Industry Buzz


  • October 6, 2015 - Slide from Freescales presentation at the 2015 Shanghai FD-SOI Forum. (Courtesy: Freescale) - 28nm FD-SOI is on the Freescale roadmap for two key platforms in the company's flagship i.MX line of embedded application processors: - the i.MX 8 series for advanced graphics and performance, which is based on the ARM v8-A, - and the i.MX 7 power efficiency series, which is based on the ARM... Read more »
  • October 6, 2015 - Using SiTimes' SOI-MEMS based oscillator can extend battery life by a full day in some apps, Piyush Sevalia, Executive Vice President, Marketing for SiTime explained in a recent Planet Analog piece (read the whole thing here). - The traditional timing device is a quartz (passive crystal) resonator, which doesn't draw any power itself. But it doesn't save any either. As Piyush describes:... Read more »
  • October 2, 2015 - In what may be a first for the MEMS industry, CEA-Leti has manufactured micro-accelerometers on 300mm wafers, a development that could lead to significantly lower MEMS manufacturing costs. And yes, those 300mm wafers are SOI wafers. These are “thick” SOI wafers, with an insulating BOx (buried oxide) layer of 2µm, and top silicon of 220nm. - The most advanced of Leti'splatforms is... Read more »
  • October 2, 2015 - A very successful two-day forum on FD-SOI and RF-SOI in Shanghai (September 2015) featured presentations from CEOs, CTOs and VPs at GF, ST, Leti, ARM, Verisilicon, Synapse Design, SITRI, Skyworks, Freescale, TowerJazz, Soitec, Qorvo and many more. Most of the presentations are now available on the SOI Consortium Website, and the rest are expected shortly, so keep checking back. - To... Read more »
  • September 24, 2015 - In an EETimes interview, GlobalFoundries CEO Sanjay Jha said RF-SOI and FD-SOI were “...the right technologies at the right time,” (read the full piece here). He offered the new iPhone 6s as a proofpoint for the value of RF-SOI. For the company's 22nm FD-SOI, he said production tape-out will be “ the second half of 2016”. He sees big opps for FD-SOI with the fabless... Read more »
  • September 24, 2015 - Soitec, the world's SOI wafer leader, announced that the Board of Directors has named André-Jacques Auberton-Hervé as Chairman Emeritus (he founded Soitec together with Jean-Michel Lamure in 1992). - CEO Paul Boudre has been appointed Chairman of Soitec’s Board of Directors. - (Read the press release... Read more »
  • September 10, 2015 - FD-SOI champion STMicroelectronics has unveiled the company's first System-on-Chip (SoC) products on FD-SOI. Two multi-core ARM SoC offerings – both for set-top boxes – have been announced. ST credits the 28nm FD-SOI silicon technology with providing highly-efficient RF and analog integration as well as outstanding power efficiency so that set-top box makers can now design very... Read more »
  • September 10, 2015 - Global specialty foundry TowerJazz and TowerJazz Panasonic Semiconductor Co. (TPSCo), the leading analog foundry in Japan, have announced breakthrough RF-SOI technology for next-generation 4G LTE smartphones and IoT devices. Through a collaborative effort, TowerJazz and its majority owned subsidiary, TPSCo, have developed a new 300mm RF-SOI process that can reduce losses in an RF switch... Read more »
  • July 21, 2015 - In an interview with EETimes, GlobalFoundries CEO Sanjay Jha indicated that more than 50% of the Dresden fab output could be FD-SOI by 2018 (read it here). Jha also told EETimes that More-than-Moore technologies can be considered the mainstream. In the piece entitled, Can GloFo and Europe's chip firms unite? author Peter Clarke makes an excellent point that between the four European... Read more »
  • July 21, 2015 - An IBM paper on a 14nm SOI-FinFET SRAM functional down to 0.3V has garnered press attention. The paper, entitled 14nm FinFET Based Supply Voltage Boosting Techniques for Extreme Low Vmin Operation by R.V. Joshi et al, was presented during the Symposium on VLSI Circuits in Kyoto, Japan in June. According to the abstract, the authors presented a new, “... dynamic supply and interconnect... Read more »
  • July 14, 2015 - RF-SOI champion Peregrine Semiconductor has introduced the industry’s first 300mm RF-SOI technology. Dubbed UltraCMOS® 11, it is built on GlobalFoundries’ 130 nm 300mm RF technology platform (read full press release here). - The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the... Read more »
  • July 14, 2015 - SOI-wafer leader Soitec has appointed Grégoire Duban as Chief Financial Officer. This recruitment supports the ongoing strategic refocusing of the Group’s activities on its core electronics business, as Soitec announced on January 19 (read full press release here). Duban will report directly to Soitec CEO Paul Boudre. - “Grégoire Duban possesses over 18 years’ experience in... Read more »
  • July 6, 2015 - Qorvo recently announced that new high-performance SOI components are landing major wins at cellular base station manufacturers. (Read the press release here.) Ideal for broadband communications systems, the highly integrated components significantly reduce external components while lowering cost, power consumption, and weight in wireless infrastructure, test and measurement, and... Read more »
  • July 6, 2015 - Synopsys recently announce that its IC Compiler II place and route solution was used by STMicroelectronics to tape out a complex 28-nm-FD-SOI SoC. (Read the press release here.) Fast throughput and analysis delivered a 10X reduction in time-to-good-floorplan. A 5X faster implementation with 2X smaller memory footprint enabled breakthrough productivity while exceeding quality of results... Read more »
  • June 12, 2015 - SOI wafer leader Soitec and SITRI (aka Shanghai Industrial µTechnology Research Institute) have announced a collaboration agreement. (Read the press release here.) They say the strategic partnership will strengthen their leadership in high-growth wireless communications and the global market for RF apps, with a special emphasis on the fast-developing Chinese RF ecosystem. - They’ll... Read more »

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AMD Names Soitec as Best Wafer Fab Materials Supplier Thumbnail

AMD Names Soitec as Best Wafer Fab Materials Supplier

Posted on December 6, 2006
In ASN #6, In & Around Our Industry, People
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World Class Supplier Pathfinder Award recognizes support and commitment. AMD presented its annual WCS Pathfinder Award for Best Wafer Fab Materials Supplier to Soitec during a recent awards banquet in Dresden, Germany, home to AMD’s Fab 30 and AMD Fab 36 manufacturing facilities.

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Simon Deleonibus Recognized as IEEE Fellow Thumbnail

Simon Deleonibus Recognized as IEEE Fellow

Posted on December 6, 2006
In ASN #6, In & Around Our Industry, People
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Leti lab director and inventor of the principle of contact plugs now leveraging advanced substrates. In further recognition of his distinguished career, Dr. Simon Deleonibus, Director of Leti’s Electronic Nanodevices Laboratory, was recently awarded the grade of IEEE Fellow “for contributions to nanoscaled CMOS devices technology”. This follows on other recent awards including the Grand […]

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Chartered’s SOI Success Story Thumbnail

Chartered’s SOI Success Story

Posted by (GlobalFoundries) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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Chartered is the industry’s first pure-play foundry to expand into high-volume SOI production. High-volume SOI at Chartered Semiconductor Manufacturing is a great success. January 2007 marks the three-year anniversary of the initial announcement that we would manufacture 90nm SOI products for IBM in volume-driven, high-performance solutions. Since we ramped production in mid-2005, we have shipped […]

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Composite Substrates Promise Boost for GaN RF Thumbnail

Composite Substrates Promise Boost for GaN RF

Posted by (Soitec) on December 6, 2006
In Advanced Substrate Corners, ASN #6, III-V
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Results of the HYPHEN project indicate a new path to high-volume, high-power, and high-frequency wireless applications. The European HYPHEN GaN-RF project is developing and evaluating new types of composite substrates based on silicon and silicon carbide materials. These new substrates are designed to provide cost-efficient solutions for advanced high-power devices used in wireless communication systems […]

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Micragem™ – An SOI-based MEMS Process Platform Thumbnail

Micragem™ – An SOI-based MEMS Process Platform

Posted by (Micralyne) on December 6, 2006
In ASN #6, In & Around Our Industry, MEMS
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Micralyne’s robust, standardized fabrication process reduces time-to-market. One key issue companies face is time-to-market — how long it takes to move a MEMS-based product from an idea to generating revenues. Micragem™ is an SOI-based MEMS fabrication process with a set of design and process guidelines used to prototype and manufacture different types of MEMS components […]

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