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Industry Buzz

INDUSTRY BUZZ

  • May 29, 2015 - CEA-Leti, a leading global center for applied research in microelectronics, nanotechnologies and integrated systems, is proudly hosting its 17th LetiDays in Grenoble on June 24–25, 2015, and associated seminars and workshops on June 22nd, 23rd and 26th (click here to go to the registration site). - On June 22-23, Leti will present their first workshop on FD-SOI. This Forum brings... Read more »
  • May 29, 2015 - RF-SOI specialist Peregrine continues to expand its “SOI University” series of webinars (click here to see the full offering), which has been ongoing for five years now. The latest webinar (the fifteenth in the series) is entitled, Linearity: The Key to Successful Data Transmission in Cable & Beyond. It is presented by Peter Bacon, the company's Director of System Integration.... Read more »
  • May 14, 2015 - Cassette carrying several hundred chips intended for 100 Gb/s transceivers, diced from wafers fabricated with IBM SOI-CMOS Integrated Nano-Photonics Technology. The dense monolithic integration of optical and electrical circuits and the scalable manufacturing process provide a cost-effective silicon photonics interconnect solution, suitable for deployment in cloud servers, datacenters,... Read more »
  • May 14, 2015 - International research teams working on or interested in the far-reaching SOIPIX radiation-detector project have a workshop coming up in June. The project was originally started by KEK* scientists to develop a new detector technology and quantum beam imaging for high-energy particle physics. As research teams around the world (including Japan, USA, China and Europe) joined to take... Read more »
  • April 30, 2015 - A recent GlobalFoundries blog entitled RF-SOI is IoT's Future, and the Future is Bright (read it here) says, “RF SOI is a win-win technology option that can improve performance and data speed in smartphones and tablets, and it is expected to play a key role in the Internet of Things applications as well.” - The blog touches on the full range of benefits of RF-SOI for front-end... Read more »
  • April 30, 2015 - Presentations given at the ‘Beyond Computing' Innovative Technologies Symposium (March 2015 in Shanghai) are now available on the SOI Consortium website (click here to see the list). The Symposium covered MEMS, semiconductor manufacturing, RF and power, which are key topics for the fast growing “More than Moore” industry. The one-day, closed-door symposium was organized by members... Read more »
  • April 27, 2015 - RF-SOI will play a key role in the IoT plans of analog and mixed-signal specialist MagnaChip (read the press release here). The company has launched a task force to address IoT. The statement says, “MagnaChip also offers 0.18 micron and plans to offer 0.13 micron Silicon on Insulator (SOI) RF-CMOS technologies, which is suitable for use in antenna switching, tuner and Power Amplifier... Read more »
  • April 27, 2015 - Research and consulting group Semico has issued a new report entitled SOI Update 2015: Finding New Applications (for information on getting a copy of the report, click here). As described on the Semico website: “With the recent growth in RF-SOI for switches and integrated solutions for RF functions such as power amplifiers and transceivers, the opportunities for growth in SOI wafer... Read more »
  • April 21, 2015 - SFARDS' SF3301 cryptocurrency ASIC is the world’s first chip to use 28nm FD-SOI. Surpassing expecttions, it operates at a stunning 0.45V. (Courtesy: SFARDS) - Right on schedule, the SFARDS cryptocurrency ASIC on 28nm FD-SOI has made its debut in silicon, and is surpassing expectations. In what is clearly a stunning success, the company announced that the ASIC’s lowest working... Read more »
  • April 21, 2015 - TEM cross-section of FDSOI transistor (Courtesy of STMicroelectonics) - CEA-Leti’s newest version of its advanced compact model for FD-SOI is now available in all major SPICE simulators (get the press release here). The Leti-UTSOI2.1 is the latest version of Leti’s compact model for FD-SOI, which was first released in 2013. (Compact models of transistors and other elementary devices... Read more »
  • April 9, 2015 - In a new YouTube video, Samsung’s Sr. Director of Foundry Marketing, Kelvin Low, makes a strong case for 28nm FD-SOI, especially for ultra-low-power, IoT, wearables, networking and automotive apps. The five-minute video was taped by ChipEstimate.TV host Sean O’Kane during the Cadence User Conference (CDNLive, Silicon Valley, March 2015 – click here to see it). While the first half... Read more »
  • April 9, 2015 - Hua Hong Semiconductor of Shanghai (a pure-play 200mm foundry operated by HHGrace Semi) recently launched a 0.2μm RF-SOI process design kit (PDK) (click here to read the full press release). The 0.2μm RF-SOI technology platform has been successfully validated and is ready for customers product design and development, says the company. It is tailored and optimized for wireless RF... Read more »
  • March 27, 2015 - The Heterogeneous Technology Alliance (HTA), a coalition of top European R&D organizations, is offering an SOI-MEMS platform. Looking to bridge the gap between academia and industry, this technological platform pools the SOI-MEMS expertise, capabilities and fabrication facilities of Leti (France), Fraunhofer (Germany), CSEM (Switzerland) and VTT (Finland). - The main focus of HTA... Read more »
  • March 27, 2015 - Peregrine Semiconductor teams with Murata to announce the 2015 UltraCMOS® Global 1 Initiative. This new initiative seamlessly integrates the PE56500 all-CMOS RF-SOI front-end solution and Murata filters. - Peregrine Semiconductor and Murata have launched the 2015 UltraCMOS® Global 1 Initiative, which includes the UltraCMOS Global 1 PE56500 and seamlessly integrates Murata filters and... Read more »
  • March 11, 2015 - Cryptocurrency mining hardware company SFARDS is preparing to release its debut miner, which is built on a 28nm FD-SOI ASIC, by April 2015. (You can read the announcement here.) - At the time of this post, tape out of the company’s SF3301ASIC has been announced as complete. Cryptocurrency (the best-known example of which is Bitcoin) depends on “ledgers” supported by bitcoin... Read more »

Latest posts
Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10 Thumbnail

Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10

Posted on April 25, 2014
In Design & Manufacturing, End-User Apps
Tagged with , , , , , , , , , , , , ,

Interview with : Duncan Pilgrim, VP of marketing ASN had a chance to catch up with Duncan Pilgrim, Peregrine Semi’s new VP of Marketing. Here he shares insights into the company’s new reconfigurable RF front end. Duncan Pilgrim is the VP of marketing at Peregrine Semiconductor. A 17-year semiconductor industry veteran, he previously served as VP […]

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Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance Thumbnail

FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance

Posted by and on March 26, 2014
In Design & Manufacturing, News & Viewpoints
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By Bich-Yen Nguyen and Christophe Maleville (Soitec) We are in the era of mobile computing with smart handheld devices and remote data storage “in the cloud,” with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life.  With all the ambitious requirements for better […]

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Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets Thumbnail

Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets

Posted by on March 19, 2014
In Design & Manufacturing, News & Viewpoints
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By Handel Jones IBS has recently issued a new white paper entitled Why Migration to 20nm Bulk CMOS and 16/14nm FinFETs Is Not the Best Approach for the Semiconductor Industry.  The focus of the analysis is on technology options that can be used to give lower cost per gate and lower cost per transistor within […]

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FD-SOI Keeps Moore’s Law on Track Thumbnail

FD-SOI Keeps Moore’s Law on Track

Posted by on February 28, 2014
In Editor's Blog, News & Viewpoints
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Take a look at this graph – it’s obvious, isn’t it? FD-SOI is significantly cheaper, outdoes planar bulk and matches bulk FinFET in the performance/power ratio, and keeps the industry on track with Moore’s Law. This was part of a presentation by ST’s Joël Hartmann (EVP of Manufacturing and Process R&D, Embedded Processing Solutions) during Semi’s […]

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