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Archive of GlobalFoundries

FD-SOI Keeps Moore’s Law on Track Thumbnail

FD-SOI Keeps Moore’s Law on Track

Posted by on February 28, 2014
In Editor's Blog, News & Viewpoints
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Take a look at this graph – it’s obvious, isn’t it? FD-SOI is significantly cheaper, outdoes planar bulk and matches bulk FinFET in the performance/power ratio, and keeps the industry on track with Moore’s Law. This was part of a presentation by ST’s Joël Hartmann (EVP of Manufacturing and Process R&D, Embedded Processing Solutions) during Semi’s […]

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A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space. Thumbnail

A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space.

Posted by on January 31, 2014
In Editor's Blog, News & Viewpoints
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STMicroelectronics will soon be announcing a “major foundry player” that will be both a dual FD-SOI manufacturing source for ST, plus an open source for the industry.  This important piece of news came out of the company’s Q4 and FY13 presentation in Paris on January 28th. While ST signed a licensing agreement with GlobalFoundries a […]

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GloFo could hit one out of the park with FD-SOI, says PC Perspectives

Posted on January 17, 2014
In Industry Buzz
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“If GLOBALFOUNDRIES has the ability to economically research, develop, and produce parts on 20 nm FD-SOI, they could be hitting one out of the park,” said Josh Walrath (citing the baseball expression for a big home run) in a long PC Perspectives article last fall (Oct. ’13). “The industry is clamoring for a product that […]

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SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs) Thumbnail

SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs)

Posted by on January 17, 2014
In Editor's Blog, News & Viewpoints
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As we noted in the previous post (click here if you missed it), 2014 should be a terrific year for the greater SOI community. But before we look forward (which we’ll do in an upcoming post), let’s continue considering where we’ve been and some of the highlights of the last year.  In fact, there was […]

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SOI: Looking Back Over a Year of Moving Forward (Part 1, FD-SOI) Thumbnail

SOI: Looking Back Over a Year of Moving Forward (Part 1, FD-SOI)

Posted by on January 13, 2014
In Editor's Blog, News & Viewpoints
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2014′s going to be a terrific year for the greater SOI community, with 28nm FD-SOI ramping in volume and 14nm debuting, plus RF-SOI continuing its stellar rise. But before we look forward (which we’ll do in an upcoming post), let’s consider where we’ve been and some of the highlights of the last year.  In fact, […]

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IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers Thumbnail

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

Posted by on December 19, 2013
In Conferences, Editor's Blog, Paperlinks
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SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM ’13.  Last week we covered the FD-SOI papers (click here if you missed that piece). In this post, we’ll cover the other major SOI et al papers – including those on FinFETs, RF and various advanced devices. Brief summaries, culled […]

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The FD-SOI Papers at IEDM ’13 Thumbnail

The FD-SOI Papers at IEDM ’13

Posted by on December 16, 2013
In Conferences, Editor's Blog, Paperlinks
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FD-SOI was a hot topic at this year’s IEEE International Electron Devices Meeting (IEDM) (www.ieee-iedm.org), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. The FD-SOI papers featured high performance, low leakage, ultra-low power (0.4V),  excellent variability, reliability and scalability down to the 10 nm node using thin SOI […]

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Peregrine Ships 2 Billionth UltraCMOS Chip, Signs with GlobalFoundries,  Celebrates 25 Years of RF-SOI Thumbnail

Peregrine Ships 2 Billionth UltraCMOS Chip, Signs with GlobalFoundries, Celebrates 25 Years of RF-SOI

Posted on November 4, 2013
In Industry Buzz
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Peregrine Semiconductor announced that it has shipped its 2 billionth chip, released version 10 of its UltraCMOS RF-SOI technology, and is working with GlobalFoundries. UltraCMOS technology is an advanced RF-SOI process, the latest versions of which leverage bonded silicon-on-sapphire (BSOS) substrates from Soitec. Peregrine did an excellent article for ASN last spring, clearly explaining the use […]

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FinFET vs. FD-SOI at IEDM (EETimes)

Posted on October 31, 2013
In Industry Buzz
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EETimes predicts a FD-SOI vs. FinFET showdown at the upcoming IEDM conference. At Session 9 on advanced CMOS platforms TSMC will provide details on the company’s 16nm bulk FinFET CMOS process, followed by a paper on the 14nm FD-SOI process by STMicroelectronics, Soitec, Leti, IBM, GlobalFoundries, and Renesas.

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GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET Thumbnail

GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET

Posted by on July 3, 2013
In Editor's Blog
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According to Shigeru Shimauchi, Country Manager, GlobalFoundries Japan, for the same level of performance, the die cost for 28nm FD-SOI will be substantially less than for 28nm bulk HPP (“high performance-plus”). Specifically, to get a 30%  increase in performance over 28nm bulk LPS PolySiON, HPP increases die cost by 30%, while FD-SOI only increases die […]

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