ASN

Archive of China

Skyworks credits part of its Q1 FY12 success to having commenced volume production of advanced SOI-based Antenna Switch Modules (ASMs) for Huawei Thumbnail

Skyworks credits part of its Q1 FY12 success to having commenced volume production of advanced SOI-based Antenna Switch Modules (ASMs) for Huawei

Posted on January 27, 2012
In Industry Buzz
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Skyworks credits part of its Q1 FY12 success to having commenced volume production of advanced SOI-based Antenna Switch Modules (ASMs) for Huawei. With ongoing development of advanced switching solutions for handsets, data cards, and other applications, Skyworks cites the SKY18108 as one example of their recent ASMs tailored to meet the needs and requirements of …

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Grace Semiconductor has added 0.13um SOI RF CMOS to its Technology Roadmap for Q2 2011 Thumbnail

Grace Semiconductor has added 0.13um SOI RF CMOS to its Technology Roadmap for Q2 2011

Posted on January 26, 2012
In Industry Buzz
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Grace Semiconductor, a leading foundry in China, added 0.13um SOI RF CMOS to its Technology Roadmap in Q2 2011. (Courtesy: Grace Semiconductor)

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RDA Microelectronics of Shanghai developed the RDASW91

Posted on September 21, 2011
In Industry Buzz
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Leveraging IBM’s RF SOI process, fabless RDA Microelectronics of Shanghai developed the RDASW91, the world’s first single-pole, nine-throw (SP9T) antenna switch with an integrated logic decoder and low pass filters in a single die solution. The target is the fast-growing multiband 3G handset market, wherein SOI offers superior performance and significant cost reduction compared to …

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Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT) Thumbnail

Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT)

Posted by (Peking University) on December 8, 2010
In Advanced Substrate Corners, ASN #16, Professor's Perspective
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Researchers in academia have partnered with industry to increase understanding of critical issues in advanced non-classical CMOS devices. Highly scaled devices present a new range of challenges with respect to critical issues such as leakage current, short-channel effects, high-field effects, variability, reliability, noise and parasitic impact. Device structure and material innovation are the primary enablers …

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News from Soitec

Posted on November 22, 2010
In Industry Buzz
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From Soitec: • teaming with TowerJazz to offer a backside illumination platform for high-end image sensors • volume production of a new generation of high-resistivity SOI substrates for cellular phone and Wi-Fi markets • joining forces with CEA-Leti to speed commercial adoption of 3D integration • supplying SOI substrates to CSMC in China for display …

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Soitec Makes Key Appointments Thumbnail

Soitec Makes Key Appointments

Posted on May 27, 2009
In ASN #12, In & Around Our Industry, People
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Announcements in worldwide and Asia sales; China distribution. Soitec, the world’s leading supplier of engineered substrates, has announced key appointments to its sales team and finance department, and a new distribution partnership for markets in China.

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At the China Auto Electronics show

Posted on July 16, 2008
In Industry Buzz
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At the China Auto Electronics show, Atmel announced driver ICs in BCD-on-SOI that enable engine-mounted electronics for control of small motors or valves.

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AMD, which builds its entire AMD64 line on SOI, is on a roll

Posted on July 11, 2006
In Industry Buzz
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• AMD, which builds its entire AMD64 line on SOI, is on a roll: – As of Q1 06, the AMD Opteron processor now accounts for 22.1 percent of the worldwide x86 server processors shipped in the first quarter, up from 16.4 percent in the 2005 fourth quarter. – Hard on the heels of the …

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