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Archive of FD-SOI

2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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Leti’s M3D, now dubbed “CoolCube”, featured in EETimes Thumbnail

Leti’s M3D, now dubbed “CoolCube”, featured in EETimes

Posted on January 22, 2015
In Industry Buzz
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Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece.  Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM ’14.  Leti’s Advanced CMOS lab manager Maud Vinet detailed the “cool” process in […]

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Paul Boudre named Soitec CEO as company re-focuses on electronics business Thumbnail

Paul Boudre named Soitec CEO as company re-focuses on electronics business

Posted on January 22, 2015
In Industry Buzz
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Paul Boudre has been named CEO of SOI wafer leader, Soitec (see financial press release here).  The company also announced its plans to re-focus on its core electronics business unit. Q3 sales were 48 million euros, up 45% over last year. The sale of 200mm wafers (which are used in chips for RF-SOI and smartpower) […]

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New interactive webinar on FD-SOI design posted by CMC Thumbnail

New interactive webinar on FD-SOI design posted by CMC

Posted on January 12, 2015
In Industry Buzz
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A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click here to view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s […]

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SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
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Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

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IEEE SOI-3D-Substhreshold (S3S) Conference Issues Call for Papers

Posted on January 9, 2015
In Industry Buzz
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The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) has issued the 2015 Call for Papers. Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and […]

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Strong uptick in FD-SOI patent activity, according to KnowMade report

Posted on January 9, 2015
In Industry Buzz
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There’s been a significant uptick in patents related to fully-depleted SOI, according to a new report by KnowMade (click here to get the report brochure).  The report looks at both FD-SOI and SOI-FinFETs (both of which are fully depleted technologies).  More than 740 patent families have been published to date, of which planar FD-SOI accounts for 340 families.  Following a […]

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SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
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Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

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Samsung’s 28FDSOI – “the ideal choice” – comes with complete ecosystem

Posted on January 7, 2015
In Industry Buzz
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Samsung’s “28FDSOI comes with a complete design ecosystem (PDK, Library, IP, and DFM),” says Kelvin Low in a blog entitled, “2014, What a Year It’s Been for Samsung Foundry. (Click here to read it.) Kelvin’s Senior Director, Foundry Marketing at Samsung Semiconductor, Inc. Samsung licensed the process technology from ST in May 2014. “Customers who are looking […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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