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Industry Buzz

INDUSTRY BUZZ

  • February 12, 2016 - Peregrine Semiconductor’s new 75-ohm glitch-less RF digital step attenuator, the UltraCMOS® PE4314, is ideal for wired broadband applications. - RF-SOI pioneer Peregrine Semiconductor has announced theUltraCMOS® PE4314, a 75-ohm glitch-less RF digital step attenuator (DSA). This new DSA extends Peregrine’s existing glitch-less DSA portfolio to 75 ohms. The PE4314 is ideal for... Read more »
  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »
  • December 23, 2015 - Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor's RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are... Read more »
  • December 22, 2015 - Peregrine Semiconductor’s new UltraCMOS® PE44820 is an 8-bit digital phase shifter that delivers exceptional phase accuracy and high linearity for active antenna applications. - RF-SOI pioneer Peregrine Semiconductor has introduced the UltraCMOS® PE44820, an 8-bit digital phase shifter designed for active antenna apps, covering a 358.6-degree phase range. (Read the press release... Read more »
  • December 19, 2015 - Soitec CEO Paul Boudre - VLSI Research Chip Insider has named Soitec CEO Paul Boudre to its roster of 2015 All Stars of the Semiconductor Industry. (See the announcement here.) - Boudre was cited for “...successfully re-organizing Soitec back to its core business as a leading innovative engineered substrate supplier. His first year results are already astounding, with very high growth... Read more »
  • December 17, 2015 - The IEEE S3S (SOI/3D/SubVt) has issued its call for papers for the 2016 conference (click here for details). The theme of the conference, which will take place October 10th – 13th in San Francisco, is "Energy Efficient Technology for the Internet of Things". This industry-wide event gathers together widely known experts, contributed papers and invited talks focused on SOI Technology,... Read more »
  • December 8, 2015 - Citing strong RF-SOI demand, TowerJazz has signed an agreement to purchase Maxim’s 8-inch fab in San Antonio, Texas (shown here). - With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in... Read more »
  • December 8, 2015 - CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si... Read more »
  • November 30, 2015 - Toshiba has announced TaRF8, the next generation in the company's TarfSOI™ (aka Toshiba advanced RF SOI) process, which is optimized for RF switch apps. The first product to use the technology is Toshiba's new SP12T, enabling the lowest-class of insertion loss in the industry. Lowering insertion loss is recognized as particularly important in decreasing RF transmission power loss,... Read more »
  • November 30, 2015 - A recent NewElectronics article entitled ST’s FD-SOI transistor is set to give analogue designers a new knob to tune parameters, explores the many reasons that FD-SOI makes designers happy – even the analog folks. Editor Graham Pitcher talked to analog designer Andreia Cathelin, a senior member of STMicroelectronics’ technical staff. Among plenty of other things, she noted that... Read more »
  • November 27, 2015 - Cadence has announced that its digital and signoff tools are now enabled for the current version of the GLOBALFOUNDRIES® 22FDX™ platform reference flow (see press release here). GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of software-controlled body bias to manage power, performance and leakage needed to create... Read more »
  • November 27, 2015 - The 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee invites active... Read more »
  • November 23, 2015 - Synopsys has announced a comprehensive RTL-to-GDSII solution for GlobalFoundries 22nm technology process. The implementation and signoff tools from the Synopsys Galaxy™ Design Platform have been enabled for the current version of GF's' 22FDX™ platform reference flow. GF has qualified these tools to use body bias to manage power, performance and leakage to achieve optimal energy... Read more »
  • November 23, 2015 - ATopTech, a leader in next-generation physical design solutions, has announced that their Aprisa™ and Apogee™ Place & Route tools are now enabled for the current version of the GlobalFoundries 22FDX™ platform reference flow. GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of using body bias to manage power, performance... Read more »

Latest posts
SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications Thumbnail

SOI-3D-SubVt (S3S): three central technologies for tomorrow’s mainstream applications

Posted by and on November 3, 2014
In Conferences
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ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. […]

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Is China Interested in FD-SOI? You bet. Thumbnail

Is China Interested in FD-SOI? You bet.

Posted by on October 28, 2014
In Conferences, Editor's Blog, In & Around Our Industry
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At the recent FD-SOI Forum in Shanghai, the IoT (Internet of Things) was the #1 topic in all the presentations. The event was sponsored by the SOI Consortium, the Shanghai Institute of Microsystem and Information Technology / Chinese Academy of Sciences (SIMIT/CAS), and VeriSilicon. By all accounts it was a great success. Speakers included experts […]

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FD-SOI Front and Center at Very Successful Semicon Europa Thumbnail

FD-SOI Front and Center at Very Successful Semicon Europa

Posted by on October 17, 2014
In Conferences, Editor's Blog
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Yes, GlobalFoundries is hot on FD-SOI. Yes, Qualcomm’s interested in it for IoT. Yes, ST’s got more amazing low-power FD-SOI results. These are just some of the highlights that came out of the Low Power Conference during Semicon Europa in Grenoble, France (7-9 October 2014). This was Semicon Europa’s first time in Grenoble, the heart […]

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Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more Thumbnail

Semicon Europa ’14 (Grenoble, 7-9 October) Includes Top Speakers at Conferences on Low Power, 3DI, Power Electronics & more

Posted by on September 26, 2014
In Conferences, Editor's Blog
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  For the first time ever, Semicon Europa will be held in Grenoble this year, and FD-SOI will be a major part of it (website link here). With more than 5000 visitors and 350 exhibitors, Semicon Europa is the greatest annual event for the European microelectronics industry. And Grenoble can fairly be considered the epicenter of […]

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Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct) Thumbnail

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)

Posted by on September 17, 2014
In Conferences, R&D/Labnews
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(For best rates, register by September 18th.) The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco. Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S […]

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