The right choice for 22nm SRAM
Posted by Changhwan SHIN and Tsu-Jae KING LIU (UC Berkeley) on December 4, 2009In Advanced Substrate Corners, ASN #14, Professor's Perspective
Tagged with 22nm, 6T-SRAM cells, FD-SOI, IEEE, SRAM, UC Berkeley
What is the best transistor structure to meet SRAM performance and yield requirements at the 22nm node? The semiconductor device research group at UC Berkeley pioneered the FinFET structure in 1998. Now SOI-based FinFETs lead the field of candidate structures to eventually replace the planar bulk MOSFET. In the near term, yield and manufacturability may …
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