ASN

Archive of III-V

GaN’s Bright Future Thumbnail

GaN’s Bright Future

Posted by (Imec) on December 8, 2010
In Advanced Substrate Corners, ASN #16, III-V
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GaN-on-Si is moving towards becoming a cost-effective enabler for next-generation LED and power devices. During the past decade gallium nitride (GaN) has become an important compound semiconductor as it enables numerous key applications in optoelectronics and in power electronics. GaN LED technology could well be the Holy Grail in terms of providing the next generation […]

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Closing the Rectifier Gap Thumbnail

Closing the Rectifier Gap

Posted by (STMicroelectronics) on December 3, 2008
In Advanced Substrate Corners, ASN #11, III-V
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The G2REC project leader explains the role GaN can play in solving a major energy efficiency challenge. Under the aegis of the €30 million European G2REC (Grand Gap Rectifier) project, Jean-Baptiste Quoirin of STMicroelectronics, is leading a consortium of companies and labs tackling the problem of rectifiers for things like computer server power supplies and […]

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Industry’s First InP-based HBT on Silicon Thumbnail

Industry’s First InP-based HBT on Silicon

Posted by (Raytheon RF Components) on July 16, 2008
In Advanced Substrate Corners, ASN #10, III-V
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Advanced engineered substrates are a key to the Raytheon-led DARPA COSMOS project to integrate compound semiconductors and silicon CMOS on a single chip. In what we believe to be an industry first, a Raytheon Company-led team has demonstrated the industry’s first Indium Phosphide (InP)-based heterojunction bipolar transistor (HBT) fabricated on a silicon wafer. HBTs are […]

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GaN for High-Power RF Thumbnail

GaN for High-Power RF

Posted by (United Monolithic Semiconductors) on May 14, 2008
In Advanced Substrate Corners, III-V
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UMS, which is jointly owned by Thales and EADS, is moving forward on GaN for some key applications. United Monolithic Semiconductors (UMS) is a leader in the design, manufacturing and marketing of advanced semiconductor technology for a number of specialized application areas. The company sees advantages in moving from GaAs to GaN for some of […]

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A GaN Approach to Schottky Diodes Thumbnail

A GaN Approach to Schottky Diodes

Posted by (Soitec) on October 31, 2007
In Advanced Substrate Corners, ASN #8, III-V
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The G²REC program aims to create a new generation of energy-efficient power devices for high-volume applications over 250V. The greater electronics industry has an urgent need for fast-switching, high-voltage, energy-efficient and cost-competitive rectifiers. Rectifiers (which convert AC to DC) are comprised of diodes, components that ensure electricity flows in just one direction. For certain high-volume […]

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Picogiga Sampling First Compound Substrate Optimized for GaN Devices Thumbnail

Picogiga Sampling First Compound Substrate Optimized for GaN Devices

Posted by (Soitec) on May 11, 2007
In Advanced Substrate Corners, ASN #7, III-V
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Jean-Luc Ledys explains how SopSiC can solve the GaN substrate dilemma. Picogiga International, a division of the Soitec Group recently announced pre-production availability of SopSiC, a Smart Cut™ engineered substrate for gallium nitride (GaN) based power-switching and high-frequency devices. Customer response has been very positive.

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Composite Substrates Promise Boost for GaN RF Thumbnail

Composite Substrates Promise Boost for GaN RF

Posted by (Soitec) on December 6, 2006
In Advanced Substrate Corners, ASN #6, III-V
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Results of the HYPHEN project indicate a new path to high-volume, high-power, and high-frequency wireless applications. The European HYPHEN GaN-RF project is developing and evaluating new types of composite substrates based on silicon and silicon carbide materials. These new substrates are designed to provide cost-efficient solutions for advanced high-power devices used in wireless communication systems […]

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KORRIGAN Initiative Federates European GaN Efforts Thumbnail

KORRIGAN Initiative Federates European GaN Efforts

Posted by , , and (French Defense Procurement Agency) on July 11, 2006
In Advanced Substrate Corners, III-V
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Systems houses and research labs from seven European nations are working together on GaN HEMT technology for critical defense applications.   Defense radar and communication systems as well as wireless communication systems have a drastic need for increased RF performance and high-power, high-efficiency, high-linearity and low-cost monolithic amplifiers operating in the 1–40 GHz frequency range.

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Innovative Substrate Opportunities in GaN RF-Defense Applications

Posted by (Soitec) on July 11, 2006
In Advanced Substrate Corners, ASN #5, III-V
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The KORRIGAN program will provide a forum for suppliers and system houses to confirm new approaches. KORRIGAN is a very important program in terms of GaN material and device development, giving suppliers the opportunity to demonstrate technology and products to European defense companies. This complements cooperation and business relations with Asian or US based customers […]

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Innovation Accompanies Steady Growth In Power Devices Thumbnail

Innovation Accompanies Steady Growth In Power Devices

Posted by (Yole Développement) on April 6, 2006
In Advanced Substrate Corners, ASN #4, III-V
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The power devices market may be small, but it has a strong tradition of pioneering important advanced technologies. Within the microelectronics world, the power devices industry stands apart. There are very few standards, and overall it represents only about 10% of the mainstream semiconductor business. Applications cover a broad range, including industrial, automotive, traction motors […]

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