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Archive of GaN

IP Value Starts at the Substrate Level Thumbnail

IP Value Starts at the Substrate Level

Posted by on October 19, 2013
In News & Viewpoints, SOI In Action
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If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can extend right down to the substrate level. Engineered, advanced wafer substrates open new doors for designers. For example, Soitec recently announcement that we are licensing some of our Smart Stacking™ […]

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SOI and other advanced substrate based technologies will be significant beneficiaries of the European Commission’s “New European Industrial Strategy for Electronics”, targeting the mobilization of €100 billion in new private investments.

Posted on June 6, 2013
In Industry Buzz
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SOI and other advanced substrate based technologies will be significant beneficiaries of the European Commission’s “New European Industrial Strategy for Electronics”, targeting the mobilization of €100 billion in new private investments. In addition to the recently announced €360M FD-SOI Places2Be project (which stands for Pilot Lines for Advanced CMOS Enhanced by SOI in 2x nodes, […]

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An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting

Posted on May 6, 2013
In Industry Buzz
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An agreement between Soitec and GT Advanced Technologies is aiming to lower the cost of LED production and accelerate adoption in commercial and residential lighting. GT is developing an HVPE (high productivity hydride vapor phase epitaxy) system incorporating Soitec Phoenix Labs’ (a subsidiary of Soitec) unique and proprietary HVPE technology. This includes Soitec’s novel and […]

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Soitec’s Smart Cut™ technology is now being leveraged to produce GaN substrates for high-performance LED lighting applications

Posted on May 6, 2013
In Industry Buzz
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Soitec‘s Smart Cut™ technology, best known for its role as the leading technology for producing SOI wafers, is now being leveraged to produce GaN substrates for high-performance LED lighting applications. Following a successful pilot line announced last year, Sumitomo Electric will now industrialize the product and invest in Smart Cut technology. Yoshiki Miura, general manager […]

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Soitec and Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets

Posted on January 26, 2012
In Industry Buzz
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World-leading advanced substrate maker Soitec and compound materials leader Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets. Soitec applies its Smart CutTM layer-transfer process to Sumitomo’s bulk GaN wafers to generate engineered wafers with the same thermal expansion (CTE) as standard GaN wafers but at […]

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Soitec has inked deals with Peregrine and Sumitomo

Posted on February 9, 2011
In Industry Buzz
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In recent months, Soitec has inked deals with: • Peregrine for joint development and production of a new, bonded silicon-on-sapphire (SOS) substrate for RFICs; • and with Sumitomo for the development of engineered gallium nitride (GaN) substrates for applications like high brightness LEDs as well as electric power devices designed for hybrid and full electric […]

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Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers

Posted on December 15, 2010
In Industry Buzz
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Soitec’s Smart Cut technology teams with Sumitomo Electric’s industry-leading GaN wafers to make lower-cost, high quality GaN engineered substrates for high-brightness LEDs and power devices for hybrid & electric vehicles.

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GaN’s Bright Future Thumbnail

GaN’s Bright Future

Posted by (Imec) on December 8, 2010
In Advanced Substrate Corners, ASN #16, III-V
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GaN-on-Si is moving towards becoming a cost-effective enabler for next-generation LED and power devices. During the past decade gallium nitride (GaN) has become an important compound semiconductor as it enables numerous key applications in optoelectronics and in power electronics. GaN LED technology could well be the Holy Grail in terms of providing the next generation […]

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Closing the Rectifier Gap Thumbnail

Closing the Rectifier Gap

Posted by (STMicroelectronics) on December 3, 2008
In Advanced Substrate Corners, ASN #11, III-V
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The G2REC project leader explains the role GaN can play in solving a major energy efficiency challenge. Under the aegis of the €30 million European G2REC (Grand Gap Rectifier) project, Jean-Baptiste Quoirin of STMicroelectronics, is leading a consortium of companies and labs tackling the problem of rectifiers for things like computer server power supplies and […]

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EC Approves €200 Million NanoSmart

Posted on October 31, 2008
In ASN #8, In & Around Our Industry, R&D/Labnews
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Project targets advanced materials for improved performance and electrical consumption. The Soitec Group, CEA-LETI and the French Agency for Industrial Innovation (AII) have teamed up on a new, €200 million materials research program dubbed the “NanoSmart” project. Nelly Kernevez, a well-known Léti researcher who recently joined Soitec, will head up the project. The European Commission […]

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