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IEEE SOI-3D-Subthreshold Conference (S3S, Oct. Sonoma, CA) Welcoming Papers til mid-May Thumbnail

IEEE SOI-3D-Subthreshold Conference (S3S, Oct. Sonoma, CA) Welcoming Papers til mid-May

Posted by on April 27, 2015
In Conferences
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The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) is welcoming papers until May 18, 2015. Last year, the second edition of the IEEE S3S conference, founded upon the co-location of the IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference was a great success targetting key topics and attracting even more participants than […]

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Interview (Leti): How a new platform helps designers get the most out of FD-SOI for IoT, ULP Thumbnail

Interview (Leti): How a new platform helps designers get the most out of FD-SOI for IoT, ULP

Posted on April 9, 2015
In Design & Manufacturing, News & Viewpoints
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A driving force in FD-SOI, Leti recently announced a service called Silicon Impulse®, a new FD-SOI platform for IoT & ultra-low-power (ULP) apps that helps start-ups, SMEs and large companies evaluate, design, prototype & move to volume. Olivier Thomas, who’s in charge of the program and Ali Erdengiz, who’s Business Development Manager for Leti explain […]

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2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
In Editor's Blog
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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IEEE SOI-3D-Substhreshold (S3S) Conference Issues Call for Papers

Posted on January 9, 2015
In Industry Buzz
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The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) has issued the 2015 Call for Papers. Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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Two additions to Altatech equipment lines: 10x faster ultra-thin film deposition; Doppler nano-defect inspection captures true sizing and positioning Thumbnail

Two additions to Altatech equipment lines: 10x faster ultra-thin film deposition; Doppler nano-defect inspection captures true sizing and positioning

Posted on December 8, 2014
In Industry Buzz
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Two new products from semi equipment manufacturer Altatech: one for ultra-thin film deposition, and one for searching out nano-defects. Altatech is a division of Soitec, best known in the advanced substrates community for its leadership in SOI wafers. This part of the company, however, develops highly efficient, cost-effective inspection and chemical vapor deposition (CVD) technologies […]

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SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
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ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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Engaging Kleinman (ex-GF/Xilinx) piece on LinkedIn Advocates for 28nm FD-SOI

Posted on September 11, 2014
In Industry Buzz
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A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI.  Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), […]

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SST article details Leti’s Monolithic 3D presentation at Semicon West ’14

Posted on September 1, 2014
In Industry Buzz
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An excellent article in SST details Leti’s monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D’s VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the ‘solution for […]

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