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The IEEE S3S Conference Delivered Impressive Technical Content Thumbnail

The IEEE S3S Conference Delivered Impressive Technical Content

Posted by on November 18, 2013
In Conferences
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The new IEEE S3S conference promised rich content, as it merged both The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. The result was an excellent conference, with outstanding presentations from key players in each of the three topics covered. This quality was reflected in the increased attendance: almost 50% more […]

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Leti: Adding Strain to FD-SOI for 20nm and Beyond Thumbnail

Leti: Adding Strain to FD-SOI for 20nm and Beyond

Posted by and (CEA-Leti) on April 30, 2012
In Advanced Substrate Corners, ASN #19, R&D/Labnews
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Work at Leti shows that strain is an effective booster for high-performance at future nodes. The outstanding electrostatic performance already reported for planar FD-SOI technology can be improved by the use of ION boosters in order to target-high performance applications, as already demonstrated in the past. As illustrated in Figure 1, strain can be incorporated […]

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