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Industry Buzz

INDUSTRY BUZZ

  • December 9, 2014 - Under a new agreement, Simgui now has the exclusive right to promote, distribute and sell Soitec’s 200-mm SOI wafers in China (see press release in Englishhere; Chinese versionhere). Soitec is the world's leading producer of SOI wafers. Shanghai Simgui Technology Co., Ltd. (Simgui), a Shanghai-based semiconductor materials company, is a spinoff of the Shanghai Institute of Microsystem... Read more »
  • December 8, 2014 - The Orion Lightspeed™ inspection system by Altatech (a division of Soitec) pinpoints the true size and location of nano-scale defects inside compound semiconductor materials and transparent substrates - Two new products from semi equipment manufacturer Altatech: one for ultra-thin film deposition, and one for searching out nano-defects. Altatech is a division of Soitec, best known in... Read more »
  • November 3, 2014 - SOI-MEMS timing device leader SiTime Corporation is being acquired by MegaChips Corporation,a top 25 fabless semiconductor company based in Japan for $200 million in cash. (read the press release here). This transaction combines two complementary fabless semiconductor leaders that provide solutions for the growing Wearables, Mobile and Internet of Things markets. - “MEMS components... Read more »
  • November 3, 2014 - Soitec, a leader in SOI wafers and other advanced substrates, recently announced the sale of its gallium arsenide (GaAs) epitaxy business (the Soitec Specialty Electronics subsidiary) to Intelligent Epitaxy Technology Inc (see press release here). The deal follows the previous collaboration between Soitec and IntelliEPI (see press release dated December 12, 2013). - “The sale of our... Read more »
  • October 27, 2014 - Peregrine Semi's new RF-SOI based UltraCMOS® PE42722 high-linearity RF switch allows customer premises equipment (CPE) vendors to future proof their devices to meet the strict linearity requirements of the DOCSIS 3.1 Cable Industry Standard (Courtesy: Peregrine Semi) - Peregrine Semi senior marketing manager Kinana Hussain says the company's new RF-SOI PE42722 switch “...is a game... Read more »
  • October 27, 2014 - In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry's accelerating interest in SOI, including FD-SOI and FinFETs on SOI. - He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to Samsung and GF. He quotes GF's Mike Mendicino as... Read more »
  • October 17, 2014 - In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly'sDavid Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. - Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan... Read more »
  • October 17, 2014 - (Courtesy: Sony and Soitec) - SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market. - Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the... Read more »
  • September 26, 2014 - All the presentations made at the SOI Consortium's Shanghai workshops on RF-SOI and FD-SOI are now being posted. - The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. - The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and... Read more »
  • September 26, 2014 - STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). - “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements to IP in the knowledge... Read more »
  • September 17, 2014 - Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums. In his piece When TSMC advocates FD-SOI…, Esteve noted that TSMC's patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on SOI substrates offer... Read more »
  • September 17, 2014 - RF-SOI Pioneer Peregrine has announced new switches for wireless infrastructure and carrier-grade WiFi. The UltraCMOS® PE42442 and PE42452 high-isolation, multi-throw switches address emerging requirements in wireless infrastructure equipment (read press release here). The UltraCMOS® PE42424 RF Switch enables 802.11ac Wi-Fi access points to deliver faster data rates in high-density,... Read more »
  • September 11, 2014 - In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also... Read more »
  • September 11, 2014 - A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI... Read more »
  • September 1, 2014 - An excellent article in SST details Leti's monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D's VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the 'solution for scaling'.”... Read more »

Latest posts
Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries Thumbnail

Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries

Posted by and on December 5, 2013
In Design & Manufacturing, In & Around Our Industry
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Soitec has reached high-volume manufacturing of our new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. They are the first ‘trap-rich’ type of material in full production, and are already used in manufacturing by most of the leading RF foundries in front-end modules for 4G and LTE mobile computing and communication applications. […]

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SOITEC and UCL boost the RF performance of SOI substrates Thumbnail

SOITEC and UCL boost the RF performance of SOI substrates

Posted by and (Soitec) on December 4, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, Professor's Perspective, R&D/Labnews
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Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]

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FinFET on SOI: Potential Becomes Reality Thumbnail

FinFET on SOI: Potential Becomes Reality

Posted by on November 26, 2013
In Design & Manufacturing, In & Around Our Industry
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Authors: T. B. Hook, I. Ahsan, A. Kumar, K. McStay, E. Nowak, S. Saroop, C. Schiller, G. Starkey, IBM Semiconductor Research and Development Center We report here empirical results demonstrating the electrical benefits of SOI-based FinFETs. There are benefits inherent in the elimination of dopant as the means to establish the effective device dimensions.  However, […]

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The IEEE S3S Conference Delivered Impressive Technical Content Thumbnail

The IEEE S3S Conference Delivered Impressive Technical Content

Posted by on November 18, 2013
In Conferences
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The new IEEE S3S conference promised rich content, as it merged both The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. The result was an excellent conference, with outstanding presentations from key players in each of the three topics covered. This quality was reflected in the increased attendance: almost 50% more […]

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STM’s Bozotti, Chery Herald FD-SOI & RF-SOI Thumbnail

STM’s Bozotti, Chery Herald FD-SOI & RF-SOI

Posted on November 13, 2013
In News & Viewpoints, SOI In Action
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In STMicroelectronics Q313 Earnings Conference Call,  CEO/President Carlo Bozotti and CMO/CTO Jean-Marc Chery (who’s also EVP and GM of the Embedded Processing Solutions Segment and Vice Chairman of the Corporate Strategic Committee) had excellent things to say about FD-SOI and RF-SOI. Here are some take-aways  from the SeekingAlpha transcript: Carlo Bozotti: “We continue to demonstrate […]

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