Fully-Depleted SOI (and more) at VLSI (Kyoto): some knock-your-socks-off papers
Posted by Adele HARS on June 12, 2013In Advanced Substrate Corners, Conferences, Editor's Blog, Paperlinks
Tagged with 10nm, 28nm 14nm, 32nm, analog, ARM, conference, FD-SOI, FinFET, GlobalFoundries, IBM, Leti, nanowire, R&D, rf, Samsung, silicon-on-insulator, Soitec, SOTB, SRAM, STMicroelectronics, strain
Look for some breakthrough FD-SOI and other excellent SOI-based papers coming out of the 2013 Symposia on VLSI Technology and Circuits in Kyoto (June 10-14). By way of explanation, VSLI comprises two symposia: one on Technology; one on Circuits. However, papers that are relevant to both are presented in “Jumbo Joint Focus” sessions. Here’s a …
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