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FD-SOI: The Substrates Are Ready Thumbnail

FD-SOI: The Substrates Are Ready

Posted by (Soitec) on May 25, 2011
In ASN #17, Design & Manufacturing, In & Around Our Industry, Power
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At the most recent SOI Consortium FD-SOI workshop, Soitec gave a presentation on FD-SOI substrate readiness. Here are some of the highlights. The roadmap for FD-SOI architectures requires SOI wafer structures with ultra-thin top silicon and ultra-thin insulating BOX (Xtreme SOI TM). Using our industry-standard Smart CutTM technology, Soitec is ramping these wafers in production […]

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Smart power saves power Thumbnail

Smart power saves power

Posted by (STMicroelectronics) on April 8, 2011
In ASN #17, End-User Apps, Power, SOI In Action
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ST’s newest SOI-based smart power technology delivers big reductions in power consumption in medical equipment, hybrid-electric-vehicle chargers and more. There is an urgent need for semiconductor technologies that can drastically reduce electrical energy consumption in consumer and industrial appliances. At STMicroelectronics, we have developed new SOI-based smart power technology that will make a significant difference […]

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Just 0.3V operating voltage for Seiko Instruments Inc.’s charge-pumping FD-SOI IC Thumbnail

Just 0.3V operating voltage for Seiko Instruments Inc.’s charge-pumping FD-SOI IC

Posted on December 7, 2005
In Advanced Substrate Corners, ASN #3, Power
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www.sii-ic.com SII’s new chip can leverage energy sources such as personal body-heat or natural illumination   SII (Seiko Instruments Inc., Japan) has successfully developed a charge-pumping IC that can operate on a minimum input voltage of just 0.3 volts.

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