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Archive of ASIC

12nm FD-SOI on the Roadmap for H1/2019 Customer Tape-out! Says GloFo (While Giving 22FDX Ecosys a Great Boost) Thumbnail

12nm FD-SOI on the Roadmap for H1/2019 Customer Tape-out! Says GloFo (While Giving 22FDX Ecosys a Great Boost)

Posted by on September 15, 2016
In Design & Manufacturing, Editor's Blog
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12nm FD-SOI has now officially joined the GlobalFoundries’ roadmap, targeting intelligent, connected systems and beating 14/16nm FinFET on performance, power consumption (by 50%!) and cost (see press release here). Customer product tape-outs are expected to begin in the first half of 2019. GloFo also announced FDXcelerator™, an ecosystem designed to give 22FDX™ SoC design a […]

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Interview (part 2 of 2): Leti Is a Catalyst for the FD-SOI Ecosystem. CEO Marie Semeria Explains Where They’re Headed Thumbnail

Interview (part 2 of 2): Leti Is a Catalyst for the FD-SOI Ecosystem. CEO Marie Semeria Explains Where They’re Headed

Posted by on December 17, 2015
In Design & Manufacturing, News & Viewpoints, R&D/Labnews
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From wafers to apps, Leti has been the moving force behind all things SOI for over 30 years. Now they’re the powerhouse behind the FD-SOI phenomenon. CEO Marie-Noelle Semeria shares her insights here in part 2 of this exclusive ASN interview as to what Leti’s doing to drive the ecosystem forward. (In part 1, she […]

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Interview: Leti Is the Moving Force Behind FD-SOI. CEO Marie Semeria Explains the Strategy (part 1 of 2) Thumbnail

Interview: Leti Is the Moving Force Behind FD-SOI. CEO Marie Semeria Explains the Strategy (part 1 of 2)

Posted by on December 8, 2015
In Design & Manufacturing, News & Viewpoints, R&D/Labnews
Tagged with , , , , , , , , , , , , , , , , ,

From wafers to apps, Leti has been the moving force behind all things SOI for over 30 years. Now they’re the powerhouse behind the FD-SOI phenomenon. CEO Marie Semeria shares her insights here in part 1 of this exclusive ASN interview as to what makes Leti tick. In part 2, we’ll talk about Leti’s new […]

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28nm FD-SOI cryptocurrency ASIC first to debut in silicon, surpasses expectations with 0.45V operation Thumbnail

28nm FD-SOI cryptocurrency ASIC first to debut in silicon, surpasses expectations with 0.45V operation

Posted on April 21, 2015
In Industry Buzz
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Right on schedule, the SFARDS cryptocurrency ASIC on 28nm FD-SOI has made its debut in silicon, and is surpassing expectations. In what is clearly a stunning success, the company announced that the ASIC’s lowest working voltage is 0.45V. This means it operates stably at a power supply voltage that’s about half that of competing 28nm […]

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28nm FD-SOI Cryptocurrency Mining ASIC tapes out, to debut April 2015

Posted on March 11, 2015
In Industry Buzz
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Cryptocurrency mining hardware company SFARDS is preparing to release its debut miner, which is built on a 28nm FD-SOI ASIC, by April 2015. (You can read the announcement here.) At the time of this post, tape out of the company’s SF3301ASIC has been announced as complete. Cryptocurrency (the best-known example of which is Bitcoin) depends […]

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Memoir Systems’ Memory IP Now in ST’s FD-SOI ASICS & SOCs

Posted on November 8, 2013
In Industry Buzz
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Memoir Systems has made its revolutionary Algorithmic Memory Technology available for embedded memories in ASICs and SoCs manufactured in STMicroelectronic’s FD-SOI process technology. ST is a leading manufacturer of ASICs. “With our commitment to breakthrough memory technology, accelerated design times, and extreme high-performance, making our best-in-class Algorithmic Memory Technology available on FD-SOI was important to […]

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Interview: How NXP’s SOI Technology Enables Major Advance in Automotive Position Sensors Thumbnail

Interview: How NXP’s SOI Technology Enables Major Advance in Automotive Position Sensors

Posted by on August 8, 2011
In ASN #18, End-User Apps, SOI In Action
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Guenter Reiniger, Marketing Manager for NXP’s Automotive Sensors, explains how SOI helps eliminate the need for external components in a new magnetic sensor family. Advanced Substrate News (ASN): NXP recently announced the KMA210, the first in a new family of magnetoresistive (MR) sensor chips. What is it used for? Guenter Reiniger (GR): The KMA210 is […]

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IBM has developed a 32nm SOI prototype of the smallest

Posted on December 4, 2009
In Industry Buzz
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IBM has developed a 32nm SOI prototype of the smallest, densest and fastest on-chip eDRAM. It uses four times less standby power and has up to a thousand times lower soft-error rate. The technology will be used by a wide range of ASIC and foundry clients, and as well as in IBM’s servers. An initial […]

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Sandia National Laboratories

Posted on December 4, 2009
In Industry Buzz
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Sandia National Laboratories’ fab in Albuquerque, N.M., has been accredited by the U.S. Department of Defense to provide “trusted foundry” services for its strategically radiation-hardened, 3.3-volt, 0.35-micrometer SOI process, which produces custom, low-volume, high reliability ASICs for conditions of extreme temperature fluctuations, shock and radiation.

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SOI for ASICs: Right Into the Flow Thumbnail

SOI for ASICs: Right Into the Flow

Posted by (ARM) on May 11, 2007
In News & Viewpoints, SOI In Action
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Here’s why ARM, the industry’s leading provider of intellectual property for processor, peripheral and SoC design, sees SOI technology as a powerful tool in the quest for optimized performance and power consumption. Silicon-On-Insulator (SOI) technology offers designers an opportunity for product differentiation and value creation. Adopting well-designed SOI physical IP products gives ASIC designers additional […]

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