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SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
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Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

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SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
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Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

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Soitec and SK Innovation collaborate on advanced semiconductor materials for IoT and communications

Posted on January 7, 2015
In Industry Buzz
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SOI wafer and advanced substrate leader Soitec and Korea’s SK Innovation (SKI) recently signed a Collaboration Agreement (CA) to establish a strategic alliance (read the press release here). The focus is on accelerating innovation in the area of semiconductor materials for information communication technologies and internet-of-things applications. The collaborative partnership will build on the synergy […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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Successful RF-SOI 2014 International Symposium Held in Shanghai Thumbnail

Successful RF-SOI 2014 International Symposium Held in Shanghai

Posted by and on December 5, 2014
In Conferences
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A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications. Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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imec 28 Gb/s photonics platform in upcoming multiproject SOI wafer runs

Posted on August 21, 2014
In Industry Buzz
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imec’s 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS.  They provide […]

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ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Posted on August 21, 2014
In Industry Buzz
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Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate […]

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The SOI Papers at VLSI ’14 (Part 2): Thumbnail

The SOI Papers at VLSI ’14 (Part 2):

Posted by on July 17, 2014
In Conferences, Editor's Blog, Paperlinks, R&D/Labnews
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Last week we posted Part 1 of our round-up of SOI papers at the VLSI Symposia – which included the paper showing that 14nm FD-SOI should match the performance of 14nm bulk FinFETs. (If you missed Part 1, covering the three big 14nm FD-SOI and 10nm FinFET papers, click here to read it now.) This […]

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Leti’s Monolithic 3D Highlighted in IEEE Spectrum

Posted on July 15, 2014
In Industry Buzz
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An excellent article highlighting Leti’s work on monolithic 3D was recently published in the IEEE’s Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they’ve worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to […]

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