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Industry Buzz

INDUSTRY BUZZ

  • August 15, 2016 - Samsung is adding two embedded NVM (non-volatile memory) options to its 28nm FD-SOI line-up, Kelvin Low told EETimes' Peter Clark in a recent interview (read the whole piece here). - Low, who heads up marketing and bizdev for Samsung Foundry, indicated the following roll-out for 28nm FD-SOI: - eFlash – risk production by the end of 2017; volume in 2018 - eMRAM (SST-MRAM) – risk... Read more »
  • May 31, 2016 - FD-SOI is the default choice for digital in ST's automotive and discrete group (ADG), Marco Monti, EVP of the business unit told EETimes' Peter Clarke in a recent article (read it here). The next generation of ST's most advanced microcontrollers (currently on 40nm bulk) will be on 28nm FD-SOI, he said. Monti also gave examples of other FD-SOI automotive chips ST is doing for partners,... Read more »
  • May 27, 2016 - “We intend to focus all new engagements in design using 28nm FD-SOI,” Samsung Semi’s Kelvin Low told SemiEngineering’s Mark Lapedus in a recent article (read it here). - Low, who’s senior directory of the company’s foundry marketing says they’ll of course continue to support existing 28nm bulk customers, “But we think FD-SOI has enough benefits to attract new customers... Read more »
  • May 11, 2016 - FD-SOI will be featured in the upcoming Symposia on VLSI Technology & Circuits (Honolulu, Hawaii from June 13-17, 2016 – click here for more info). The theme of the conference is “Inflections for a Smart Society,” and luminaries from throughout the SOI ecosystem will be featured in presentations, short courses and panel discussions. - A short course entitle “Circuit Design... Read more »
  • April 29, 2016 - From RF-SOI pioneer Peregrine Semi comes a steady stream of new chips and design wins. - News include: - Two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140 (press release here). These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization. Designed for the LTE and LTE-A... Read more »
  • April 25, 2016 - Registration is open for GlobalFoundries' technical webinar, “How to Implement an ARM Cortex-A17 Processor in 22FDX 22nm FD-SOI Technology” (click here to go to the registration page). The webinar will cover the optimal steps to successfully implement ARM® Cortex®-A Series* processors using 22FDXTM 22nm FD-SOI technology. - GF Design Enablement Fellow Dr. Joerg Winkler will... Read more »
  • April 7, 2016 - GlobalFoundries recently announced availability of a new set of RF-SOI PDKs for the company's 7SW SOI technology. GF, which has now delivered more than 20 billion RF-SOI chips for the world’s smartphones, tablets and more, notes that its 7SW SOI technology is optimized for multi-band RF switching in next-generation smartphones. It is also poised to drive innovation in IoT... Read more »
  • April 5, 2016 - Three of the world's More-than-Moore and SOI technology development powerhouses have signed a comprehensive agreement for ongoing collaboration and cooperation in developing new technologies for the emerging IoT market. SITRI of Shanghai, and CEA-Leti and Minatec of Grenoble will work together to accelerate the adoption of their latest technologies and create a global innovation... Read more »
  • March 31, 2016 - Coupling Wave Solutions (CWS) has a new productivity tool called SiPEX, which enables RF-SOI designers to increase the number of design iterations—including Spice simulation—up to 10 times in the same time frame. - “With SiPEX, RF switch designers will be able to make their design changes in less than 15 minutes and obtain a few decibels (dB) of variation over silicon measurements... Read more »
  • March 23, 2016 - Don't forget to get your paper submitted to the top conference with a major focus on the SOI ecosystem: the IEEE S3S (SOI/3D/SubVt). The Call For Papers (CFP) deadline is April 15, 2016. As we noted for you in ASN back in December, the theme of the conference, which will take place October 10th – 13th in San Francisco, is “Energy Efficient Technology for the Internet of Things”. -... Read more »
  • March 18, 2016 - EDI CON China 2016, taking place April 19-21 in Beijing at the China National Convention Center (CNCC) will feature a keynote talk by GlobalFoundries' Peter Rabbeni, Sr. Director, RF BU Business Development & Product Marketing. The talk, entitled, "RF SOI: Revolutionizing Radio Design Today and Driving Innovation for Tomorrow",will kick off the newly added RF-SOI Technology Track.... Read more »
  • February 12, 2016 - Peregrine Semiconductor’s new 75-ohm glitch-less RF digital step attenuator, the UltraCMOS® PE4314, is ideal for wired broadband applications. - RF-SOI pioneer Peregrine Semiconductor has announced theUltraCMOS® PE4314, a 75-ohm glitch-less RF digital step attenuator (DSA). This new DSA extends Peregrine’s existing glitch-less DSA portfolio to 75 ohms. The PE4314 is ideal for... Read more »
  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »
  • December 23, 2015 - Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor's RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are... Read more »

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ISi and its Z-RAM® memory technology are gaining accolades across the industry. Innovative Silicon (ISi), the developer of Z-RAM® ultra-dense memory intellectual property (IP), is on an awards roll. The company recently announced that IEEE Spectrum Magazine readers named Z-RAM the number one winning technology in its “Winners and Losers” edition. Over 50 percent of […]

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Industry-academia partnership focuses on the wafer. Soitec USA Chief Scientist Dr. George K. Celler has been named co-chairman of the SiWEDS Industrial Advisory Board (IAB). SiWEDS, which stands for Silicon Wafer Engineering and Defect Science, is a global silicon partnership for research, development and education, co-sponsored by the U.S. National Science Foundation (NSF).

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Posted on May 11, 2007
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Posted on May 11, 2007
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Eight key industrial players in nanoelectronics have created the legal entity for partnering with the EC’s €3 billion Joint Technology Initiative. With the legalities now in place, the greater nanoelectronics community is set to play a significant role in defining the future of nanoelectronics R&D in Europe.

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