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More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP Thumbnail

More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP

Posted by on May 22, 2013
In Editor's Blog
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At the recent DATE Conference in Grenoble (DATE is like DAC, but in Europe, alternating yearly between Grenoble and Dresden), STMicroelectronics, CEA-Leti & Mentor Graphics joined forces for a FD-SOI presentation organized by CMP and sponsored by Mentor. Here are some of the highlights (the complete presentations are all available from the CMP website). FD-SOI: …

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ST’s FD-SOI Wins EETimes ACE Award… and Customers! Thumbnail

ST’s FD-SOI Wins EETimes ACE Award… and Customers!

Posted by on May 2, 2013
In Editor's Blog
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Two important FD-SOI wins for STMicroelectronics have just been announced: The EETimes ACE Award for Energy Technology; Customers. The Energy Technology Award was presented at a ceremony for the 2013 Annual Creativity in Electronics (ACE) Awards. It is given by EETimes and EDN, two of the most prominent trade-media sources in electronics. The ACE Awards …

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IBM: FinFET Isolation Considerations and Ramifications – Bulk vs. SOI Thumbnail

IBM: FinFET Isolation Considerations and Ramifications – Bulk vs. SOI

Posted by (IBM) on April 18, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, R&D/Labnews
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Fully-depleted transistor technologies, both planar and fin-type, are now in the mainstream for product designs. One of the many interesting topics in the new 3D FinFET technology is the approach to isolation. In this article, key elements that differentiate junction-isolated (bulk) and dielectric-isolated (SOI) FinFET transistors are discussed, encompassing aspects of process integration, device design, …

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GF’s Two Flavors of FD-SOI – Kengeri Explains (Exclusive ASN Q&A) Thumbnail

GF’s Two Flavors of FD-SOI – Kengeri Explains (Exclusive ASN Q&A)

Posted on April 15, 2013
In Design & Manufacturing, In & Around Our Industry
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Hearing the news that GlobalFoundries would be offering two flavors of FD-SOI, ASN asked the company to explain the strategy further. Here are the responses provided by Subi Kengeri, Vice President of Advanced Technology Architecture. What do you see as the FD-SOI benefits for chip designers? Lower SRAM Vmin for retention and lower operating Vmin …

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FD-SOI ARM-based SmartPhone Chip Hitting 3GHz in Barcelona – But Wait: It’s the Low Active Standby Power (0.6V for 1GHz) That’s Really Amazing! Thumbnail

FD-SOI ARM-based SmartPhone Chip Hitting 3GHz in Barcelona – But Wait: It’s the Low Active Standby Power (0.6V for 1GHz) That’s Really Amazing!

Posted by on February 21, 2013
In Editor's Blog
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You saw the video of the STMicroelectronics demo at the recent CES in Las Vegas – the one of the ST-Ericsson 28nm FD-SOI NovaThor L8580, right? It’s billed as a 2.5GHz chip – an industry best, but the video showed it clocking at 2.8GHz. Well now the ST-E & ST folks are saying they can …

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ST’s Cesana Further Explains FD-SOI Biasing & More in On-line Discussions and LinkedIn Groups Thumbnail

ST’s Cesana Further Explains FD-SOI Biasing & More in On-line Discussions and LinkedIn Groups

Posted by on February 4, 2013
In Editor's Blog
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The YouTube video Introduction to FD-SOI by STMicroelectronics and ST-Ericsson has generated enormous coverage in the press as well as in-depth discussions across various user groups in LinkedIn.  In its first two weeks, it had over 3000 YouTube views, and LinkedIn postings of it generated over 50 Likes and Comments in a single group. As …

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Design Highlights: ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip Thumbnail

Design Highlights: ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip

Posted by on January 21, 2013
In Editor's Blog
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Just Posted: FD-SOI video & white paper. Just as this blog was going online, ST-Ericsson posted an excellent, in-depth white paper; and in partnership with STMicroelectroics, a YouTube video detailing the how’s and why’s of FD-SOI.Here are the links — you really don’t want to miss these: • Multiprocessing in Mobile Platforms: the Marketing and …

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ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip at Vegas – a Great Start to 2013 Thumbnail

ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip at Vegas – a Great Start to 2013

Posted by on January 14, 2013
In Editor's Blog
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What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, for designers, for foundries, and for …

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STMicroeletronics announced its 28nm FD-SOI Technology is ready for manufacturing in its leading-edge Crolles fab Thumbnail

STMicroeletronics announced its 28nm FD-SOI Technology is ready for manufacturing in its leading-edge Crolles fab

Posted on December 12, 2012
In Industry Buzz
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STMicroeletronics announced its 28nm FD-SOI Technology is ready for manufacturing in its leading-edge Crolles fab.  At the SOI Consortium FD Symposium,  ST presented silicon-verified process technology that delivers 30% higher speed and up to 50% improvement in power.  ST’s FD-SOI Technology Platform encompasses the availability of a feature-complete and silicon-verified Design Platform, including the full …

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The Transition to Fully Depleted Thumbnail

The Transition to Fully Depleted

Posted by (SOI Industry Consortium) on December 12, 2012
In ASN #20, Special supplement: SOI Industry Consortium
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The SOI Industry Consortium is actively engaged in supporting the industry’s transition to fully-depleted (FD) technologies. FD technologies offer: better electrostatics, so you’ve got stronger gate control; and lower channel doping, which enables better SRAMs that can operate stably at lower supply voltages – resulting in power savings of up to 40%. There are two …

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