 5, 2014
In Conferences
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A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications. Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem […]

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Is China Interested in FD-SOI? You bet. Thumbnail

Is China Interested in FD-SOI? You bet.

Posted by on October 28, 2014
In Conferences, Editor's Blog, In & Around Our Industry
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At the recent FD-SOI Forum in Shanghai, the IoT (Internet of Things) was the #1 topic in all the presentations. The event was sponsored by the SOI Consortium, the Shanghai Institute of Microsystem and Information Technology / Chinese Academy of Sciences (SIMIT/CAS), and VeriSilicon. By all accounts it was a great success. Speakers included experts […]

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With FD-SOI, Industry Takes Another Look at SOI (SemiEngineering)

Posted on October 27, 2014
In Industry Buzz
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In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry’s accelerating interest in SOI, including FD-SOI and FinFETs on SOI. He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to […]

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