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Archive of FD-SOI

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
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ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

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With FD-SOI, Industry Takes Another Look at SOI (SemiEngineering)

Posted on October 27, 2014
In Industry Buzz
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In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry’s accelerating interest in SOI, including FD-SOI and FinFETs on SOI. He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to […]

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FD-SOI entering mainstream, more tape-outs done, reports ElectronicsWeekly

Posted on October 17, 2014
In Industry Buzz
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In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here),  ElectronicsWeekly’s David Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. […]

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FD-SOI Front and Center at Very Successful Semicon Europa Thumbnail

FD-SOI Front and Center at Very Successful Semicon Europa

Posted by on October 17, 2014
In Conferences, Editor's Blog
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Yes, GlobalFoundries is hot on FD-SOI. Yes, Qualcomm’s interested in it for IoT. Yes, ST’s got more amazing low-power FD-SOI results. These are just some of the highlights that came out of the Low Power Conference during Semicon Europa in Grenoble, France (7-9 October 2014). This was Semicon Europa’s first time in Grenoble, the heart […]

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Shanghai RF-SOI and FD-SOI presentations being posted on SOI Consortium website

Posted on September 26, 2014
In Industry Buzz
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All the presentations made at the SOI Consortium‘s Shanghai workshops on RF-SOI and FD-SOI are now being posted. The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and […]

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ST Chooses WaveIntegrity from CWS for Early Noise Analysis in FD-SOI SOCs

Posted on September 26, 2014
In Industry Buzz
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STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements […]

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Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more Thumbnail

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

Posted by on September 26, 2014
In Conferences, Editor's Blog
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  For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major part of it (website link here). With more than 5000 visitors and 350 exhibitors, Semicon Europa is the greatest annual event for the European microelectronics industry. And Grenoble can fairly be considered the epicenter of […]

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Semiwiki Reveals TSMC’s FD-SOI Patent Activity

Posted on September 17, 2014
In Industry Buzz
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Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums.  In his piece When TSMC advocates FD-SOI…,  Esteve noted that TSMC’s patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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More FD-SOI myth-busting, courtesy semiwiki

Posted on September 11, 2014
In Industry Buzz
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In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI.  He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half […]

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