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RF-SOI Powerhouse Peregrine Introduces UltraCMOS® Global 1 Reconfigurable RF Front-End System Thumbnail

RF-SOI Powerhouse Peregrine Introduces UltraCMOS® Global 1 Reconfigurable RF Front-End System

Posted on February 7, 2014
In Industry Buzz
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Peregrine’s UltraCMOS® Global 1, the first reconfigurable RFFE system, includes a multimode, multiband power amplifier, post-PA switch, antenna switch and antenna tuner on a single chip. (Image courtesy: Peregrine Semiconductor) RF-SOI powerhouse Peregrine Semiconductor has announced the Global 1 (press release here), billed as “the industry’s first reconfigurable RF front-end system”.  The company says it […]

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FD-SOI Opportunities in China Thumbnail

FD-SOI Opportunities in China

Posted by on February 5, 2014
In Design & Manufacturing, News & Viewpoints, Professor's Perspective
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Authors: Zhongli Liu, Kai Zhao, Jiajun Luo, Fang Yu, Tianchun Ye (IMECAS) The Chinese IC industry is facing a real opportunity, and Chinese IC developers are looking for points of entry to best leverage this important moment. The CTO of a large Chinese IC supplier is looking for system solutions for their SOC chips, in […]

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Soitec White Paper Explains Value of New RF-SOI Wafers for 4G/LTE Applications Thumbnail

Soitec White Paper Explains Value of New RF-SOI Wafers for 4G/LTE Applications

Posted on December 19, 2013
In Industry Buzz
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Soitec has issued a highly-informative new white paper on its enhanced signal integrity – aka eSI™ – wafers for 4G and LTE/A applications (to get the paper, click here).  Entitled “Innovative RF-SOI Wafers for Wireless Applications”, the paper explains the various challenges faced by RF IC designers, and how the new eSI wafers offer powerful […]

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IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers Thumbnail

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

Posted by on December 19, 2013
In Conferences, Editor's Blog, Paperlinks
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SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM ’13.  Last week we covered the FD-SOI papers (click here if you missed that piece). In this post, we’ll cover the other major SOI et al papers – including those on FinFETs, RF and various advanced devices. Brief summaries, culled […]

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Soitec, IntelliEPI Sign Agreement on GaAs Wafers, Supply Chain

Posted on December 16, 2013
In Industry Buzz
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Advanced substrate leader Soitec and Intelligent Epitaxy Technology, Inc. (IntelliEPI, Taiwan) a leader in InP, GaAs, and GaSb epi wafers, have signed a collaborative agreement to better serve the GaAs market (press release here). “We are delighted to announce the license of our technology leading to a second source for our products for our key […]

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Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries Thumbnail

Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries

Posted by and on December 5, 2013
In Design & Manufacturing, In & Around Our Industry
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Soitec has reached high-volume manufacturing of our new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. They are the first ‘trap-rich’ type of material in full production, and are already used in manufacturing by most of the leading RF foundries in front-end modules for 4G and LTE mobile computing and communication applications. […]

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SOI Pioneers Mazure and Raskin Join Ranks of IEEE Fellows

Posted on December 5, 2013
In Industry Buzz
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Two SOI pioneers have been elevated to the status of Fellow by the IEEE for their extraordinary accomplishents: Jean-Pierre Raskin (Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium) – joined the “Class of 2014” for “contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices”.  Dr. Raskin received his PhD degree from UCL, where he […]

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SOITEC and UCL boost the RF performance of SOI substrates Thumbnail

SOITEC and UCL boost the RF performance of SOI substrates

Posted by and (Soitec) on December 4, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, Professor's Perspective, R&D/Labnews
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Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]

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Boost for SOI Wafer Supply Chain: Soitec, SunEdison End Legal Feud, Agree on Patent Cross-Licencing

Posted on November 27, 2013
In Industry Buzz
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Good news for the SOI ecosystem: SOI wafer suppliers Soitec and SunEdison (formerly MEMC) have ended their longstanding legal feud and entered into a patent cross-license agreement (press release here).  The agreement provides each company with access to the other’s patent portfolio for SOI technologies and ends all their outstanding legal disputes. For Soitec, it […]

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New FD-SOI Presentation by ST on Design & Reuse Looks at Cost, IP Thumbnail

New FD-SOI Presentation by ST on Design & Reuse Looks at Cost, IP

Posted on November 18, 2013
In Industry Buzz
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Design & Reuse has posted an excellent presentation by Giorgio Cesana of ST entitled FD-SOI Technology for Energy Efficient SoCs: IP Development Examples (click here). It explains why the technology is faster-cooler-simpler – and more cost effective. After a quick tour of the tech basics, Cesana gets into cost/performance ratios, comparing the technology to bulk […]

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