ASN

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High volume, high yield production Thumbnail

High volume, high yield production

Posted by (KLA Tencor) on December 4, 2009
In ASN #14, Design & Manufacturing, In & Around Our Industry
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At the 45nm node, substrate quality and uniformity are more critical than ever before to ensuring the best possible device performance. This is especially true in SOI wafers, where the substrate’s electronic structure is engineered to play an active role in enhancing carrier mobility or decreasing leakage current. Semiconductor manufacturers producing SOI-based devices utilize the […]

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New Technology Captures Defects of Interest at 45nm Thumbnail

New Technology Captures Defects of Interest at 45nm

Posted by (KLA Tencor) on May 11, 2007
In ASN #7, Design & Manufacturing, In & Around Our Industry
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New in-line inspection equipment from KT reaches new heights in accuracy for sorting out cleanable particles from killer defects. At the 45nm node, the very nature of the defects and the particularities of the substrate impact light scattering detection methodologies. KLA-Tencor’s new Surfscan SP2XP system not only captures more shallow defects like stains or residues, […]

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Achieving High Throughput Inspection of Multiple SOI Wafers Thumbnail

Achieving High Throughput Inspection of Multiple SOI Wafers

Posted by (KLA Tencor) on December 7, 2005
In ASN #3, Design & Manufacturing, In & Around Our Industry
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Historically, chipmakers conducting incoming quality control (IQC) on SOI wafers used for advanced logic devices are challenged in inspecting these substrates as efficiently and effectively as their bulk counterparts. The prevailing inspection process utilizes visible light inspection systems. However, these systems often require specific recipe setups and tool calibrations for each SOI wafer type and […]

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