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Industry Buzz

INDUSTRY BUZZ

  • September 11, 2014 - In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also... Read more »
  • September 11, 2014 - A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI... Read more »
  • September 1, 2014 - An excellent article in SST details Leti's monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D's VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the 'solution for scaling'.”... Read more »
  • September 1, 2014 - Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many wireless markets,... Read more »
  • August 21, 2014 - imec's 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless... Read more »
  • August 21, 2014 - Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “... results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the... Read more »
  • August 8, 2014 - In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation. - “We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that... Read more »
  • August 8, 2014 - Gold Standard Simulations Ltd. (GSS) announced a multimillion dollar contract to license its complete TCAD/EDA tool suite to GlobalFoundries (see press release here). The fully integrated and automated tool chain includes GARAND, the GSS ‘atomistic’ TCAD simulator; Mystic, the GSS statistical compact model extractor; and RandomSpice, the GSS statistical circuit simulator. The GSS... Read more »
  • August 8, 2014 - A new book entitled Silicon-On-Insulator (SOI) Technology, Manufacture and Applications (1st Edition) features contributions by experts at Soitec, GF, TSMC, Leti and more. - Billed as “a complete review of this rapidly growing high-speed, low-power semiconductor technology,” the book covers the entire SOI spectrum, from Moore to More than Moore. It goes into SOI wafer technology,... Read more »
  • July 18, 2014 - Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE... Read more »
  • July 15, 2014 - ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore's Law, and finishes with info on power efficiency, memories, analog and high-speed... Read more »
  • July 15, 2014 - An excellent article highlighting Leti's work on monolithic 3D was recently published in the IEEE's Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they've worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel... Read more »
  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »

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ASN Exclusive Interview: Skyworks on SOI for RF Thumbnail

ASN Exclusive Interview: Skyworks on SOI for RF

Posted by on November 4, 2013
In Editor's Blog
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Skyworks has a growing portfolio of chips on SOI. Kevin Walsh, the company’s Marketing Director of Analog Solutions, tells ASN why. Advanced Substrate News: Can you tell us generally about Skyworks’ vision and position in the market? Kevin Walsh: Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors and one of the world’s […]

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Back-biasing for FD-SOI – a simple way to meet power/performance targets Thumbnail

Back-biasing for FD-SOI – a simple way to meet power/performance targets

Posted by on November 2, 2013
In Design & Manufacturing, Editor's Blog
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FD-SOI with back-biasing* (BB – also referred to as body-biasing) is an immensely powerful tool, especially for getting great performance at very low voltages with extremely low leakage. Implemented on a smartphone processor, it’s what would give you that extra day of battery life or get you to 3GHz. But what does it mean for […]

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IP Value Starts at the Substrate Level Thumbnail

IP Value Starts at the Substrate Level

Posted by on October 19, 2013
In News & Viewpoints, SOI In Action
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If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can extend right down to the substrate level. Engineered, advanced wafer substrates open new doors for designers. For example, Soitec recently announcement that we are licensing some of our Smart Stacking™ […]

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Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest Thumbnail

Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest

Posted by on October 14, 2013
In Design & Manufacturing, Editor's Blog
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Another RF-SOI solution is making headlines. Leveraging SOI, Toshiba has announced an SP10T RF antenna switch for the smartphone market. The company says it achieves the industry’s lowest insertion loss and smallest size. The company credits its new generation TaRF5 process, the latest in its line of Toshiba-original TarfSOI™ (Toshiba advanced RF SOI) processes. The […]

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Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A  – That’s SOI! Thumbnail

Peregrine Semi’s RF Chip On Bonded SOS Is Main Antenna Switch in Samsung Galaxy S4 LTE-A – That’s SOI!

Posted by on September 26, 2013
In Editor's Blog
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Peregrine has announced that the company’s new UltraCMOS antenna switch is driving RF performance in the Samsung Galaxy S4 LTE-A smartphone. UltraCMOS technology is an advanced RF SOI process leveraging bonded silicon-on-sapphire (BSOS) substrates from Soitec. The new dual SP7T Multiswitch in the Samsung leverages Peregrine’s latest version of its UltraCMOS® process technology, STeP8 for RF […]

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