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Archive of 28nm

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
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ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

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Is China Interested in FD-SOI? You bet. Thumbnail

Is China Interested in FD-SOI? You bet.

Posted by on October 28, 2014
In Conferences, Editor's Blog, In & Around Our Industry
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At the recent FD-SOI Forum in Shanghai, the IoT (Internet of Things) was the #1 topic in all the presentations. The event was sponsored by the SOI Consortium, the Shanghai Institute of Microsystem and Information Technology / Chinese Academy of Sciences (SIMIT/CAS), and VeriSilicon. By all accounts it was a great success. Speakers included experts […]

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FD-SOI entering mainstream, more tape-outs done, reports ElectronicsWeekly

Posted on October 17, 2014
In Industry Buzz
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In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here),  ElectronicsWeekly’s David Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. […]

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FD-SOI Front and Center at Very Successful Semicon Europa Thumbnail

FD-SOI Front and Center at Very Successful Semicon Europa

Posted by on October 17, 2014
In Conferences, Editor's Blog
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Yes, GlobalFoundries is hot on FD-SOI. Yes, Qualcomm’s interested in it for IoT. Yes, ST’s got more amazing low-power FD-SOI results. These are just some of the highlights that came out of the Low Power Conference during Semicon Europa in Grenoble, France (7-9 October 2014). This was Semicon Europa’s first time in Grenoble, the heart […]

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Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more Thumbnail

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

Posted by on September 26, 2014
In Conferences, Editor's Blog
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  For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major part of it (website link here). With more than 5000 visitors and 350 exhibitors, Semicon Europa is the greatest annual event for the European microelectronics industry. And Grenoble can fairly be considered the epicenter of […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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More FD-SOI myth-busting, courtesy semiwiki

Posted on September 11, 2014
In Industry Buzz
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In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI.  He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half […]

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Engaging Kleinman (ex-GF/Xilinx) piece on LinkedIn Advocates for 28nm FD-SOI

Posted on September 11, 2014
In Industry Buzz
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A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI.  Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), […]

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Good FD-SOI Summer Reading & Viewing Thumbnail

Good FD-SOI Summer Reading & Viewing

Posted by on September 1, 2014
In Editor's Blog
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  Over the summer, there have been a number of excellent posts on various sites related to FD-SOI, showing that interest is running ever higher. But, if you’ve been fortunate enough to have had some vacation time, you might have missed some of them, so here’s a brief listing to help you catch up. In […]

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ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Posted on August 21, 2014
In Industry Buzz
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Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate […]

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