FD-SOI – A Look at Recent Consortium Results
Part 3 of 3: 20nm FD-SOI comes out way ahead
Posted by Adele HARS on February 29, 2012In Editor's Blog
Tagged with 20nm, 28nm, ARM, design, FinFET, GlobalFoundries, IBM, power, SOI Consortium FD-SOI, SPICE, STMicroelectronics
The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. The SOI Industry Consortium announcement at the end of the year provided …
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