Dr. Wolfgang Mueller to lead Z-RAM efforts.

Craig Factor named VP legal affairs and general counsel. Z-RAM® developer Innovative Silicon, Inc. (ISi) has named Dr. Victor Koldyaev as the company’s first Innovative Silicon Fellow. Dr. Koldyaev joined ISi in August 2007 as director of device, material science and front end-of-the-line (FEOL) integration, where he is responsible for over-seeing process architecture development for …

Two more prestigious awards for Innovative Silicon Inc. (ISi) and its SOI-based Z-RAM® memory IP: a Technology Pioneer 2008 from the World Economic Forum and Audemars Piguet’s “Changing Times ‘Next Gem’ Award”.

• ISi says its new Z-RAM Gen2 high-density, SOI-based memory IP, which is twice as fast as the previous generation and massively lowers memory read/write power, has been licensed to AMD.

ISi and its Z-RAM® memory technology are gaining accolades across the industry. Innovative Silicon (ISi), the developer of Z-RAM® ultra-dense memory intellectual property (IP), is on an awards roll. The company recently announced that IEEE Spectrum Magazine readers named Z-RAM the number one winning technology in its “Winners and Losers” edition. Over 50 percent of …

The co-inventor of Z-RAM explains the technology. As a Z-RAM – zero capacitor RAM – memory technology bit cell uses only a transistor plus the floating body effect inherent in SOI processing (see Figure 1), it typically measures only 15-20F² (where F is the technology minimum feature size).

• Innovative Silicon Inc. (ISi), the developer of Z-RAM® high density memory IP, announced that it has recruited semiconductor memory and SOI luminaries Dr. Jean-Pierre Colinge, Dr. Michel J. Declercq, Dr. Richard C. Foss, Dr. Carlos Mazure, and Mark McDermott to participate in the company’s newly formed Technology Advisory Board.

The widening availability of tools and services is good news for designers in the fabless/foundry arena considering the move to SOI. Leading foundries have made the investments in manufacturing on SOI. Those that have taken the final steps – finalizing electrical characterization, constructing SPICE models, integrating design tools and building libraries – are winning business. …

ISi’s memory technology helps designers achieve speed increases and power savings at no extra cost. It is well-accepted that SOI processing offers significant benefits in terms of speed and low power. Moreover, as the industry moves to the 65 and 45nm nodes, many analysts predict that bulk CMOS – so long the technology of choice …

Z-RAM + SOI can save > 40%. There is no doubt today that the industry, led by the microprocessor segment, is moving to take advantage of the lower power consumption and higher performance of SOI compared to bulk wafers.