World-leading advanced substrate maker Soitec and compound materials leader Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets. Soitec applies its Smart CutTM layer-transfer process to Sumitomo’s bulk GaN wafers to generate engineered wafers with the same thermal expansion (CTE) as standard GaN wafers but at …

In recent months, Soitec has inked deals with: • Peregrine for joint development and production of a new, bonded silicon-on-sapphire (SOS) substrate for RFICs; • and with Sumitomo for the development of engineered gallium nitride (GaN) substrates for applications like high brightness LEDs as well as electric power devices designed for hybrid and full electric …

Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers to make lower-cost, high quality GaN engineered substrates for high-brightness LEDs and power devices for hybrid & electric vehicles.

GaN-on-Si is moving towards becoming a cost-effective enabler for next-generation LED and power devices. During the past decade gallium nitride (GaN) has become an important compound semiconductor as it enables numerous key applications in optoelectronics and in power electronics. GaN LED technology could well be the Holy Grail in terms of providing the next generation …

The G2REC project leader explains the role GaN can play in solving a major energy efficiency challenge. Under the aegis of the €30 million European G2REC (Grand Gap Rectifier) project, Jean-Baptiste Quoirin of STMicroelectronics, is leading a consortium of companies and labs tackling the problem of rectifiers for things like computer server power supplies and …

Project targets advanced materials for improved performance and electrical consumption. The Soitec Group, CEA-LETI and the French Agency for Industrial Innovation (AII) have teamed up on a new, €200 million materials research program dubbed the “NanoSmart” project. Nelly Kernevez, a well-known Léti researcher who recently joined Soitec, will head up the project. The European Commission …

UMS, which is jointly owned by Thales and EADS, is moving forward on GaN for some key applications. United Monolithic Semiconductors (UMS) is a leader in the design, manufacturing and marketing of advanced semiconductor technology for a number of specialized application areas. The company sees advantages in moving from GaAs to GaN for some of …

The G²REC program aims to create a new generation of energy-efficient power devices for high-volume applications over 250V. The greater electronics industry has an urgent need for fast-switching, high-voltage, energy-efficient and cost-competitive rectifiers. Rectifiers (which convert AC to DC) are comprised of diodes, components that ensure electricity flows in just one direction. For certain high-volume …

Jean-Luc Ledys explains how SopSiC can solve the GaN substrate dilemma. Picogiga International, a division of the Soitec Group recently announced pre-production availability of SopSiC, a Smart Cut™ engineered substrate for gallium nitride (GaN) based power-switching and high-frequency devices. Customer response has been very positive.

Results of the HYPHEN project indicate a new path to high-volume, high-power, and high-frequency wireless applications. The European HYPHEN GaN-RF project is developing and evaluating new types of composite substrates based on silicon and silicon carbide materials. These new substrates are designed to provide cost-efficient solutions for advanced high-power devices used in wireless communication systems …