The Transition to Fully Depleted
Posted by Horacio MENDEZ (SOI Industry Consortium) on December 12, 2012In ASN #20, Special supplement: SOI Industry Consortium
Tagged with Consortium, design, fabless, FD-SOI, FinFET, Fully Depleted, manufacturing
The SOI Industry Consortium is actively engaged in supporting the industry’s transition to fully-depleted (FD) technologies. FD technologies offer: better electrostatics, so you’ve got stronger gate control; and lower channel doping, which enables better SRAMs that can operate stably at lower supply voltages – resulting in power savings of up to 40%. There are two …
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