ASN

Archive of Professor’s Perspective

FD-SOI Opportunities in China Thumbnail

FD-SOI Opportunities in China

Posted by on February 5, 2014
In Design & Manufacturing, News & Viewpoints, Professor's Perspective
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Authors: Zhongli Liu, Kai Zhao, Jiajun Luo, Fang Yu, Tianchun Ye (IMECAS) The Chinese IC industry is facing a real opportunity, and Chinese IC developers are looking for points of entry to best leverage this important moment. The CTO of a large Chinese IC supplier is looking for system solutions for their SOC chips, in […]

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SOITEC and UCL boost the RF performance of SOI substrates Thumbnail

SOITEC and UCL boost the RF performance of SOI substrates

Posted by and (Soitec) on December 4, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, Professor's Perspective, R&D/Labnews
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Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]

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Chenming Hu: SOI Can Empower New Transistors to 10nm and beyond Thumbnail

Chenming Hu: SOI Can Empower New Transistors to 10nm and beyond

Posted by (UC Berkeley) on April 23, 2012
In Advanced Substrate Corners, ASN #19, Professor's Perspective
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FinFET and FD-SOI transistors look different but share a common principal that allows MOSFETs to be scalable to 10nm gate length. The good, old MOSFET is nearing its limits. Scaling issues and dopant-induced variations are leading to high leakage (Ioff) and supply voltage (Vdd),  resulting in excessive  power consumption and design costs. While these challenges […]

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Photonics on the Move Thumbnail

Photonics on the Move

Posted by (Rutgers, The State University of New Jersey) on April 26, 2011
In Advanced Substrate Corners, ASN #17, Photonics, Professor's Perspective
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SOI is at the heart of silicon photonics. Here’s an overview of past, present and future trends. The existence of Silicon Photonics owes much to serendipity. During the early years of the development of SOI wafer technology probably nobody anticipated that SOI would be a perfect medium for short distance transmission and modulation of light […]

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Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT) Thumbnail

Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT)

Posted by (Peking University) on December 8, 2010
In Advanced Substrate Corners, ASN #16, Professor's Perspective
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Researchers in academia have partnered with industry to increase understanding of critical issues in advanced non-classical CMOS devices. Highly scaled devices present a new range of challenges with respect to critical issues such as leakage current, short-channel effects, high-field effects, variability, reliability, noise and parasitic impact. Device structure and material innovation are the primary enablers […]

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On the Leading Edge Thumbnail

On the Leading Edge

Posted by (Tyndall) on July 26, 2010
In Advanced Substrate Corners, ASN #15, Professor's Perspective
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Key advances in transistor research start on SOI. SOI has always been the substrate of choice to explore new silicon device concepts and structures. The full dielectric isolation of the silicon allows one to dismiss the sometimes complex junction isolation schemes used in bulk silicon. The possibility of making devices in thin silicon films has […]

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The right choice for 22nm SRAM Thumbnail

The right choice for 22nm SRAM

Posted by and (UC Berkeley) on December 4, 2009
In Advanced Substrate Corners, ASN #14, Professor's Perspective
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What is the best transistor structure to meet SRAM performance and yield requirements at the 22nm node? The semiconductor device research group at UC Berkeley pioneered the FinFET structure in 1998. Now SOI-based FinFETs lead the field of candidate structures to eventually replace the planar bulk MOSFET. In the near term, yield and manufacturability may […]

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A Novel Device for Ultra-Low Power & More Thumbnail

A Novel Device for Ultra-Low Power & More

Posted by (UCLA) on July 30, 2009
In Advanced Substrate Corners, ASN #13, Professor's Perspective
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A leading figure in the research world, Professor Woo and his team are taking an innovative approach to taming the power challenge.

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MEMS in thin film SOI Thumbnail

MEMS in thin film SOI

Posted by (UC Louvain) on May 27, 2009
In Advanced Substrate Corners, ASN #12, Professor's Perspective
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SOI is major contender for heterogeneous applications. The advantages of SOI technology for building thin film sensors on membranes as well as three-dimensional (3D) surface micromachined sensors and actuators have been demonstrated over these last years. The flatness and robustness of the thin membrane as well as the self-assembling of out-of-plane 3D microstructures rely on […]

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Through the Back Gate Thumbnail

Through the Back Gate

Posted by (UC Berkeley) on May 14, 2008
In Advanced Substrate Corners, ASN #9, Professor's Perspective
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Might the Back-Gated FD-SOI MOSFET be the ultimate transistor structure? The fully depleted silicon-on-insulator (FD-SOI) MOSFET structure has been proposed for scaling CMOS technology to sub-45nm nodes. This is because short-channel effects (manifested in increasing off-state leakage with increasing drain bias and with decreasing gate length) are well suppressed in a FD-SOI MOSFET when the […]

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