Editor's blog
More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP
May 22, 2013 - At the recent DATE Conference in Grenoble (DATE is like DAC, but in Europe, alternating yearly between Grenoble and Dresden), STMicroelectronics, CEA-Leti & Mentor Gr...
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Industry Buzz
- MOSIS, a provider of low-cost prototyping and small volume production services for custom ICs, has teamed up with ePIXfab, the European Silicon Photonics support center providing low-cost prototyping services for photonic ICs. - MOSIS, a provider of low-cost prototyping and small volume production services for custom ICs, has teamed up with ePIXfab, the European Silicon Photonics... More →
- Dr. Jean-Pierre Colinge received the 2012 IEEE Andrew S. Grove award at the last ESSDERC-ESSCIRC Conference, for his “contributions to silicon-on-insulator devices and technology.” - IEEE Division I Director, Cor Claeys (right) of imec, honoring Dr. Jean-Pierre Colinge (left) of TSMC for receiving - the 2012 Andrew S. Grove Award for his... More →
- The FD-SOI design and manufacturing ecosystem has just gotten a €360M boost. - The FD-SOI design and manufacturing ecosystem has just gotten a €360M boost. A new 3-year public-private project involving 500 engineers from 19 members in... More →
- SiTime has entered the smartphone/tablet/mobile app market with the first MEMS oscillator in a chip scale package (CSP) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has entered the smartphone/tablet/mobile app market with the first MEMS oscillator in a... More →
- An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting - An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential... More →
- Soitec's Smart Cut™ technology is now being leveraged to produce GaN substrates for high-performance LED lighting applications - Soitec's Smart Cut™ technology, best known for its role as the leading technology for producing SOI wafers, is now being leveraged to produce GaN substrates... More →
- FD-SOI Forum 2013 in Hsinchu, Taiwan - Presentations available online! - On April 22, 2013, leading companies from the SOI Industry Consortium organized a forum focused on fully depleted technologies for highly energy-efficient... More →
- DARPA reports that a team of researchers at the University of Southern California and Columbia University has achieved output power levels of nearly 0.5W at 45 GHz with a 45nm SOI CMOS chip - (Image courtesy of DARPA and Columbia University) - DARPA reports that a team of researchers at the University of Southern California and Columbia University... More →
- Altis Semiconductor will be a foundry partner for the IBM 180nm SOI technology - Specialty foundry Altis Semiconductor will be a foundry partner for the IBM 180nm SOI technology. ALTIS will deliver high volume products starting Q2 2013 and... More →
- Peregrine has announced the latest version of UltraCMOS® process technology-Semiconductor Technology Platform 8 (STeP8) - Peregrine has announced the latest version of UltraCMOS® process technology—Semiconductor Technology Platform 8 (STeP8), which the company says enables... More →
- TowerJazz says its latest RF SOI technology offers the industry’s best figure of merit for antenna switch and antenna tuning applications - Specialty foundry TowerJazz says its latest RF SOI technology offers the industry’s best figure of merit for antenna switch and antenna tuning applications... More →
- RDA Microelectronics has begun volume shipments of its RDALN16 GPS LNA - RDA Microelectronics has begun volume shipments of its RDALN16 GPS LNA for use in Samsung's 3G handsets deployed in Europe and emerging markets worldwide, such... More →
- Skyworks announced that its industry-leading Silicon-on-insulator (SOI) switching technology is now being used by European, Japanese, Korean and North American car manufacturers - Skyworks announced that its industry-leading Silicon-on-insulator (SOI) switching technology is now being used by European, Japanese, Korean and North American... More →
- GSS has declared, “Metal-gate-first FD-SOI will be very good but metal-gate-last could be spectacular - Following investigations and simulations, GSS has declared, “Metal-gate-first FD-SOI will be very good but metal-gate-last could be spectacular.” “...the... More →
- STMicroeletronics announced its 28nm FD-SOI Technology is ready for manufacturing in its leading-edge Crolles fab - STMicroeletronics announced its 28nm FD-SOI Technology is ready for manufacturing in its leading-edge Crolles fab. At the SOI Consortium FD Symposium, ST... More →
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Archive of IBS

Common Platform Technology Forum 2013: SOI Highlights

Posted by Adele HARS on February 11, 2013
In Editor's Blog
Tagged with 14nm, 28nm, ARM, Cadence, FD-SOI, FinFET, Fully Depleted, GlobalFoundries, IBM, IBS, Photonics, R&D, rf, silicon-on-insulator, ST

The 2013 Common Platform Technology Forum showcased “the latest technological advances being delivered to the world’s leading electronics companies,” so of course SOI-based topics were well-represented. Happily, those of us who weren’t able to get over to Silicon Valley were able to attend “virtually” via a live stream (which is now reposted – click here …

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IBS Study Concludes FD-SOI Most Cost-Effective Technology Choice at 28nm and 20nm

Posted by Handel JONES (IBS) on November 9, 2012
In ASN #20, News & Viewpoints, SOI In Action
Tagged with 20nm, 28nm, cost, FD-SOI, FinFET, foundry, IBS, low-power, markets, mobile, wafers

In a recent study entitled Economic Impact of the Technology Choices at 28nm/20nm, International Business Strategies (IBS) has found that those companies choosing FD-SOI at 28nm and/or 20nm should benefit from substantial savings in cost-per-die (see figure). For a technology to be utilized in high-volume production, costs must be lower than previous generations of technology. …

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Archive of IBS

Common Platform Technology Forum 2013: SOI Highlights

IBS Study Concludes FD-SOI Most Cost-Effective Technology Choice at 28nm and 20nm