DARPA reports that a team of researchers at the University of Southern California and Columbia University has achieved output power levels of nearly 0.5W at 45 GHz with a 45nm SOI CMOS chip
Posted on April 12, 2013In Industry Buzz
Tagged with 45nm, Columbia U, DARPA, mil/aero, power, R&D, rf, silicon-on-insulator, SOI, USC
DARPA reports that a team of researchers at the University of Southern California and Columbia University has achieved output power levels of nearly 0.5W at 45 GHz with a 45nm SOI CMOS chip. This world record result for CMOS-based power amplifiers doubles output power compared to the next best reported CMOS millimeter-wave power amplifier. The …
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