ASN

Archive of lighting

Thinking Thin: NXP’s EZ-HV-SOI Thumbnail

Thinking Thin: NXP’s EZ-HV-SOI

Posted on December 13, 2010
In ASN #16, End-User Apps, SOI In Action
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First announced a decade ago, NXP’s EZ-HV™ is process technology for the production of commercial high-voltage (HV) SOI-enabled ICs.  It is at the heart of NXP’s GreenChip technology, and is ideal for implementing optimal solutions for a wide range of lighting applications. In high-power systems, it allows sophisticated control logic and high voltage drive circuits …

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Newest Drivers Reach New Levels of Integration Thumbnail

Newest Drivers Reach New Levels of Integration

Posted on December 13, 2010
In ASN #16, End-User Apps, SOI In Action
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Newest Drivers Reach New Levels of Integration NXP’s UBA2211 for the 230V and 110V markets is the latest driver IC family in the company’s CFL IC portfolio. Built on NXP’s EZ-HV SOI technology, it features the highest level of integration available on the market today, including a current controlled preheat function, enabling more compact designs, …

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Celebrating Over A Decade of Green

Posted on July 30, 2009
In ASN #13, End-User Apps, SOI In Action
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Piet Wessels has been the driving force behind NXP’s (and formerly Philips’) SOI-enabled high-voltage business ever since it first began. Advanced Substrate News: 10 years ago this spring, NXP (then Philips), announced its EZ-HV SOI technology for applications in the 60 to 650V range. What sorts of products has it been used for? How effective …

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High-Growth GaN Applications Could Get a Boost Thumbnail

High-Growth GaN Applications Could Get a Boost

Posted by (Yole Développement) on July 11, 2005
In Advanced Substrate Corners, ASN #2, III-V
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Replacing epitaxy with bonding could pave the way for 4” substrates. Gallium nitride (GaN) based blue-white HB-LEDs (High-Brightness LEDs) are now at full production level, posting a CAGR of over 51% and targeting markets in automotives, IT, and general lighting.

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WORLD’S FIRST GaN-ON-INSULATOR

Posted on April 18, 2005
In ASN #1, Design & Manufacturing, In & Around Our Industry
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Here’s a quick review of some recent Smart Cut activity. March 2005 – WORLD’S FIRST GALLIUM NITRIDE (GaN)-ON- INSULATOR SUBSTRATE Soitec announced that its Smart Cut technology was used to split and transfer a thin layer of GaN from a high-quality GaN donor wafer onto a carrier wafer— generating the world’s first single- crystal, thin-film …

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