Industry Buzz


  • October 6, 2015 - Slide from Freescales presentation at the 2015 Shanghai FD-SOI Forum. (Courtesy: Freescale) - 28nm FD-SOI is on the Freescale roadmap for two key platforms in the company's flagship i.MX line of embedded application processors: - the i.MX 8 series for advanced graphics and performance, which is based on the ARM v8-A, - and the i.MX 7 power efficiency series, which is based on the ARM... Read more »
  • October 6, 2015 - Using SiTimes' SOI-MEMS based oscillator can extend battery life by a full day in some apps, Piyush Sevalia, Executive Vice President, Marketing for SiTime explained in a recent Planet Analog piece (read the whole thing here). - The traditional timing device is a quartz (passive crystal) resonator, which doesn't draw any power itself. But it doesn't save any either. As Piyush describes:... Read more »
  • October 2, 2015 - In what may be a first for the MEMS industry, CEA-Leti has manufactured micro-accelerometers on 300mm wafers, a development that could lead to significantly lower MEMS manufacturing costs. And yes, those 300mm wafers are SOI wafers. These are “thick” SOI wafers, with an insulating BOx (buried oxide) layer of 2µm, and top silicon of 220nm. - The most advanced of Leti'splatforms is... Read more »
  • October 2, 2015 - A very successful two-day forum on FD-SOI and RF-SOI in Shanghai (September 2015) featured presentations from CEOs, CTOs and VPs at GF, ST, Leti, ARM, Verisilicon, Synapse Design, SITRI, Skyworks, Freescale, TowerJazz, Soitec, Qorvo and many more. Most of the presentations are now available on the SOI Consortium Website, and the rest are expected shortly, so keep checking back. - To... Read more »
  • September 24, 2015 - In an EETimes interview, GlobalFoundries CEO Sanjay Jha said RF-SOI and FD-SOI were “...the right technologies at the right time,” (read the full piece here). He offered the new iPhone 6s as a proofpoint for the value of RF-SOI. For the company's 22nm FD-SOI, he said production tape-out will be “ the second half of 2016”. He sees big opps for FD-SOI with the fabless... Read more »
  • September 24, 2015 - Soitec, the world's SOI wafer leader, announced that the Board of Directors has named André-Jacques Auberton-Hervé as Chairman Emeritus (he founded Soitec together with Jean-Michel Lamure in 1992). - CEO Paul Boudre has been appointed Chairman of Soitec’s Board of Directors. - (Read the press release... Read more »
  • September 10, 2015 - FD-SOI champion STMicroelectronics has unveiled the company's first System-on-Chip (SoC) products on FD-SOI. Two multi-core ARM SoC offerings – both for set-top boxes – have been announced. ST credits the 28nm FD-SOI silicon technology with providing highly-efficient RF and analog integration as well as outstanding power efficiency so that set-top box makers can now design very... Read more »
  • September 10, 2015 - Global specialty foundry TowerJazz and TowerJazz Panasonic Semiconductor Co. (TPSCo), the leading analog foundry in Japan, have announced breakthrough RF-SOI technology for next-generation 4G LTE smartphones and IoT devices. Through a collaborative effort, TowerJazz and its majority owned subsidiary, TPSCo, have developed a new 300mm RF-SOI process that can reduce losses in an RF switch... Read more »
  • July 21, 2015 - In an interview with EETimes, GlobalFoundries CEO Sanjay Jha indicated that more than 50% of the Dresden fab output could be FD-SOI by 2018 (read it here). Jha also told EETimes that More-than-Moore technologies can be considered the mainstream. In the piece entitled, Can GloFo and Europe's chip firms unite? author Peter Clarke makes an excellent point that between the four European... Read more »
  • July 21, 2015 - An IBM paper on a 14nm SOI-FinFET SRAM functional down to 0.3V has garnered press attention. The paper, entitled 14nm FinFET Based Supply Voltage Boosting Techniques for Extreme Low Vmin Operation by R.V. Joshi et al, was presented during the Symposium on VLSI Circuits in Kyoto, Japan in June. According to the abstract, the authors presented a new, “... dynamic supply and interconnect... Read more »
  • July 14, 2015 - RF-SOI champion Peregrine Semiconductor has introduced the industry’s first 300mm RF-SOI technology. Dubbed UltraCMOS® 11, it is built on GlobalFoundries’ 130 nm 300mm RF technology platform (read full press release here). - The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the... Read more »
  • July 14, 2015 - SOI-wafer leader Soitec has appointed Grégoire Duban as Chief Financial Officer. This recruitment supports the ongoing strategic refocusing of the Group’s activities on its core electronics business, as Soitec announced on January 19 (read full press release here). Duban will report directly to Soitec CEO Paul Boudre. - “Grégoire Duban possesses over 18 years’ experience in... Read more »
  • July 6, 2015 - Qorvo recently announced that new high-performance SOI components are landing major wins at cellular base station manufacturers. (Read the press release here.) Ideal for broadband communications systems, the highly integrated components significantly reduce external components while lowering cost, power consumption, and weight in wireless infrastructure, test and measurement, and... Read more »
  • July 6, 2015 - Synopsys recently announce that its IC Compiler II place and route solution was used by STMicroelectronics to tape out a complex 28-nm-FD-SOI SoC. (Read the press release here.) Fast throughput and analysis delivered a 10X reduction in time-to-good-floorplan. A 5X faster implementation with 2X smaller memory footprint enabled breakthrough productivity while exceeding quality of results... Read more »
  • June 12, 2015 - SOI wafer leader Soitec and SITRI (aka Shanghai Industrial µTechnology Research Institute) have announced a collaboration agreement. (Read the press release here.) They say the strategic partnership will strengthen their leadership in high-growth wireless communications and the global market for RF apps, with a special emphasis on the fast-developing Chinese RF ecosystem. - They’ll... Read more »

Latest posts
ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It Thumbnail

ST’s Integrated RF-SOI for Front-End Modules: Why Designers Like It

Posted by on August 21, 2014
In Design & Manufacturing, News & Viewpoints
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RF-SOI is good for more than integrating RF switches.  Other key functions typically found inside RF Front-End Modules (FEM) like power amplifiers (PA), RF Energy Management, low-noise amplifiers (LNA), and passives also benefit from integration. Last year, ST announced a monolithic approach with a new RF-SOI process called H9SOI_FEM that allows the integration of all […]

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FD-SOI: The Best Enabler for Mobile Growth and Innovation Thumbnail

FD-SOI: The Best Enabler for Mobile Growth and Innovation

Posted by on August 8, 2014
In Design & Manufacturing, News & Viewpoints, SOI In Action
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The following in-depth analysis, an IBS study entitled How FD-SOI will Enable Innovation and Growth in Mobile Platform Sales, concludes that the benefits of FD-SOI are overwhelming for mobile platforms through Q4/2017 based on a number of key metrics. In fact, FD-SOI has the ability to support three technology nodes, which can mean a useful […]

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The SOI Papers at VLSI ’14 (Part 2): Thumbnail

The SOI Papers at VLSI ’14 (Part 2):

Posted by on July 17, 2014
In Conferences, Editor's Blog, Paperlinks, R&D/Labnews
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Last week we posted Part 1 of our round-up of SOI papers at the VLSI Symposia – which included the paper showing that 14nm FD-SOI should match the performance of 14nm bulk FinFETs. (If you missed Part 1, covering the three big 14nm FD-SOI and 10nm FinFET papers, click here to read it now.) This […]

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The SOI Papers at VLSI ’14 (Part 1): Breakthroughs in 14nm FD-SOI, 10nm SOI-FinFETs Thumbnail

The SOI Papers at VLSI ’14 (Part 1): Breakthroughs in 14nm FD-SOI, 10nm SOI-FinFETs

Posted by on July 11, 2014
In Conferences, Editor's Blog, Paperlinks, R&D/Labnews
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The VLSI Symposia – one on technology and one on circuits – are among the most influential in the semiconductor industry. Three hugely important papers were presented – one on 14nm FD-SOI and two on 10nm SOI FinFETs – at the most recent symposia in Honolulu (9-13 June 2014). In fact, three out of four […]

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Is FD-SOI Cheaper? Why yes!

Posted by on June 27, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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A debate is raging over at SemiWiki following a post there entitled “Is SOI Really Less Expensive?” by Scotten Jones (you can read it here). Within just over 48 hours, about 30 comments were made, with heavy hitters on both sides of the fence weighing in. While the post itself is about manufacturing economics, the […]

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