ASN

Archive of III-V

New Options for GaN RF Thumbnail

New Options for GaN RF

Posted by Jean-Luc LEDYS (Soitec) on December 7, 2005
In Advanced Substrate Corners, ASN #3, III-V
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Smart Cut™ enables innovative substrate solutions GaN HEMT technology holds enormous promise for increasing the power of commercial RF applications. However, challenges both technological and economic remain to be resolved before GaN can realize its full potential beyond the very high-end niche.

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High-Growth GaN Applications Could Get a Boost Thumbnail

High-Growth GaN Applications Could Get a Boost

Posted by Dr. Philippe ROUSSEL (Yole Développement) on July 11, 2005
In Advanced Substrate Corners, ASN #2, III-V
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Replacing epitaxy with bonding could pave the way for 4” substrates. Gallium nitride (GaN) based blue-white HB-LEDs (High-Brightness LEDs) are now at full production level, posting a CAGR of over 51% and targeting markets in automotives, IT, and general lighting.

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GaN On the Move Thumbnail

GaN On the Move

Posted on April 18, 2005
In Advanced Substrate Corners, ASN #1, III-V
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• High Growth Projected for GaN According to a recent report in “SST” magazine, the Silicon Valley-based market research firm Strategies Unlimited is projecting substantial growth for the gallium nitride (GaN) market. Worth $3.2 billion in 2004, the market is expected to increase to $7.2 billion over the next five years, making it one of …

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