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The Ever-Expanding 28nm FD-SOI Ecosystem (Samsung Interview, Part 3 of 3) Thumbnail

The Ever-Expanding 28nm FD-SOI Ecosystem (Samsung Interview, Part 3 of 3)

Posted by on December 23, 2015
In Design & Manufacturing, News & Viewpoints, SOI In Action
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For this 3-part series, ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 3, we’ll talk about the ecosystem. (In part 1 we talked about technology readiness, and in part 2, we talked […]

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Mentor tools being qualified for GlobalFoundries’ 22nm FD-SOI process

Posted on December 23, 2015
In Industry Buzz
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Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor’s RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are working […]

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When to Choose 28nm FD-SOI and Why (Samsung Interview Part 2 of 3) Thumbnail

When to Choose 28nm FD-SOI and Why (Samsung Interview Part 2 of 3)

Posted by on December 22, 2015
In Design & Manufacturing, News & Viewpoints, SOI In Action
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For this 3-part series, ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 2, we’ll talk about design. (In part 1, we talked about Samsung’s technology readiness. In part 3, we’ll talk about […]

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Yes, 28nm FD-SOI Silicon Is Running (Samsung Interview, Part 1 of 3) Thumbnail

Yes, 28nm FD-SOI Silicon Is Running (Samsung Interview, Part 1 of 3)

Posted by on December 19, 2015
In Design & Manufacturing, News & Viewpoints, SOI In Action
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ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 1, we’ll talk about technology readiness. In parts 2 and 3, we’ll talk about design and the ecosystem. ~ ~ ~ ASN: Where does […]

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Interview (part 2 of 2): Leti Is a Catalyst for the FD-SOI Ecosystem. CEO Marie Semeria Explains Where They’re Headed Thumbnail

Interview (part 2 of 2): Leti Is a Catalyst for the FD-SOI Ecosystem. CEO Marie Semeria Explains Where They’re Headed

Posted by on December 17, 2015
In Design & Manufacturing, News & Viewpoints, R&D/Labnews
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From wafers to apps, Leti has been the moving force behind all things SOI for over 30 years. Now they’re the powerhouse behind the FD-SOI phenomenon. CEO Marie-Noelle Semeria shares her insights here in part 2 of this exclusive ASN interview as to what Leti’s doing to drive the ecosystem forward. (In part 1, she […]

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TowerJazz Cites Strong RF-SOI Growth as Driving force in TX Fab Acquisition Thumbnail

TowerJazz Cites Strong RF-SOI Growth as Driving force in TX Fab Acquisition

Posted on December 8, 2015
In Industry Buzz
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With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in demand from its customers. (See press release here.) The proposed purchase will expand TowerJazz’s current worldwide manufacturing capacity, cost-effectively increasing production by […]

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Leti Develops 22nm FD-SOI Local-strain Techniques to boost performance and lower power consumption

Posted on December 8, 2015
In Industry Buzz
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CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si […]

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Toshiba announces new RF-SOI process and smartphone switch with industry-best insertion loss

Posted on November 30, 2015
In Industry Buzz
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Toshiba has announced TaRF8, the next generation in the company’s TarfSOI™ (aka Toshiba advanced RF SOI) process, which is optimized for RF switch apps. The first product to use the technology is Toshiba’s new SP12T, enabling the lowest-class of insertion loss in the industry. Lowering insertion loss is recognized as particularly important in decreasing RF […]

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RF-SOI Roars Back into the Headlines Thumbnail

RF-SOI Roars Back into the Headlines

Posted by on November 27, 2015
In Design & Manufacturing, Editor's Blog
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Articles about chips built on RF-SOI technology are back in the headlines. What’s driving it? Data – lots of it, and at ever higher speeds, finding its way in and out of your mobile device. Bear in mind that we’re talking now about RF-SOI, which is not the same thing as RF in FD-SOI. These […]

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Cadence tools enabled for GF 22FDX FD-SOI. Validated on ARM Cortex-A17. Reference flow available.

Posted on November 27, 2015
In Industry Buzz
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Cadence has announced that its digital and signoff tools are now enabled for the current version of the GLOBALFOUNDRIES® 22FDX™ platform reference flow (see press release here). GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of software-controlled body bias to manage power, performance and leakage needed […]

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