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Archive of 3D

SST article details Leti’s Monolithic 3D presentation at Semicon West ’14

Posted (Peregrine/Murata) on September 1, 2014
In Industry Buzz
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An excellent article in SST details Leti’s monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D’s VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the ‘solution for […]

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Leti’s Monolithic 3D Highlighted in IEEE Spectrum

Posted on July 15, 2014
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An excellent article highlighting Leti’s work on monolithic 3D was recently published in the IEEE’s Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they’ve worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to […]

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2014 IEEE S3S (SOI/3D/SubVt) – Oct. SF – top speakers lined up; paper submissions til 26 May Thumbnail

2014 IEEE S3S (SOI/3D/SubVt) – Oct. SF – top speakers lined up; paper submissions til 26 May

Posted by on May 22, 2014
In Conferences
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IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference 6-9 October 2014 Westin San Francisco Airport, Millbrae, CA The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) is welcoming papers until May 26, 2014 (click here for submission guidelines).   Last year, the first edition of the IEEE S3S conference, founded upon the co-location of the IEEE […]

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U. Washington Selects Altatech (Soitec) CVD System to Develop New Process Materials Thumbnail

U. Washington Selects Altatech (Soitec) CVD System to Develop New Process Materials

Posted on April 9, 2014
In Industry Buzz
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The University of Washington’s Nanofabrication Facility (WNF) is the first North American institution to get an AltaCVD™ chemical vapor deposition (CVD) system (press release here). The AltaCVD system uses pulsed deposition technology to offer a unique combination of capabilities for developing new materials. It can perform atomic layer deposition (ALD) for exceptional 3D coverage at deposition rates […]

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Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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Interview: Leti CEO Laurent Malier on FD-SOI and more Thumbnail

Interview: Leti CEO Laurent Malier on FD-SOI and more

Posted on January 23, 2014
In News & Viewpoints, SOI In Action
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CEA-Leti is one of the world’s most important research institutes for micro- and nano-electronics. Key enabler to the greater SOI-based community, they’re the quiet mega-partner behind everything from Soitec’s Smart CutTM technology for SOI wafer manufacturing to the design and chip manufacturing technology in today’s FD-SOI revolution. Leti’s work always reaches far into our industry’s […]

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MonolithIC3D CEO Says SOI’s the Future Technology of Semiconductors Thumbnail

MonolithIC3D CEO Says SOI’s the Future Technology of Semiconductors

Posted on January 13, 2014
In Industry Buzz
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Following IEDM (Dec. ’13), Zvi Or-Bach, President & CEO of posted a SemiMD blog (click here) entitled Why SOI is the Future Technology of Semiconductors.  Beginning with the assertions that it’s cheaper and easier for FinFETS, it’s a natural for monolithic 3D ICs, and it best for next-gen transistor architectures, he goes on to elaborate […]

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Qualcomm Assessing Leti’s Sequential 3D

Posted on January 13, 2014
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Leti recently announced an agreement with Qualcomm Technologies, under which Qualcomm will assess the feasibility and the value of Leti’s sequential 3D technology. As opposed to 3D with TSVs, sequential 3D integration involves stacking active layers of transistors using molecular bonding. In his Electronics360 blog, Peter Clarke points out the synergies between the Leti process […]

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The IEEE S3S Conference Delivered Impressive Technical Content Thumbnail

The IEEE S3S Conference Delivered Impressive Technical Content

Posted by on November 18, 2013
In Conferences
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The new IEEE S3S conference promised rich content, as it merged both The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. The result was an excellent conference, with outstanding presentations from key players in each of the three topics covered. This quality was reflected in the increased attendance: almost 50% more […]

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SOI – 3D Integration – Subthreshold Microelectronics: Register now for the IEEE S3S! Thumbnail

SOI – 3D Integration – Subthreshold Microelectronics: Register now for the IEEE S3S!

Posted by (ARM) on September 13, 2013
In Conferences
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Last May, we already let you know about the IEEE S3S conference, founded upon the co-location of The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. Today, we would like let you know that the advance program is available, and to attract your attention on […]

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