IBS Study Concludes FD-SOI Most Cost-Effective Technology Choice at 28nm and 20nm
Posted by Handel JONES (IBS) on November 9, 2012In ASN #20, News & Viewpoints, SOI In Action
Tagged with 20nm, 28nm, cost, FD-SOI, FinFET, foundry, IBS, low-power, markets, mobile, wafers
In a recent study entitled Economic Impact of the Technology Choices at 28nm/20nm, International Business Strategies (IBS) has found that those companies choosing FD-SOI at 28nm and/or 20nm should benefit from substantial savings in cost-per-die (see figure). For a technology to be utilized in high-volume production, costs must be lower than previous generations of technology. …
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