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Archive of GaN

An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting

Posted on May 6, 2013
In Industry Buzz
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An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting. GT is developing an HVPE (high productivity hydride vapor phase epitaxy) system incorporating Soitec Phoenix Labs’ (a subsidiary of Soitec) unique and proprietary HVPE technology. This includes Soitec’s novel and …

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Soitec’s Smart Cut™ technology is now being leveraged to produce GaN substrates for high-performance LED lighting applications

Posted on May 6, 2013
In Industry Buzz
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Soitec‘s Smart Cut™ technology, best known for its role as the leading technology for producing SOI wafers, is now being leveraged to produce GaN substrates for high-performance LED lighting applications. Following a successful pilot line announced last year, Sumitomo Electric will now industrialize the product and invest in Smart Cut technology. Yoshiki Miura, general manager …

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Soitec and Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets

Posted on January 26, 2012
In Industry Buzz
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World-leading advanced substrate maker Soitec and compound materials leader Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets. Soitec applies its Smart CutTM layer-transfer process to Sumitomo’s bulk GaN wafers to generate engineered wafers with the same thermal expansion (CTE) as standard GaN wafers but at …

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Soitec has inked deals with Peregrine and Sumitomo

Posted on February 9, 2011
In Industry Buzz
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In recent months, Soitec has inked deals with: • Peregrine for joint development and production of a new, bonded silicon-on-sapphire (SOS) substrate for RFICs; • and with Sumitomo for the development of engineered gallium nitride (GaN) substrates for applications like high brightness LEDs as well as electric power devices designed for hybrid and full electric …

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Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers

Posted on December 15, 2010
In Industry Buzz
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Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers to make lower-cost, high quality GaN engineered substrates for high-brightness LEDs and power devices for hybrid & electric vehicles.

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GaN’s Bright Future

Posted by (Imec) on December 8, 2010
In Advanced Substrate Corners, ASN #16, III-V
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GaN-on-Si is moving towards becoming a cost-effective enabler for next-generation LED and power devices. During the past decade gallium nitride (GaN) has become an important compound semiconductor as it enables numerous key applications in optoelectronics and in power electronics. GaN LED technology could well be the Holy Grail in terms of providing the next generation …

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Closing the Rectifier Gap

Posted by (STMicroelectronics) on December 3, 2008
In Advanced Substrate Corners, ASN #11, III-V
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The G2REC project leader explains the role GaN can play in solving a major energy efficiency challenge. Under the aegis of the €30 million European G2REC (Grand Gap Rectifier) project, Jean-Baptiste Quoirin of STMicroelectronics, is leading a consortium of companies and labs tackling the problem of rectifiers for things like computer server power supplies and …

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EC Approves €200 Million NanoSmart

Posted on October 31, 2008
In ASN #8, In & Around Our Industry, R&D/Labnews
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Project targets advanced materials for improved performance and electrical consumption. The Soitec Group, CEA-LETI and the French Agency for Industrial Innovation (AII) have teamed up on a new, €200 million materials research program dubbed the “NanoSmart” project. Nelly Kernevez, a well-known Léti researcher who recently joined Soitec, will head up the project. The European Commission …

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GaN for High-Power RF

Posted by (United Monolithic Semiconductors) on May 14, 2008
In Advanced Substrate Corners, III-V
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UMS, which is jointly owned by Thales and EADS, is moving forward on GaN for some key applications. United Monolithic Semiconductors (UMS) is a leader in the design, manufacturing and marketing of advanced semiconductor technology for a number of specialized application areas. The company sees advantages in moving from GaAs to GaN for some of …

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A GaN Approach to Schottky Diodes

Posted by (Soitec) on October 31, 2007
In Advanced Substrate Corners, ASN #8, III-V
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The G²REC program aims to create a new generation of energy-efficient power devices for high-volume applications over 250V. The greater electronics industry has an urgent need for fast-switching, high-voltage, energy-efficient and cost-competitive rectifiers. Rectifiers (which convert AC to DC) are comprised of diodes, components that ensure electricity flows in just one direction. For certain high-volume …

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