ASN

Archive of FinFET

FinFET or FD-SOI? Designers have a real choice, say experts Thumbnail

FinFET or FD-SOI? Designers have a real choice, say experts

Posted by on May 14, 2015
In Editor's Blog
Tagged with , , , , , , , , , , , , , , , , ,

Is FD-SOI a better choice than FinFETs for my chip? In some high-profile forums, designers are now asking that question. And the result is coming back: almost certainly. Is there a place for FinFETs? Of course there is. If it’s a really big digital chip –  no significant analog integration, where leakage not your biggest […]

Continue ReadingLeave a Comment
Synapse Design CEO Interview: Designs Taping Out for Very High-Volume 28nm FD-SOI SOCs, Production in 2016 Thumbnail

Synapse Design CEO Interview: Designs Taping Out for Very High-Volume 28nm FD-SOI SOCs, Production in 2016

Posted by on April 30, 2015
In Design & Manufacturing, SOI In Action
Tagged with , , , , , , , , , , , , , , , ,

ASN spoke recently with Satish Bagalkotkar, the CEO of Synapse Design, which he co-founded with Devesh Gautam in 2003. With 800+ employees, the firm designs chips for the biggest companies in the industry. He’s very optimistic about FD-SOI. Here’s why. Advanced Substrate News (ASN): How long has Synapse Design been working in FD-SOI? What sorts […]

Continue ReadingLeave a Comment
Samsung/ChipEstimate video gives strong plug for FD-SOI Thumbnail

Samsung/ChipEstimate video gives strong plug for FD-SOI

Posted on April 9, 2015
In Industry Buzz
Tagged with , , , , , , , , , , , , , ,

In a new YouTube video, Samsung’s Sr. Director of Foundry Marketing, Kelvin Low, makes a strong case for 28nm FD-SOI, especially for ultra-low-power, IoT, wearables, networking and automotive apps. The five-minute video was taped by ChipEstimate.TV host Sean O’Kane during the Cadence User Conference (CDNLive, Silicon Valley, March 2015 – click here to see it). […]

Continue ReadingLeave a Comment
SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
Tagged with , , , , , , , , , , , , , , , , , , , , , , , ,

Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

Continue ReadingLeave a Comment

IEEE SOI-3D-Substhreshold (S3S) Conference Issues Call for Papers

Posted on January 9, 2015
In Industry Buzz
Tagged with , , , , , , , , , , , , ,

The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) has issued the 2015 Call for Papers. Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and […]

Continue ReadingLeave a Comment

Strong uptick in FD-SOI patent activity, according to KnowMade report

Posted on January 9, 2015
In Industry Buzz
Tagged with , , , , , , , ,

There’s been a significant uptick in patents related to fully-depleted SOI, according to a new report by KnowMade (click here to get the report brochure).  The report looks at both FD-SOI and SOI-FinFETs (both of which are fully depleted technologies).  More than 740 patent families have been published to date, of which planar FD-SOI accounts for 340 families.  Following a […]

Continue ReadingLeave a Comment
SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
Tagged with , , , , , , , , , , , , , , , , , , ,

Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

Continue ReadingLeave a Comment
10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
Tagged with , , , , , , , , , , , , , , , ,

FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

Continue ReadingLeave a Comment
SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
Tagged with , , , , , , , , , , , , , , , , , , , , , , ,

ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

Continue ReadingView Comments (1)

With FD-SOI, Industry Takes Another Look at SOI (SemiEngineering)

Posted on October 27, 2014
In Industry Buzz
Tagged with , , , , , , ,

In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry’s accelerating interest in SOI, including FD-SOI and FinFETs on SOI. He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to […]

Continue ReadingLeave a Comment