ASN

Archive of Professor’s Perspective

Strained Engineered Substrates: sSOI and Beyond Thumbnail

Strained Engineered Substrates: sSOI and Beyond

Posted by Eugene A. FITZGERALD (MIT) on July 11, 2006
In Advanced Substrate Corners, ASN #5, Professor's Perspective

The semiconductor industry has entered an exciting phase in which further performance gains (power, speed) are directly connected to materials engineering and the insertion of new materials into the heart of silicon integrated circuits. The rate at which the industry is incorporating strain engineering into production is a direct result of using strained substrate materials …

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Ballistic SOI-MOSFETs: Ultimate High-Speed CMOS Devices Thumbnail

Ballistic SOI-MOSFETs: Ultimate High-Speed CMOS Devices

Posted by Dr. Tomohisa MIZUNO (Kanagawa University) on December 7, 2005
In Advanced Substrate Corners, ASN #3, Professor's Perspective
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The carriers’ ballistic transport is a key issue for realizing future high-speed CMOS devices. At the 2004 VLSI Technology Symposium in Honolulu, we introduced a novel and high-speed SOI-MOSFET and experimentally demonstrated the transconductance enhancement as compared to strained-SOI devices. As shown in the TEM, the source-heterojunction-MOS-transistor (SHOT) induces high-velocity electron injection from the source …

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10 Years – Already?

Posted by Professor Sorin CRISTOLOVEANU (IMEP-LAHC) on July 11, 2005
In Advanced Substrate Corners, ASN #2, Professor's Perspective
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One of the world’s leading SOI experts considers Smart Cut innovations and future potential. I remember a meeting with a PhD student, over ten years ago. He was supposed to work on SIMOX material: at that time, a perfect topic in a perfect SIMOX group with Michel Bruel, André Auberton and Jean-Michel Lamure around. Oddly, …

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