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Archive of 28nm

Good FD-SOI Summer Reading & Viewing Thumbnail

Good FD-SOI Summer Reading & Viewing

Posted by on September 1, 2014
In Editor's Blog
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  Over the summer, there have been a number of excellent posts on various sites related to FD-SOI, showing that interest is running ever higher. But, if you’ve been fortunate enough to have had some vacation time, you might have missed some of them, so here’s a brief listing to help you catch up. In […]

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ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Posted on August 21, 2014
In Industry Buzz
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Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate […]

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FD-SOI: The Best Enabler for Mobile Growth and Innovation Thumbnail

FD-SOI: The Best Enabler for Mobile Growth and Innovation

Posted by on August 8, 2014
In Design & Manufacturing, News & Viewpoints, SOI In Action
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The following in-depth analysis, an IBS study entitled How FD-SOI will Enable Innovation and Growth in Mobile Platform Sales, concludes that the benefits of FD-SOI are overwhelming for mobile platforms through Q4/2017 based on a number of key metrics. In fact, FD-SOI has the ability to support three technology nodes, which can mean a useful […]

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Is FD-SOI Cheaper? Why yes!

Posted by on June 27, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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A debate is raging over at SemiWiki following a post there entitled “Is SOI Really Less Expensive?” by Scotten Jones (you can read it here). Within just over 48 hours, about 30 comments were made, with heavy hitters on both sides of the fence weighing in. While the post itself is about manufacturing economics, the […]

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Synopsys Design Flow Support for Samsung-ST 28nm FD-SOI (With More Details on What Designers Need to Know) Thumbnail

Synopsys Design Flow Support for Samsung-ST 28nm FD-SOI (With More Details on What Designers Need to Know)

Posted by on June 8, 2014
In Design & Manufacturing, Editor's Blog
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Following the big FD-SOI/EDA news, Synopsys has provided ASN with more details for designers.             The Synopsys’ Galaxy Design Platform has been extended to support the Samsung-STMicroelectronics strategic agreement on 28nm FD-SOI (see press release here). They’ve covered all the bases, so that designers going to Samsung’s foundry services for […]

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Samsung & ST 28nm FD-SOI Is Major Opportunity, Says IBS (EETimes)

Posted on May 28, 2014
In Industry Buzz
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In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting […]

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Samsung Foundry Marketing Director Writes About Extending 28nm With FD-SOI Thumbnail

Samsung Foundry Marketing Director Writes About Extending 28nm With FD-SOI

Posted on May 28, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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Samsung’s Senior Director Foundry Marketing Kelvin Low blogged enthusiastically about the recent Samsung-STMicroelectronics FD-SOI announcement  on the company’s website. He has graciously agreed to let ASN repost it here – and says we’ll be hearing more from him in the future.   Without further ado, here’s what he said:   While 14nm FinFET is the darling […]

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2014 IEEE S3S (SOI/3D/SubVt) – Oct. SF – top speakers lined up; paper submissions til 26 May Thumbnail

2014 IEEE S3S (SOI/3D/SubVt) – Oct. SF – top speakers lined up; paper submissions til 26 May

Posted by on May 22, 2014
In Conferences
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IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference 6-9 October 2014 Westin San Francisco Airport, Millbrae, CA The IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) is welcoming papers until May 26, 2014 (click here for submission guidelines).   Last year, the first edition of the IEEE S3S conference, founded upon the co-location of the IEEE […]

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ST-Samsung news hot topic in press and social media

Posted on May 19, 2014
In Industry Buzz
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Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories […]

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Samsung-ST FD-SOI news marks industry tipping point for mobile and consumer markets, says Soitec

Posted on May 19, 2014
In Industry Buzz
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The FD-SOI announcement by Samsung and ST represents a tipping point for FD-SOI deployment and for Soitec’s electronics business in the next decade (see Soitec press release here), says the company whose substrate technology makes it all possible. Soitec is the world leader in SOI wafer manufacturing. This announcement validates Soitec’s early strategic technology choice […]

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