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Successful RF-SOI 2014 International Symposium Held in Shanghai Thumbnail

Successful RF-SOI 2014 International Symposium Held in Shanghai

Posted by and on December 5, 2014
In Conferences
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A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications. Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem […]

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SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
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ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

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Is China Interested in FD-SOI? You bet. Thumbnail

Is China Interested in FD-SOI? You bet.

Posted by on October 28, 2014
In Conferences, Editor's Blog, In & Around Our Industry
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At the recent FD-SOI Forum in Shanghai, the IoT (Internet of Things) was the #1 topic in all the presentations. The event was sponsored by the SOI Consortium, the Shanghai Institute of Microsystem and Information Technology / Chinese Academy of Sciences (SIMIT/CAS), and VeriSilicon. By all accounts it was a great success. Speakers included experts […]

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New RF-SOI switch “game-changer” for cable industry, says Peregrine Semi Thumbnail

New RF-SOI switch “game-changer” for cable industry, says Peregrine Semi

Posted on October 27, 2014
In Industry Buzz
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  Peregrine Semi senior marketing manager Kinana Hussain says the company’s new RF-SOI PE42722 switch “…is a game changer for the cable industry,” (see press release here). The UltraCMOS® PE42722 is a high-linearity RF switch that enables a dual upstream/downstream band architecture in cable customer premises equipment (CPE) devices. “By enabling a dual-band architecture, customers […]

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With FD-SOI, Industry Takes Another Look at SOI (SemiEngineering)

Posted on October 27, 2014
In Industry Buzz
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In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry’s accelerating interest in SOI, including FD-SOI and FinFETs on SOI. He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to […]

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FD-SOI entering mainstream, more tape-outs done, reports ElectronicsWeekly

Posted on October 17, 2014
In Industry Buzz
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In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here),  ElectronicsWeekly’s David Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. […]

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Soitec receives Sony’s Best Partnership Award for its support with RF-SOI substrates Thumbnail

Soitec receives Sony’s Best Partnership Award for its support with RF-SOI substrates

Posted on October 17, 2014
In Industry Buzz
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SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market. Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the company’s latest eSi substrates […]

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ST Chooses WaveIntegrity from CWS for Early Noise Analysis in FD-SOI SOCs

Posted on September 26, 2014
In Industry Buzz
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STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements […]

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Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more Thumbnail

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

Posted by on September 26, 2014
In Conferences, Editor's Blog
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  For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major part of it (website link here). With more than 5000 visitors and 350 exhibitors, Semicon Europa is the greatest annual event for the European microelectronics industry. And Grenoble can fairly be considered the epicenter of […]

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Semiwiki Reveals TSMC’s FD-SOI Patent Activity

Posted on September 17, 2014
In Industry Buzz
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Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums.  In his piece When TSMC advocates FD-SOI…,  Esteve noted that TSMC’s patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on […]

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