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SOI for MEMS: A Promising Material Thumbnail

SOI for MEMS: A Promising Material

Posted by (Yole Développement) on March 25, 2011
In ASN #17, In & Around Our Industry, MEMS, News & Viewpoints
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A new Yole report highlights growth of SOI MEM S. Although MEMS technologies are not driven by CD shrinking as ICs, that does not mean MEMS do not undergo strong technological evolutions. The ever-growing MEMS markets, today mostly driven by consumer applications, now have to be performance-driven, cost-driven and size driven. SOI wafers are a […]

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A Good Time for Innovation Thumbnail

A Good Time for Innovation

Posted by (Yole Développement) on May 27, 2009
In ASN #12, News & Viewpoints, SOI In Action
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Yole looks for a wide range of MEMS-based products to be introduced this year. Despite the current economic situation, a piece of good news is that innovation will not come to a halt in 2009: we expect that this will be one of the greatest years ever for new product introductions. The MEMS market in […]

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3D ICs: Opportunities & Timing Thumbnail

3D ICs: Opportunities & Timing

Posted by (Yole Développement) on August 16, 2008
In ASN #10, News & Viewpoints, SOI In Action
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A new study from Yole on 3D ICs sees a bright future for applications, markets and active layer transfer technology. Chip performance, size and functionality – especially for consumer electronics – will drive the industry to adopt 3D stacked chips with through-silicon vias (TSVs) replacing wire bonding for certain markets in the 2009-2015 time frame. […]

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Thick SOI: MEMS Moves Up in $75M Materials Market Thumbnail

Thick SOI: MEMS Moves Up in $75M Materials Market

Posted by (Yole Développement) on July 11, 2006
In ASN #5, News & Viewpoints, SOI In Action
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Market analysts at Yole look at the rapid growth of thick film SOI for MEMS applications. While thin-film SOI applications (especially for microprocessors) dominate SOI markets, thick-film SOI applications account for more than 20% of the total SOI production. SOI is considered “thick” when the thickness of the top single-crystal silicon layer is 1µm or […]

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Innovation Accompanies Steady Growth In Power Devices Thumbnail

Innovation Accompanies Steady Growth In Power Devices

Posted by (Yole Développement) on April 6, 2006
In Advanced Substrate Corners, ASN #4, III-V
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The power devices market may be small, but it has a strong tradition of pioneering important advanced technologies. Within the microelectronics world, the power devices industry stands apart. There are very few standards, and overall it represents only about 10% of the mainstream semiconductor business. Applications cover a broad range, including industrial, automotive, traction motors […]

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High-Growth GaN Applications Could Get a Boost Thumbnail

High-Growth GaN Applications Could Get a Boost

Posted by (Yole Développement) on July 11, 2005
In Advanced Substrate Corners, ASN #2, III-V
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Replacing epitaxy with bonding could pave the way for 4” substrates. Gallium nitride (GaN) based blue-white HB-LEDs (High-Brightness LEDs) are now at full production level, posting a CAGR of over 51% and targeting markets in automotives, IT, and general lighting.

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