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More FD-SOI myth-busting, courtesy semiwiki

Posted on September 11, 2014
In Industry Buzz
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In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI.  He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half […]

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Engaging Kleinman (ex-GF/Xilinx) piece on LinkedIn Advocates for 28nm FD-SOI

Posted on September 11, 2014
In Industry Buzz
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A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI.  Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), […]

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Good FD-SOI Summer Reading & Viewing Thumbnail

Good FD-SOI Summer Reading & Viewing

Posted by on September 1, 2014
In Editor's Blog
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  Over the summer, there have been a number of excellent posts on various sites related to FD-SOI, showing that interest is running ever higher. But, if you’ve been fortunate enough to have had some vacation time, you might have missed some of them, so here’s a brief listing to help you catch up. In […]

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ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Posted on August 21, 2014
In Industry Buzz
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Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate […]

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ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It Thumbnail

ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It

Posted by on August 21, 2014
In Design & Manufacturing, News & Viewpoints
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RF-SOI is good for more than integrating RF switches.  Other key functions typically found inside RF Front-End Modules (FEM) like power amplifiers (PA), RF Energy Management, low-noise amplifiers (LNA), and passives also benefit from integration. Last year, ST announced a monolithic approach with a new RF-SOI process called H9SOI_FEM that allows the integration of all […]

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FD-SOI: The Best Enabler for Mobile Growth and Innovation Thumbnail

FD-SOI: The Best Enabler for Mobile Growth and Innovation

Posted by on August 8, 2014
In Design & Manufacturing, News & Viewpoints, SOI In Action
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The following in-depth analysis, an IBS study entitled How FD-SOI will Enable Innovation and Growth in Mobile Platform Sales, concludes that the benefits of FD-SOI are overwhelming for mobile platforms through Q4/2017 based on a number of key metrics. In fact, FD-SOI has the ability to support three technology nodes, which can mean a useful […]

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The SOI Papers at VLSI ’14 (Part 2): Thumbnail

The SOI Papers at VLSI ’14 (Part 2):

Posted by on July 17, 2014
In Conferences, Editor's Blog, Paperlinks, R&D/Labnews
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Last week we posted Part 1 of our round-up of SOI papers at the VLSI Symposia – which included the paper showing that 14nm FD-SOI should match the performance of 14nm bulk FinFETs. (If you missed Part 1, covering the three big 14nm FD-SOI and 10nm FinFET papers, click here to read it now.) This […]

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Helpful FD-SOI Info Pages on ST Website

Posted on July 15, 2014
In Industry Buzz
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ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore’s Law,  and finishes with info on power efficiency, memories, analog and high-speed designs.

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Leti’s Monolithic 3D Highlighted in IEEE Spectrum

Posted on July 15, 2014
In Industry Buzz
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An excellent article highlighting Leti’s work on monolithic 3D was recently published in the IEEE’s Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they’ve worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to […]

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The SOI Papers at VLSI ’14 (Part 1): Breakthroughs in 14nm FD-SOI, 10nm SOI-FinFETs Thumbnail

The SOI Papers at VLSI ’14 (Part 1): Breakthroughs in 14nm FD-SOI, 10nm SOI-FinFETs

Posted by on July 11, 2014
In Conferences, Editor's Blog, Paperlinks, R&D/Labnews
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The VLSI Symposia – one on technology and one on circuits – are among the most influential in the semiconductor industry. Three hugely important papers were presented – one on 14nm FD-SOI and two on 10nm SOI FinFETs – at the most recent symposia in Honolulu (9-13 June 2014). In fact, three out of four […]

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