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Archive of 28nm

Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance Thumbnail

FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance

Posted by and on March 26, 2014
In Design & Manufacturing, News & Viewpoints
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By Bich-Yen Nguyen and Christophe Maleville (Soitec) We are in the era of mobile computing with smart handheld devices and remote data storage “in the cloud,” with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life.  With all the ambitious requirements for better […]

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ST Article in EETimes Details How FD-SOI Supports Moore’s Law Thumbnail

ST Article in EETimes Details How FD-SOI Supports Moore’s Law

Posted on March 19, 2014
In Industry Buzz
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  A powerful, detailed article in EETimes-Asia details how FD-SOI Supports Moore’s Law (click here to read it).  Written by Laurent Remont, ST’s VP and GM for Technology and Product Strategy, Embedded Processing Solutions, it explores FD-SOI’s advantages in terms of price, power and performance versus planar bulk CMOS and FinFETs and 28nm and 14nm. Remont […]

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Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets Thumbnail

Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets

Posted by on March 19, 2014
In Design & Manufacturing, News & Viewpoints
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By Handel Jones IBS has recently issued a new white paper entitled Why Migration to 20nm Bulk CMOS and 16/14nm FinFETs Is Not the Best Approach for the Semiconductor Industry.  The focus of the analysis is on technology options that can be used to give lower cost per gate and lower cost per transistor within […]

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FD-SOI, Body-Biasing Shine in 10x Faster DSP With Ultra-Wide Voltage Range Thumbnail

FD-SOI, Body-Biasing Shine in 10x Faster DSP With Ultra-Wide Voltage Range

Posted by on February 20, 2014
In Conferences, Design & Manufacturing, Editor's Blog, R&D/Labnews
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Body-biasing design techniques, uniquely available in FD-SOI, have allowed STMicroelectronics and CEA-Leti to demonstrate a DSP that runs 10x faster than anything the industry’s seen before at ultra-low voltages (read press release here). In the mobile world (not to mention the IoT), the role of DSPs is becoming ever more important. All those things you […]

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Leti, ST Demo Order-of-Magnitude-Faster, Ultra-Low Power DSP on 28nm FD-SOI

Posted on February 18, 2014
In Industry Buzz
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CEA-Leti and STMicroelectronics presented an order-of-magnitude-faster FD-SOI Ultra-Wide-Voltage Range (UWVR) DSP at ISSCC ’14. The device was produced by ST in 28nm UTBB FD-SOI. It allows body-bias-voltage scaling from 0V to +2V, decreases minimum circuit operating voltage and supports clock-frequency operation of 460MHz at 400mV. “This demonstration DSP shows that FD-SOI is blazing the trail […]

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IP for FD-SOI: Examples from ST Thumbnail

IP for FD-SOI: Examples from ST

Posted by on February 14, 2014
In Design & Manufacturing, Editor's Blog
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Interested in energy-efficient SOCs? At the IP-SOC Conference last fall, STMicroelectronics’ Giorgio Cesana presented examples of the technological competitiveness of FD-SOI IP for memories, cores, ultra-low voltage and analog. Here’s a brief recap. The complete presentation, entitled “FD-SOI Technology for Energy-Efficient SoCs: IP Development Examples” is available on the Design & Reuse website (click here […]

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CMP delivers multi-project wafer runs of 28nm FD-SOI with impressive device performance Thumbnail

CMP delivers multi-project wafer runs of 28nm FD-SOI with impressive device performance

Posted on January 31, 2014
In Industry Buzz
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CMP recently delivered the first 28nm FD-SOI/10LM multi-project wafer run, Kholdoun Torki, Technical Director at CMP has indicated. “We received positive feedback on the test results with quite impressive device performance,” he said. The PDK is from ST, making this a success for both STMicroelectronics and CMP. 
In 2013, they had 32 prototypes from 15 customers over […]

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Interview: Leti CEO Laurent Malier on FD-SOI and more Thumbnail

Interview: Leti CEO Laurent Malier on FD-SOI and more

Posted on January 23, 2014
In News & Viewpoints, SOI In Action
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CEA-Leti is one of the world’s most important research institutes for micro- and nano-electronics. Key enabler to the greater SOI-based community, they’re the quiet mega-partner behind everything from Soitec’s Smart CutTM technology for SOI wafer manufacturing to the design and chip manufacturing technology in today’s FD-SOI revolution. Leti’s work always reaches far into our industry’s […]

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ST leverages latest 64-bit ARM cores & 28nm FD-SOI for digital home SoCs

Posted on January 17, 2014
In Industry Buzz
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STMicroelectronics has released details of its innovative STi8K™ architecture addressing future Systems-on-Chips (SoCs) for the Digital Home (press release here).  Optimized for ST’s 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) and smaller-geometry manufacturing processes, the STi8K™ architecture leverages the increased data throughput, the extended memory addressing, and the reduced power consumption of the latest ARM® Cortex™-A53 and […]

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