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Samsung Foundry Marketing Director Writes About Extending 28nm With FD-SOI Thumbnail

Samsung Foundry Marketing Director Writes About Extending 28nm With FD-SOI

Posted on May 28, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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Samsung’s Senior Director Foundry Marketing Kelvin Low blogged enthusiastically about the recent Samsung-STMicroelectronics FD-SOI announcement  on the company’s website. He has graciously agreed to let ASN repost it here – and says we’ll be hearing more from him in the future.   Without further ado, here’s what he said:   While 14nm FinFET is the darling […]

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It’s Samsung! Announcement with ST confirms new tier-1 foundry for faster, cooler, simpler 28nm FD-SOI Thumbnail

It’s Samsung! Announcement with ST confirms new tier-1 foundry for faster, cooler, simpler 28nm FD-SOI

Posted by on May 14, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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Great news: Samsung and STMicroelectronics have revealed that Samsung is the new 28nm FD-SOI foundry (see the press release here.) Specifically, the two companies announced, “…a comprehensive agreement on 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.” The agreement covers ST’s 28nm FD-SOI design platform: the design enablement ecosystem and the process technology. […]

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A New Top-Tier FD-SOI Foundry – But Which One?

Posted by on May 7, 2014
In Editor's Blog, News & Viewpoints
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By Adele Hars, ASN Editor-in-Chief Speculation is mounting following ST’s April 28th announcement that they’d signed on a new first-tier foundry for 28nm FD-SOI manufacturing.  As of this posting, they haven’t yet said which one it is. The social media-sphere is abuzz about the mystery foundry – with posters in LinkedIn groups, Twitter, SemiWiki and […]

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FD-SOI Keeps Moore’s Law on Track Thumbnail

FD-SOI Keeps Moore’s Law on Track

Posted by on February 28, 2014
In Editor's Blog, News & Viewpoints
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Take a look at this graph – it’s obvious, isn’t it? FD-SOI is significantly cheaper, outdoes planar bulk and matches bulk FinFET in the performance/power ratio, and keeps the industry on track with Moore’s Law. This was part of a presentation by ST’s Joël Hartmann (EVP of Manufacturing and Process R&D, Embedded Processing Solutions) during Semi’s […]

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FD-SOI, Body-Biasing Shine in 10x Faster DSP With Ultra-Wide Voltage Range Thumbnail

FD-SOI, Body-Biasing Shine in 10x Faster DSP With Ultra-Wide Voltage Range

Posted by on February 20, 2014
In Conferences, Design & Manufacturing, Editor's Blog, R&D/Labnews
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Body-biasing design techniques, uniquely available in FD-SOI, have allowed STMicroelectronics and CEA-Leti to demonstrate a DSP that runs 10x faster than anything the industry’s seen before at ultra-low voltages (read press release here). In the mobile world (not to mention the IoT), the role of DSPs is becoming ever more important. All those things you […]

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IP for FD-SOI: Examples from ST Thumbnail

IP for FD-SOI: Examples from ST

Posted by on February 14, 2014
In Design & Manufacturing, Editor's Blog
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Interested in energy-efficient SOCs? At the IP-SOC Conference last fall, STMicroelectronics’ Giorgio Cesana presented examples of the technological competitiveness of FD-SOI IP for memories, cores, ultra-low voltage and analog. Here’s a brief recap. The complete presentation, entitled “FD-SOI Technology for Energy-Efficient SoCs: IP Development Examples” is available on the Design & Reuse website (click here […]

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A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space. Thumbnail

A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space.

Posted by on January 31, 2014
In Editor's Blog, News & Viewpoints
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STMicroelectronics will soon be announcing a “major foundry player” that will be both a dual FD-SOI manufacturing source for ST, plus an open source for the industry.  This important piece of news came out of the company’s Q4 and FY13 presentation in Paris on January 28th. While ST signed a licensing agreement with GlobalFoundries a […]

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SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs) Thumbnail

SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs)

Posted by on January 17, 2014
In Editor's Blog, News & Viewpoints
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As we noted in the previous post (click here if you missed it), 2014 should be a terrific year for the greater SOI community. But before we look forward (which we’ll do in an upcoming post), let’s continue considering where we’ve been and some of the highlights of the last year.  In fact, there was […]

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SOI: Looking Back Over a Year of Moving Forward (Part 1, FD-SOI) Thumbnail

SOI: Looking Back Over a Year of Moving Forward (Part 1, FD-SOI)

Posted by on January 13, 2014
In Editor's Blog, News & Viewpoints
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2014’s going to be a terrific year for the greater SOI community, with 28nm FD-SOI ramping in volume and 14nm debuting, plus RF-SOI continuing its stellar rise. But before we look forward (which we’ll do in an upcoming post), let’s consider where we’ve been and some of the highlights of the last year.  In fact, […]

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IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers Thumbnail

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

Posted by on December 19, 2013
In Conferences, Editor's Blog, Paperlinks
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SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM ’13.  Last week we covered the FD-SOI papers (click here if you missed that piece). In this post, we’ll cover the other major SOI et al papers – including those on FinFETs, RF and various advanced devices. Brief summaries, culled […]

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