ASN
Industry Buzz

INDUSTRY BUZZ

  • July 18, 2014 - Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE... Read more »
  • July 15, 2014 - ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore's Law, and finishes with info on power efficiency, memories, analog and high-speed... Read more »
  • July 15, 2014 - An excellent article highlighting Leti's work on monolithic 3D was recently published in the IEEE's Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they've worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel... Read more »
  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »
  • June 8, 2014 - (Courtesy: SiTime) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics... Read more »
  • June 8, 2014 - Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company's sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI... Read more »
  • May 28, 2014 - In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI... Read more »
  • May 28, 2014 - Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and... Read more »
  • May 28, 2014 - Soitec and Simgui (Shanghai, China) are partnering on SOI wafer production for RF and power applications. The newly signed deal (read press release here) includes a licensing and technology transfer agreement. Simgui will establish a high-volume SOI manufacturing line using Soitec’s proprietary Smart Cut™ technology to directly supply the Chinese market. In addition, Simgui will... Read more »
  • May 19, 2014 - Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories we will cover this month, if not this year, absolutely.”... Read more »
  • May 19, 2014 - The FD-SOI announcement by Samsung and ST represents a tipping point for FD-SOI deployment and for Soitec’s electronics business in the next decade (see Soitec press release here), says the company whose substrate technology makes it all possible. Soitec is the world leader in SOI wafer manufacturing. This announcement validates Soitec’s early strategic technology choice to develop... Read more »
  • May 19, 2014 - Cadence has announcedthe immediate availability of two intellectual property (IP) solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics. (See Cadence press release here.) On this new process node, the Cadence® Denali™ DDR4 IP supports up to 2667Mbps performance,... Read more »
  • May 7, 2014 - A Soitec white paper entitled Innovative RF-SOI Wafers for Wireless Applications is now available on the weSRCH website (see paper here). The paper explains the value of using RF-SOI substrates, and what the latest generation of Soitec’s WaveSOI™ and eSI™ wafers brings to RF IC performance. It also explains how these substrates simplify the IC manufacturing process in order to... Read more »

Latest posts

More than 65% Smartphone RF Switches on SOI, Says Yole; Power Amps Next

Posted by on July 19, 2013
In Editor's Blog
Tagged with , , , , , , , , , , , , ,

The industry research firm Yole Développement says that more than 65 percent of substrates used in fabricating switches for handsets are SOI-based. This is a high-growth part of the market, putting up double-digit increases. Like a standard SOI wafer, an RF SOI substrate has an active (“top”) layer on which CMOS transistors are built, with […]

Continue ReadingLeave a Comment
Ready for FD-SOI, Says World’s Largest Silicon Wafer Company Thumbnail

Ready for FD-SOI, Says World’s Largest Silicon Wafer Company

Posted by on July 11, 2013
In Editor's Blog
Tagged with , , , , , , , , , , ,

The world’s largest maker of silicon wafers, Shin‐Etsu Handotai (SEH) says it’s meeting the specs for FD-SOI wafers, and can quickly expand capacity to meet rising demand. This message was delivered by Nobuhiko Noto of SEH during his presentation at the recent FD-SOI Workshop in Kyoto, Japan. SEH, a $12.7 billion company supplying over 20% […]

Continue ReadingLeave a Comment
GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET Thumbnail

GlobalFoundries On Cost vs. Performance for FD-SOI, Bulk and FinFET

Posted by on July 3, 2013
In Editor's Blog
Tagged with , , , , , , , , , , , , , , , ,

According to Shigeru Shimauchi, Country Manager, GlobalFoundries Japan, for the same level of performance, the die cost for 28nm FD-SOI will be substantially less than for 28nm bulk HPP (“high performance-plus”). Specifically, to get a 30%  increase in performance over 28nm bulk LPS PolySiON, HPP increases die cost by 30%, while FD-SOI only increases die […]

Continue ReadingView Comments (1)
Which will hit the 14nm jackpot first: FD-SOI or FinFET? Gauntlet down. Race on. Thumbnail

Which will hit the 14nm jackpot first: FD-SOI or FinFET? Gauntlet down. Race on.

Posted by on June 21, 2013
In Editor's Blog
Tagged with , , , , , , , , , , , , , , ,

STMicroelectronics CTO Jean-Marc Chery threw down the gauntlet when he told Electronics Weekly, “We must be ready with 14nm FD-SOI before anyone has FinFET at 14nm.” Can they do it? Yes, they can. Unlike FinFETs, Planar FD-SOI is not a disruptive technology – FD-SOI is an extension of the planar CMOS we all know and […]

Continue ReadingView Comments (4)
Fully-Depleted SOI (and more) at VLSI (Kyoto): some knock-your-socks-off papers Thumbnail

Fully-Depleted SOI (and more) at VLSI (Kyoto): some knock-your-socks-off papers

Posted by on June 12, 2013
In Advanced Substrate Corners, Conferences, Editor's Blog, Paperlinks
Tagged with , , , , , , , , , , , , , , , , , , , ,

Look for some breakthrough FD-SOI and other excellent SOI-based papers coming out of the 2013 Symposia on VLSI Technology and Circuits in Kyoto (June 10-14). By way of explanation, VSLI comprises two symposia: one on Technology; one on Circuits. However, papers that are relevant to both are presented in “Jumbo Joint Focus” sessions. Here’s a […]

Continue ReadingView Comments (1)