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Go! FD-SOI Wafer Suppliers Ready for High-Volume Ramp; Atomic-Scale Uniformity Assured Thumbnail

Go! FD-SOI Wafer Suppliers Ready for High-Volume Ramp; Atomic-Scale Uniformity Assured

Posted by on July 21, 2015
In Design & Manufacturing, Editor's Blog
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With the great news about FD-SOI foundry offerings from Samsung, ST and now GlobalFoundries, plus the IP availability, the wafer suppliers have chimed in to remind the ecosystem they’re ready to ramp (and have been for a number of years!). So the wafers are ready (and they truly are amazing), the processes ensuring high yield […]

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It’s Official! GlobalFoundries Launches 22FDX: 22nm FD-SOI in 4 flavors Thumbnail

It’s Official! GlobalFoundries Launches 22FDX: 22nm FD-SOI in 4 flavors

Posted by on July 14, 2015
In Design & Manufacturing, Editor's Blog
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With much fanfare, GlobalFoundries has officially announced its 22nm FD-SOI offering. Dubbed “22FDX™”, GF says the platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar, targeting mainstream mobile, IoT, RF connectivity and networking markets. Asked by EETimes why FD-SOI here and now, GF’s CEO Sanjay Jha responded, “The mass market is […]

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Yes! FD-SOI IP Ready for GF, Samsung; Ecosystem Now a Force to Be Reckoned With Thumbnail

Yes! FD-SOI IP Ready for GF, Samsung; Ecosystem Now a Force to Be Reckoned With

Posted by on July 6, 2015
In Conferences, Design & Manufacturing, Editor's Blog
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The recent LetiDays FD-SOI workshop in Grenoble was the biggest show of force to date for the burgeoning FD-SOI ecosystem. In addition to a raft of excellent presentations, we learned two very big pieces of news. First, GlobalFoundries provided more insights into their upcoming FD-SOI offering. And second, designers opting for Samsung’s 28nm FD-SOI offering […]

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ST 28nm FD-SOI SOC Design Throughput 10X faster with Synopsys Compiler II

Posted on July 6, 2015
In Industry Buzz
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Synopsys recently announce that its IC Compiler II place and route solution was used by STMicroelectronics to tape out a complex 28-nm-FD-SOI SoC. (Read the press release here.) Fast throughput and analysis delivered a 10X reduction in time-to-good-floorplan. A 5X faster implementation with 2X smaller memory footprint enabled breakthrough productivity while exceeding quality of results […]

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GF, NXP, Infineon and more at SOI Workshop During Silicon Saxony Day (Dresden, 7 July 2015) Thumbnail

GF, NXP, Infineon and more at SOI Workshop During Silicon Saxony Day (Dresden, 7 July 2015)

Posted on June 12, 2015
In Industry Buzz
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Silicon Europe (an alliance of Europe’s leading micro- and nanoelectronics clusters) and the SOI Consortium have organized an SOI Workshop on the 7th of July 2015, during the 10th Silicon Saxony Day in Dresden. Here’s the agenda: Quick Introduction More than Moore Market Analysis and Opportunities (Yole) Power SOI and applications (NXP) Foundry offer (GlobalFoundries) […]

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Synapse Design CEO Interview: Designs Taping Out for Very High-Volume 28nm FD-SOI SOCs, Production in 2016 Thumbnail

Synapse Design CEO Interview: Designs Taping Out for Very High-Volume 28nm FD-SOI SOCs, Production in 2016

Posted by on April 30, 2015
In Design & Manufacturing, SOI In Action
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ASN spoke recently with Satish Bagalkotkar, the CEO of Synapse Design, which he co-founded with Devesh Gautam in 2003. With 800+ employees, the firm designs chips for the biggest companies in the industry. He’s very optimistic about FD-SOI. Here’s why. Advanced Substrate News (ASN): How long has Synapse Design been working in FD-SOI? What sorts […]

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Shanghai More-Than-Moore Presentations Now Posted on SOI Consortium Website

Posted on April 30, 2015
In Industry Buzz
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Presentations given at the ‘Beyond Computing’ Innovative Technologies Symposium (March 2015 in Shanghai) are now available on the SOI Consortium website (click here to see the list). The Symposium covered MEMS, semiconductor manufacturing, RF and power, which are key topics for the fast growing “More than Moore” industry. The one-day, closed-door symposium was organized by […]

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IEEE SOI-3D-Subthreshold Conference (S3S, Oct. Sonoma, CA) Welcoming Papers til mid-May Thumbnail

IEEE SOI-3D-Subthreshold Conference (S3S, Oct. Sonoma, CA) Welcoming Papers til mid-May

Posted by on April 27, 2015
In Conferences
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The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) is welcoming papers until May 18, 2015. Last year, the second edition of the IEEE S3S conference, founded upon the co-location of the IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference was a great success targetting key topics and attracting even more participants than […]

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28nm FD-SOI cryptocurrency ASIC first to debut in silicon, surpasses expectations with 0.45V operation Thumbnail

28nm FD-SOI cryptocurrency ASIC first to debut in silicon, surpasses expectations with 0.45V operation

Posted on April 21, 2015
In Industry Buzz
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Right on schedule, the SFARDS cryptocurrency ASIC on 28nm FD-SOI has made its debut in silicon, and is surpassing expectations. In what is clearly a stunning success, the company announced that the ASIC’s lowest working voltage is 0.45V. This means it operates stably at a power supply voltage that’s about half that of competing 28nm […]

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Newest Leti Compact Model for FD-SOI Further Improves Predictability and Accuracy Thumbnail

Newest Leti Compact Model for FD-SOI Further Improves Predictability and Accuracy

Posted on April 21, 2015
In Industry Buzz
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CEA-Leti’s newest version of its advanced compact model for FD-SOI is now available in all major SPICE simulators (get the press release here). The Leti-UTSOI2.1 is the latest version of Leti’s compact model for FD-SOI, which was first released in 2013. (Compact models of transistors and other elementary devices are used to predict the behavior […]

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