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Industry Buzz

INDUSTRY BUZZ

  • October 27, 2014 - Peregrine Semi's new RF-SOI based UltraCMOS® PE42722 high-linearity RF switch allows customer premises equipment (CPE) vendors to future proof their devices to meet the strict linearity requirements of the DOCSIS 3.1 Cable Industry Standard (Courtesy: Peregrine Semi) - Peregrine Semi senior marketing manager Kinana Hussain says the company's new RF-SOI PE42722 switch “...is a game... Read more »
  • October 27, 2014 - In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry's accelerating interest in SOI, including FD-SOI and FinFETs on SOI. - He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to Samsung and GF. He quotes GF's Mike Mendicino as... Read more »
  • October 17, 2014 - In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly'sDavid Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. - Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan... Read more »
  • October 17, 2014 - (Courtesy: Sony and Soitec) - SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market. - Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the... Read more »
  • September 26, 2014 - All the presentations made at the SOI Consortium's Shanghai workshops on RF-SOI and FD-SOI are now being posted. - The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. - The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and... Read more »
  • September 26, 2014 - STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). - “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements to IP in the knowledge... Read more »
  • September 17, 2014 - Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums. In his piece When TSMC advocates FD-SOI…, Esteve noted that TSMC's patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on SOI substrates offer... Read more »
  • September 17, 2014 - RF-SOI Pioneer Peregrine has announced new switches for wireless infrastructure and carrier-grade WiFi. The UltraCMOS® PE42442 and PE42452 high-isolation, multi-throw switches address emerging requirements in wireless infrastructure equipment (read press release here). The UltraCMOS® PE42424 RF Switch enables 802.11ac Wi-Fi access points to deliver faster data rates in high-density,... Read more »
  • September 11, 2014 - In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also... Read more »
  • September 11, 2014 - A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI... Read more »
  • September 1, 2014 - An excellent article in SST details Leti's monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D's VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the 'solution for scaling'.”... Read more »
  • September 1, 2014 - Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many wireless markets,... Read more »
  • August 21, 2014 - imec's 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless... Read more »
  • August 21, 2014 - Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “... results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the... Read more »
  • August 8, 2014 - In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation. - “We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that... Read more »

Latest posts
Back-biasing for FD-SOI – a simple way to meet power/performance targets Thumbnail

Back-biasing for FD-SOI – a simple way to meet power/performance targets

Posted by on November 2, 2013
In Design & Manufacturing, Editor's Blog
Tagged with , , , , ,

FD-SOI with back-biasing* (BB – also referred to as body-biasing) is an immensely powerful tool, especially for getting great performance at very low voltages with extremely low leakage. Implemented on a smartphone processor, it’s what would give you that extra day of battery life or get you to 3GHz. But what does it mean for […]

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IP Value Starts at the Substrate Level Thumbnail

IP Value Starts at the Substrate Level

Posted by on October 19, 2013
In News & Viewpoints, SOI In Action
Tagged with , , , , , , , , , , , , , , , , , , , ,

If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can extend right down to the substrate level. Engineered, advanced wafer substrates open new doors for designers. For example, Soitec recently announcement that we are licensing some of our Smart Stacking™ […]

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Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest Thumbnail

Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest

Posted by on October 14, 2013
In Design & Manufacturing, Editor's Blog
Tagged with , , , , , , , , , , , , , , ,

Another RF-SOI solution is making headlines. Leveraging SOI, Toshiba has announced an SP10T RF antenna switch for the smartphone market. The company says it achieves the industry’s lowest insertion loss and smallest size. The company credits its new generation TaRF5 process, the latest in its line of Toshiba-original TarfSOI™ (Toshiba advanced RF SOI) processes. The […]

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Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A  – That’s SOI! Thumbnail

Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A – That’s SOI!

Posted by on September 26, 2013
In Editor's Blog
Tagged with , , , , , , , , , , , , , , ,

Peregrine has announced that the company’s new UltraCMOS antenna switch is driving RF performance in the Samsung Galaxy S4 LTE-A smartphone. UltraCMOS technology is an advanced RF SOI process leveraging bonded silicon-on-sapphire (BSOS) substrates from Soitec. The new dual SP7T Multiswitch in the Samsung leverages Peregrine’s latest version of its UltraCMOS® process technology, STeP8 for RF […]

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SOI – 3D Integration – Subthreshold Microelectronics: Register now for the IEEE S3S! Thumbnail

SOI – 3D Integration – Subthreshold Microelectronics: Register now for the IEEE S3S!

Posted by (ARM) on September 13, 2013
In Conferences
Tagged with , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,

Last May, we already let you know about the IEEE S3S conference, founded upon the co-location of The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. Today, we would like let you know that the advance program is available, and to attract your attention on […]

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