FD-SOI ARM-based SmartPhone Chip Hitting 3GHz in Barcelona – But Wait: It’s the Low Active Standby Power (0.6V for 1GHz) That’s Really Amazing!
Posted by Adele HARS on February 21, 2013In Editor's Blog
Tagged with 28nm, apps, ARM, design, embedded, FD-SOI, FinFET, foundry, Fully Depleted, low-power, manufacturing, mobile, silicon-on-insulator, SOC, ST, ST-Ericsson, wireless
You saw the video of the STMicroelectronics demo at the recent CES in Las Vegas – the one of the ST-Ericsson 28nm FD-SOI NovaThor L8580, right? It’s billed as a 2.5GHz chip – an industry best, but the video showed it clocking at 2.8GHz. Well now the ST-E & ST folks are saying they can …
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