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Back-biasing for FD-SOI – a simple way to meet power/performance targets Thumbnail

Back-biasing for FD-SOI – a simple way to meet power/performance targets

Posted by on November 2, 2013
In Design & Manufacturing, Editor's Blog
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FD-SOI with back-biasing* (BB – also referred to as body-biasing) is an immensely powerful tool, especially for getting great performance at very low voltages with extremely low leakage. Implemented on a smartphone processor, it’s what would give you that extra day of battery life or get you to 3GHz. But what does it mean for […]

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Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest Thumbnail

Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest

Posted by on October 14, 2013
In Design & Manufacturing, Editor's Blog
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Another RF-SOI solution is making headlines. Leveraging SOI, Toshiba has announced an SP10T RF antenna switch for the smartphone market. The company says it achieves the industry’s lowest insertion loss and smallest size. The company credits its new generation TaRF5 process, the latest in its line of Toshiba-original TarfSOI™ (Toshiba advanced RF SOI) processes. The […]

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Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A  – That’s SOI! Thumbnail

Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A – That’s SOI!

Posted by on September 26, 2013
In Editor's Blog
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Peregrine has announced that the company’s new UltraCMOS antenna switch is driving RF performance in the Samsung Galaxy S4 LTE-A smartphone. UltraCMOS technology is an advanced RF SOI process leveraging bonded silicon-on-sapphire (BSOS) substrates from Soitec. The new dual SP7T Multiswitch in the Samsung leverages Peregrine’s latest version of its UltraCMOS® process technology, STeP8 for RF […]

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New FD-SOI Design Group on LinkedIn Thumbnail

New FD-SOI Design Group on LinkedIn

Posted by on August 30, 2013
In Editor's Blog
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Designers using or thinking of moving to FD-SOI now have a LinkedIn group of their own: the FD-SOI Design Community.  It’s an open group, and was started just a few days ago. As noted in the group profile: ”(…)FD-SOI technology opens the door to new design opportunities. 
This group was created to discuss and share new […]

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Microsemi, Honeywell <i>et al</i> Leveraging SOI to Curb CO<sub>2</sub> Emissions Thumbnail

Microsemi, Honeywell et al Leveraging SOI to Curb CO2 Emissions

Posted by on August 21, 2013
In Editor's Blog
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The furnace in your home’s basement might not be as sexy as your smartphone, but when it comes to making a difference to the planet, it’s awfully important. That’s why Microsemi and Honeywell have teamed up with Cissoid, Cambridge CMOS Sensors and several top universities like UCL, Cambridge and Warwick in a €4 million ($5.3 […]

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FD-SOI Gets Big Boost from Nano2017 Program and Impresses ARM CEO Thumbnail

FD-SOI Gets Big Boost from Nano2017 Program and Impresses ARM CEO

Posted by on August 16, 2013
In Editor's Blog
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At a high-profile ceremony near Grenoble last month, FD-SOI got a big boost – a 600 million Euro boost (about $800 million), to be exact.  Top French ministers gathered at the STMicroelectronics site in Crolles (near Grenoble) for the launch of the Nano2017 Research and Development program. Also present at the ceremony were key partners […]

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More than 65% Smartphone RF Switches on SOI, Says Yole; Power Amps Next

Posted by on July 19, 2013
In Editor's Blog
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The industry research firm Yole Développement says that more than 65 percent of substrates used in fabricating switches for handsets are SOI-based. This is a high-growth part of the market, putting up double-digit increases. Like a standard SOI wafer, an RF SOI substrate has an active (“top”) layer on which CMOS transistors are built, with […]

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Ready for FD-SOI, Says World’s Largest Silicon Wafer Company Thumbnail

Ready for FD-SOI, Says World’s Largest Silicon Wafer Company

Posted by on July 11, 2013
In Editor's Blog
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The world’s largest maker of silicon wafers, Shin‐Etsu Handotai (SEH) says it’s meeting the specs for FD-SOI wafers, and can quickly expand capacity to meet rising demand. This message was delivered by Nobuhiko Noto of SEH during his presentation at the recent FD-SOI Workshop in Kyoto, Japan. SEH, a $12.7 billion company supplying over 20% […]

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GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET Thumbnail

GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET

Posted by on July 3, 2013
In Editor's Blog
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According to Shigeru Shimauchi, Country Manager, GlobalFoundries Japan, for the same level of performance, the die cost for 28nm FD-SOI will be substantially less than for 28nm bulk HPP (“high performance-plus”). Specifically, to get a 30%  increase in performance over 28nm bulk LPS PolySiON, HPP increases die cost by 30%, while FD-SOI only increases die […]

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Which will hit the 14nm jackpot first: FD-SOI or FinFET? Gauntlet down. Race on. Thumbnail

Which will hit the 14nm jackpot first: FD-SOI or FinFET? Gauntlet down. Race on.

Posted by on June 21, 2013
In Editor's Blog
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STMicroelectronics CTO Jean-Marc Chery threw down the gauntlet when he told Electronics Weekly, “We must be ready with 14nm FD-SOI before anyone has FinFET at 14nm.” Can they do it? Yes, they can. Unlike FinFETs, Planar FD-SOI is not a disruptive technology – FD-SOI is an extension of the planar CMOS we all know and […]

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