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The Moment Is Now Thumbnail

The Moment Is Now

Posted by (Hitachi) on July 26, 2010
In ASN #15, Design & Manufacturing, In & Around Our Industry
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There’s no need to wait – Hitachi’s SOTB solution also benefits today’s mainstream low-power nodes. Hitachi’s Hybrid Silicon-On-Thin-Box (SOTB)-Bulk technology offers many benefits for low-power system-on-chips (SOCs) at 45nm –  and even at 65nm. There is no reason to wait for 22nm to start taking advantage of them. The four most significant reasons to change […]

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Less Than Ever Thumbnail

Less Than Ever

Posted by (Hitachi) on May 27, 2009
In Advanced Substrate Corners, ASN #12, Conferences
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Hitachi demonstrates why it has the smallest Vth variability, and identifies the remaining components of random doping fluctuation. In a “Comprehensive Study on Vth Variability in Silicon on Thin BOX (SOTB) CMOS with Small Random-Dopant Fluctuation: Finding a Way to Further Reduce Variation,” (N. Sugii et. al., IEDM 2008) Hitachi scientists at the Central Research […]

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Thin BOX: A Solution for High-Speed, Low-Power SoCs Thumbnail

Thin BOX: A Solution for High-Speed, Low-Power SoCs

Posted by (Hitachi) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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Control of Si substrate bias in “Silicon on Thin BOX” suppresses leakage current at 45nm and beyond. Leakage currents in MOSFETs, originating in scattering from device features, pose a serious challenge in high-performance, low-power SoCs (system-on-a-chip), which are applicable to mobile products. The situation becomes more critical at the 45nm technology node.

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Full use of SOI advantages enables small, thin, and low-cost RFIDs Thumbnail

Full use of SOI advantages enables small, thin, and low-cost RFIDs

Posted by (Hitachi) on December 6, 2006
In ASN #6, End-User Apps, SOI In Action
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A lead developer of Hitachi’s µ-chip explains the SOI benefits. By using SOI, we could make an ultra-small RFID chip. In particular, its excellent isolation capability enabled successful miniaturization of the analog circuits in the front-end of the part. Also, BOX (Buried OXide) acts as an etch-stop layer in the self-controlled process, resulting in an […]

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