Industry Buzz


  • February 23, 2015 - SureCore's ultra-low power SRAM technology on 28nm FD-SOI saves 70% in read/write power and reduces leakage by 30% compared to 40nm bulk implementations, writes SemiconductorEngineering Editor-In-Chief Ed Sperling (read the article here). Hitting the sweet spot for mobile, IoT and wearables, SureCore recently raised $1.6 million in... Read more »
  • February 23, 2015 - SiTime's SOI-MEMS solution is a key part of a new realtime health and fitness tracking solution from MegaChips called “frizz”. MegaChips has announced a partnership with Bosch Sensortec to provide a complete reference design for use of frizz in smartphones, wearables and other personal devices allowing consumers to monitor their activities in real time (read the press release here).... Read more »
  • February 17, 2015 - A recent post by Eric Esteve on SemiWiki, entitled Sony Endorses FD-SOI to Attack Wearable & IoT (click here to read it) delves into some of the technical and design details of Sony's Tokyo presentation on a 1mW 28nm FD-SOI GPS. (The full presentation is available here. Or click here to read the ASN overview of all the Tokyo presentations.) For the design community, IP expert Esteve... Read more »
  • February 17, 2015 - ARM is working on FD-SOI libraries, and the ecosystem is now there, says David Manners of Electronics Weekly. In two separate pieces, he cited conversations with ARM EVP Pete Hutton. In Microcontrollers Become Major at ARM (click here to read it), Hutton confirmed both the FD-SOI libraries and customers. In Cinderella (click here to read it), Manners looked at all the FD-SOI pieces –... Read more »
  • February 9, 2015 - SemiWiki blogger Paul McLellan has posted another excellent FD-SOI piece, this time covering Samsung's presentation at the recent FD-SOI/RF-SOI Workshop in Tokyo (click here to read it). Within 24 hours of posting, it had already been shared over 60 times on LinkedIn. As always, McLellan puts the presentation in perspective for the design community, calling out key... Read more »
  • February 9, 2015 - (Courtesy: ST, designreuse) - A video made during ST's FD-SOI presentation at IP-SoC 2014 has now been posted by designreuse on YouTube (you can see it here). Over 40 minutes long, it details the European THINGS2DO project, which includes almost 50 partners working on the FD-SOI ecosystem. (This follows onto the PLACES2BE project, which is finishing up this year.) It underscores the... Read more »
  • February 8, 2015 - In a SemiEngineering piece entitled FD-SOI meets the IoT, Executive Editor Ann Steffora Mutschler talked to a couple of design houses working on FD-SOI IoT projects. Synapse Design has taped out multiple chips, and has more projects underway, they told her, with reports of impressive power savings. In close collaboration with a foundry, OpenSilicon is working on an FD-SOI test chip that... Read more »
  • February 8, 2015 - (Courtesy: Peregrine Semiconductor) - Peregrine Semiconductor has unveiled the UltraCMOS® PE42524, the industry's first RF-SOI switch to operate up to 40 GHz (click here for product details, and here for the press release). This switch significantly extends Peregrine's high-frequency portfolio into frequencies previously dominated by gallium arsenide (GaAs) technology. “Our UltraCMOS... Read more »
  • February 2, 2015 - A new EETimes article entitled Sony Joins FD-SOI Club by Chief International Correspondent Junko Yoshida has created a tremendous buzz (click here to read it). The piece covers Sony's presentation at the latest RF/FD-SOI workshop in Tokyo (many of the presentation are now posted here). Sony described their design experience with porting a GPS chip to 28nm FD-SOI, which resulted in a... Read more »
  • February 2, 2015 - A 22nm SOI chip is at the heart of IBM’s new z13 mainframe, one of the most sophisticated computer systems ever built. (Augusto Menezes/Feature Photo Service for IBM) - The recently announced IBM z13, which is billed as the world’s fastest microprocessor, is built on SOI (of course!) (read the press release here). - At the heart of the latest in the IBM z-series of mainframes, the... Read more »
  • January 22, 2015 - Leti's M3D technology is now called "CoolCube". (Courtesy: Leti, IEDM 2014) - Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece. Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM’14. Leti’s... Read more »
  • January 22, 2015 - Paul Boudre has been named CEO of Soitec. - Paul Boudre has been named CEO of SOI wafer leader, Soitec (see financial press release here). The company also announced its plans to re-focus on its core electronics business unit. - Q3 sales were 48 million euros, up 45% over last year. The sale of 200mm wafers (which are used in chips for RF-SOI and smartpower) were almost doubled from... Read more »
  • January 12, 2015 - A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click hereto view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s 28nm FDSOI... Read more »
  • January 12, 2015 - New record solar cell on a 100 mm wafer yielding approximately 500 concentrator solar cell devices. (©Fraunhofer ISE/Photo Alexander Wekkeli) - A new world record of 46% for the direct conversion of sunlight into electricity was recently established by Soitec, Leti and the Fraunhofer Institute for Solar Energy Systems ISE (read the press release here). Multi-junction cells are used in... Read more »
  • January 9, 2015 - The IEEE SOI-3D-Subthreshold Microelectronics TechnologyUnified Conference (IEEE S3S) has issued the 2015 Call for Papers. - Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and invited talks on three... Read more »

Latest posts
Composite Substrates Promise Boost for GaN RF Thumbnail

Composite Substrates Promise Boost for GaN RF

Posted by (Soitec) on December 6, 2006
In Advanced Substrate Corners, ASN #6, III-V
Tagged with , , , , ,

Results of the HYPHEN project indicate a new path to high-volume, high-power, and high-frequency wireless applications. The European HYPHEN GaN-RF project is developing and evaluating new types of composite substrates based on silicon and silicon carbide materials. These new substrates are designed to provide cost-efficient solutions for advanced high-power devices used in wireless communication systems […]

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Micragem™ – An SOI-based MEMS Process Platform Thumbnail

Micragem™ – An SOI-based MEMS Process Platform

Posted by (Micralyne) on December 6, 2006
In ASN #6, In & Around Our Industry, MEMS
Tagged with , , ,

Micralyne’s robust, standardized fabrication process reduces time-to-market. One key issue companies face is time-to-market — how long it takes to move a MEMS-based product from an idea to generating revenues. Micragem™ is an SOI-based MEMS fabrication process with a set of design and process guidelines used to prototype and manufacture different types of MEMS components […]

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High-Speed Wafer Bonder Boosts SOI MEMS Productivity Thumbnail

High-Speed Wafer Bonder Boosts SOI MEMS Productivity

Posted on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
Tagged with ,

By eliminating the need for heating and cooling, MHI’s new system brings volume production to standard and SOI MEMS. One of the advantages cited in SOI MEMS design is the ability to create more complex structures serving a wider range of applications. However, the industry’s standard wafer-level packaging can be a challenge, as it typically […]

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Here are some highlights of advanced substrate-related papers published in the second half of 2006 at top conferences and in leading journals.

Posted on December 6, 2006
In ASN #6, Paperlinks
Tagged with

From the IEEE ’06 SOI Conference: “Best Paper” indicates RF on thin HR SOI can open the door to low-cost, mass-market 200GHz applications in the coming year. A paper presented by STMicroelectronics in conjunction with IMEP UMR and IEMN, entitled “State of the art 200 GHz passive components and circuits integrated in advanced thin SOI […]

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Photoreflectance: Promising Metrology on sSOI

Posted by (Optical Metrology Innovations) on July 11, 2006
In ASN #5, Design & Manufacturing, In & Around Our Industry

OMI describes a new approach to in-line strained SOI metrology. Strained-SOI (sSOI) requires fast, accurate and non-contact strain metrology. To address new demands in the engineered substrates industry, several techniques compete: Photoreflectance spectroscopy, Raman spectroscopy, x-ray diffraction and optical birefringence. Photoreflectance appears as one of the most promising of these techniques. Biaxial strain in sSOI […]

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