Industry Buzz


  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »
  • June 8, 2014 - (Courtesy: SiTime) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics... Read more »
  • June 8, 2014 - Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company's sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI... Read more »
  • May 28, 2014 - In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI... Read more »
  • May 28, 2014 - Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and... Read more »
  • May 28, 2014 - Soitec and Simgui (Shanghai, China) are partnering on SOI wafer production for RF and power applications. The newly signed deal (read press release here) includes a licensing and technology transfer agreement. Simgui will establish a high-volume SOI manufacturing line using Soitec’s proprietary Smart Cut™ technology to directly supply the Chinese market. In addition, Simgui will... Read more »
  • May 19, 2014 - Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories we will cover this month, if not this year, absolutely.”... Read more »
  • May 19, 2014 - The FD-SOI announcement by Samsung and ST represents a tipping point for FD-SOI deployment and for Soitec’s electronics business in the next decade (see Soitec press release here), says the company whose substrate technology makes it all possible. Soitec is the world leader in SOI wafer manufacturing. This announcement validates Soitec’s early strategic technology choice to develop... Read more »
  • May 19, 2014 - Cadence has announcedthe immediate availability of two intellectual property (IP) solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics. (See Cadence press release here.) On this new process node, the Cadence® Denali™ DDR4 IP supports up to 2667Mbps performance,... Read more »
  • May 7, 2014 - A Soitec white paper entitled Innovative RF-SOI Wafers for Wireless Applications is now available on the weSRCH website (see paper here). The paper explains the value of using RF-SOI substrates, and what the latest generation of Soitec’s WaveSOI™ and eSI™ wafers brings to RF IC performance. It also explains how these substrates simplify the IC manufacturing process in order to... Read more »
  • May 7, 2014 - Kalray is considering an FD-SOI version of its family of programmable multicore processors, reports Peter Clarke of Electronics360 (see article here). Clarke says that Kalray’s director of solutions and software services told him that while they’re currently on 28nm bulk, they’ve had customer interest in an FD-SOI version of a planned 64-core chip for telecom, automotive and... Read more »
  • May 7, 2014 - Fraunhofer scientists have developed a new type of high-temperature SOI-based process for making extremely compact chips that withstand temperatures of up to 300 degrees Celsius (press release here). At a characteristic dimension of 0.35 µm, they are considerably smaller than the high-temperature chips available today, they say. Targets include oil production and geothermal power... Read more »
  • April 30, 2014 - 100K views and counting: FD-SOI-related posts on SemiWiki are fabulously popular. Following a wrap-up by Paul McLellen of his FD-SOI talk at EDPS (read post here), heated discussion ensued in the comments section. To show just how hot a topic FD-SOI is in the design community, SemiWiki co-founder Dan Nenni shared the following stats: - 100,000 FD-SOI article views on SemiWiki - Top... Read more »

Latest posts
Opening the Route for Wireless SOI Systems-On-Chip Thumbnail

Opening the Route for Wireless SOI Systems-On-Chip

Posted by (Cissoid) on April 6, 2006
In ASN #4, Design & Manufacturing, In & Around Our Industry
Tagged with , , , ,

Optimization of RF circuits for high-resistivity SOI substrates facilitates multi-mode, multi-standard terminals integration. The new generations of multi-mode, multistandards terminals increase the need to integrate digital, analog and RF functions on the same substrates using a System-on- Chip (SoC) approach. Silicon-on-Insulator (SOI), which can use high-resistivity (HR) wafers ( > 1000 for the mechanical, […]

Continue ReadingLeave a Comment

Pertinent reading for the SOI and advanced substrates communities.

Posted on April 6, 2006
In ASN #4, Paperlinks
Tagged with

Nanometer-scale SOI membranes are conductive A paper published in the journal Nature (439, 703-706, 9 February 2006) by researchers at U. Wisconsin-Madison and Soitec showed that the active silicon layer on an SOI wafer retains its conductive properties in vacuum, regardless of how thin it gets. Surface cleanliness turns out to be bigger factor than […]

Continue ReadingLeave a Comment
CELLs Multiply Thumbnail

CELLs Multiply

Posted on December 7, 2005
In ASN #3, End-User Apps, SOI In Action
Tagged with , , , , , ,

IBM, Sony/SCEI and Toshiba are actively encouraging the proliferation of CELL applications   The most celebrated of Cell applications, Sony’s PlayStation® 3, is due out next spring. In the meantime, the SOI-based Cell Broadband Engine (CBE) microprocessor, as it is officially known, is getting a big push from its joint developers: Sony Computer Entertainment, Inc. […]

Continue ReadingLeave a Comment
SOI in Japan: Full Circle Thumbnail

SOI in Japan: Full Circle

Posted on December 7, 2005
In ASN #3, End-User Apps, SOI In Action
Tagged with ,

SOI got its start in Japan. Now in a raft of new applications, its home again   Japan’s NTT launched the worldwide SOI revolution 27 years ago when it developed the SIMOX (Separation by IMplanted OXygen) process, and gave the first demonstration of an SOI device. Then, with the advent of wafer bonding and Smart […]

Continue ReadingLeave a Comment
Xbox® 360 Debuts New Gaming Generation Thumbnail

Xbox® 360 Debuts New Gaming Generation

Posted on December 7, 2005
In ASN #3, End-User Apps, SOI In Action
Tagged with , , , ,

Microsoft’s custom PowerPC chip by IBM is based on SOI   Microsoft’s Xbox 360, which is expected to fly out of the stores this holiday season, has some very impressive figures to cite. The three-core PowerPC-based CPU, custom-made for Microsoft by IBM, boasts one teraflop of floating-point performance.

Continue ReadingLeave a Comment