IBM will produce Micron‘s Hybrid Memory Cube (HMC) in the debut of the first commercial, 3D chip-making. HMC parts will be manufactured at IBM’s advanced semiconductor fab in East Fishkill, N.Y., using the company’s 32nm SOI HKMG process technology.

The latest white paper from SOI Consortium members is loaded with technical information. The full paper is available on the website. Here are some of the highlights. In approaching a bulk-to-FD-SOI port, different perspectives can be taken: IP Porting: The focus may be to easily port the libraries and other IP available in Bulk to …

Leveraging its Power Architecture, IBM will produce the CPUs for Nintendo‘s hot new Wii U on 45nm SOI.  IBM’s unique embedded DRAM on SOI (see ASN6) triples the amount of memory on a single chip, feeding the multi-core processor large chunks of data for a smooth and extreme entertainment experience. The Wii U hits store …

Honeywell Aerospace has introduced the HXSR06432, a high-performance SRAM on 150nm SOI. It is designed for use in low voltage systems operating in radiation sensitive environments.

IBM is including LogicVision’s ETMemory™ memory built-in self test (BIST) and on-chip self-repair solution for embedded memory test and yield improvement within its advanced 45nm SOI foundry flow. The ETMemory solution will be recommended by IBM to its 45nm SOI customers to help them in their own design work.

In what may represent a major DRAM bitcell change, Hynix has agreed to license ISi’s single transistor bitcell Z-RAM™ for use in its DRAM chips.

SOI-based memory reverses cache crunch and simplifies DRAM scaling, boosting performance and reducing cost. Memory today represents about 25% of the estimated $260B worldwide semiconductor market. The two dominant players are DRAM (56%) and FLASH (33%). Further, memory in the form of embedded SRAM cache is becoming the dominant area user and technology driver for …

• ISi says its new Z-RAM Gen2 high-density, SOI-based memory IP, which is twice as fast as the previous generation and massively lowers memory read/write power, has been licensed to AMD.

Toshiba has successfully developed a high-performance, high-density, low-cost 128Mb FBRAM. FBRAM is Random Access Memory (RAM) with a Floating Body Cell (FBC). It is a capacitor-less DRAM cell consisting of a MOSFET on an SOI wafer. Data “1” and Data “0” are distinguished by the hole density in the floating body of the MOSFET.

Embedded DRAM on SOI is set to proliferate at the 45nm node. Embedded memory now occupies close to 75% of the total chip area. Until a few years ago, this memory was exclusively SRAM, but more recently the industry has seen a significant transition to embedded DRAMs (eDRAMs).