Held every December, the IEEE International Electron Devices Meeting (IEDM) (www.ieee-iedm.org) presents the best applied research in electronics from corporate, university and government labs around the world. Brief descriptions of the IEDM 2011 papers with research related to SOI and some other advanced substrates follows. The full program is available at: http://www.his.com/~iedm/program/11advprg.pdf The papers themselves …

Website: http://isscc.org 20-24 February 2011, San Francisco, CA ISSCC – the International Solid-State Circuits Conference – is the flagship conference of the Solid-State Circuits Society. It is widely considered the premier forum for presenting advances in solid-state circuits and systems-on-a-chip. Here is a round-up of this year’s major SOI-based papers. Session 4: Enterprise Processors & …

The 2010 IEEE International Electron Devices Meeting (IEDM) was held December 6-8, 2010 in San Francisco. The IEDM continues to be the world’s premier venue for presenting the latest breakthroughs and the broadest and best technical information in electronic device technologies. Here are summaries of key papers referencing work on SOI or other advanced substrates. …

23 – 28 January 2010, San Francisco http://spie.org/x39144.xml SPIE Photonics West is North America’s largest commercial exhibition on optics, lasers, biomedical optics, optoelectronic components, and imaging technologies. Self-aligned mask less process for etching cavities in SOI wafers to enhance the quality factor of MEMS resonators. Wajihuddin Mohammad, et al. (Louisiana Tech) Fabrication and characterization of …

25-27 January 2010, Grenoble, France http://grenoble2010.eurosoi.org/ EuroSOI is an annual, international forum to promote interaction and exchanges between research groups and industrial partners involved in SOI activities all over the world. This year’s conference was held at Grenoble’s Minatec innovation campus, an international center for micro and nanotechnologies. An intimate but lively event, the conference …

7-9 December 2009, Baltimore, MD, USA www.his.com/~iedm The IEEE’s International Electron Devices Meeting (IEDM) is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here is a comprehensive listing of the papers of interest to the SOI and advanced substrates community. Dual metallic source and drain integration on planar …

Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability X. Garros, et al.  (Leti, Soitec) J. Appl. Phys. 105, 114508 (2009). Elastic relaxation in patterned and implanted strained silicon on insulator S. Baudot, et al.  (CEA-CNRS, Leti) J. Appl. Phys. 105, 114302 (2009) …

11-15 October 2009 – San Jose, CA, USA www.frontiersinoptics.com Low Insertion Loss SOI Microring Resonator Integrated with Nano-Taper Couplers M.Pu, et al. (TU Denmark, Koheras A/S)

This workshop addresses the latest trends in the field of MOVPE growth of semiconductors, device fabrication and related technological problems. 7-10 June – Ulm, Germany www.uni-ulm.de Development of thick GaN on silicon layers for ultrafast rectifier applications D.Schenck, et al. (Picogiga)

The International Microwave Symposium (IMS) is the world’s premier Microwave conference. 7-12 June 2009 – Boston, MA, USA www.ims2009.org A High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates T. E. Kazior, et al. (Raytheon, IQE, Teledyne, MIT, Soitec, Leti)