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High volume, high yield production

Posted by (KLA Tencor) on December 4, 2009
In ASN #14, Design & Manufacturing, In & Around Our Industry
Tagged with , , , , , ,

At the 45nm node, substrate quality and uniformity are more critical than ever before to ensuring the best possible device performance. This is especially true in SOI wafers, where the substrate’s electronic structure is engineered to play an active role in enhancing carrier mobility or decreasing leakage current. Semiconductor manufacturers producing SOI-based devices utilize the […]

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