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Industry Buzz

INDUSTRY BUZZ

  • July 21, 2015 - In an interview with EETimes, GlobalFoundries CEO Sanjay Jha indicated that more than 50% of the Dresden fab output could be FD-SOI by 2018 (read it here). Jha also told EETimes that More-than-Moore technologies can be considered the mainstream. In the piece entitled, Can GloFo and Europe's chip firms unite? author Peter Clarke makes an excellent point that between the four European... Read more »
  • July 21, 2015 - An IBM paper on a 14nm SOI-FinFET SRAM functional down to 0.3V has garnered press attention. The paper, entitled 14nm FinFET Based Supply Voltage Boosting Techniques for Extreme Low Vmin Operation by R.V. Joshi et al, was presented during the Symposium on VLSI Circuits in Kyoto, Japan in June. According to the abstract, the authors presented a new, “... dynamic supply and interconnect... Read more »
  • July 14, 2015 - RF-SOI champion Peregrine Semiconductor has introduced the industry’s first 300mm RF-SOI technology. Dubbed UltraCMOS® 11, it is built on GlobalFoundries’ 130 nm 300mm RF technology platform (read full press release here). - The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the... Read more »
  • July 14, 2015 - SOI-wafer leader Soitec has appointed Grégoire Duban as Chief Financial Officer. This recruitment supports the ongoing strategic refocusing of the Group’s activities on its core electronics business, as Soitec announced on January 19 (read full press release here). Duban will report directly to Soitec CEO Paul Boudre. - “Grégoire Duban possesses over 18 years’ experience in... Read more »
  • July 6, 2015 - Qorvo recently announced that new high-performance SOI components are landing major wins at cellular base station manufacturers. (Read the press release here.) Ideal for broadband communications systems, the highly integrated components significantly reduce external components while lowering cost, power consumption, and weight in wireless infrastructure, test and measurement, and... Read more »
  • July 6, 2015 - Synopsys recently announce that its IC Compiler II place and route solution was used by STMicroelectronics to tape out a complex 28-nm-FD-SOI SoC. (Read the press release here.) Fast throughput and analysis delivered a 10X reduction in time-to-good-floorplan. A 5X faster implementation with 2X smaller memory footprint enabled breakthrough productivity while exceeding quality of results... Read more »
  • June 12, 2015 - SOI wafer leader Soitec and SITRI (aka Shanghai Industrial µTechnology Research Institute) have announced a collaboration agreement. (Read the press release here.) They say the strategic partnership will strengthen their leadership in high-growth wireless communications and the global market for RF apps, with a special emphasis on the fast-developing Chinese RF ecosystem. - They’ll... Read more »
  • June 12, 2015 - Silicon Europe (an alliance of Europe’s leading micro- and nanoelectronics clusters) and the SOI Consortium have organized an SOI Workshop on the 7th of July 2015, during the 10th Silicon Saxony Day in Dresden. - Here’s the agenda: - Quick Introduction - More than Moore Market Analysis and Opportunities (Yole) - Power SOI and applications (NXP) - Foundry offer (GlobalFoundries) -... Read more »
  • May 29, 2015 - CEA-Leti, a leading global center for applied research in microelectronics, nanotechnologies and integrated systems, is proudly hosting its 17th LetiDays in Grenoble on June 24–25, 2015, and associated seminars and workshops on June 22nd, 23rd and 26th (click here to go to the registration site). - On June 22-23, Leti will present their first workshop on FD-SOI. This Forum brings... Read more »
  • May 29, 2015 - RF-SOI specialist Peregrine continues to expand its “SOI University” series of webinars (click here to see the full offering), which has been ongoing for five years now. The latest webinar (the fifteenth in the series) is entitled, Linearity: The Key to Successful Data Transmission in Cable & Beyond. It is presented by Peter Bacon, the company's Director of System Integration.... Read more »
  • May 14, 2015 - Cassette carrying several hundred chips intended for 100 Gb/s transceivers, diced from wafers fabricated with IBM SOI-CMOS Integrated Nano-Photonics Technology. The dense monolithic integration of optical and electrical circuits and the scalable manufacturing process provide a cost-effective silicon photonics interconnect solution, suitable for deployment in cloud servers, datacenters,... Read more »
  • May 14, 2015 - International research teams working on or interested in the far-reaching SOIPIX radiation-detector project have a workshop coming up in June. The project was originally started by KEK* scientists to develop a new detector technology and quantum beam imaging for high-energy particle physics. As research teams around the world (including Japan, USA, China and Europe) joined to take... Read more »
  • April 30, 2015 - A recent GlobalFoundries blog entitled RF-SOI is IoT's Future, and the Future is Bright (read it here) says, “RF SOI is a win-win technology option that can improve performance and data speed in smartphones and tablets, and it is expected to play a key role in the Internet of Things applications as well.” - The blog touches on the full range of benefits of RF-SOI for front-end... Read more »
  • April 30, 2015 - Presentations given at the ‘Beyond Computing' Innovative Technologies Symposium (March 2015 in Shanghai) are now available on the SOI Consortium website (click here to see the list). The Symposium covered MEMS, semiconductor manufacturing, RF and power, which are key topics for the fast growing “More than Moore” industry. The one-day, closed-door symposium was organized by members... Read more »
  • April 27, 2015 - RF-SOI will play a key role in the IoT plans of analog and mixed-signal specialist MagnaChip (read the press release here). The company has launched a task force to address IoT. The statement says, “MagnaChip also offers 0.18 micron and plans to offer 0.13 micron Silicon on Insulator (SOI) RF-CMOS technologies, which is suitable for use in antenna switching, tuner and Power Amplifier... Read more »

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Floating Body RAM Becomes an Industrial Reality Thumbnail

Floating Body RAM Becomes an Industrial Reality

Posted by (Toshiba Corporation) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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Toshiba has successfully developed a high-performance, high-density, low-cost 128Mb FBRAM. FBRAM is Random Access Memory (RAM) with a Floating Body Cell (FBC). It is a capacitor-less DRAM cell consisting of a MOSFET on an SOI wafer. Data “1” and Data “0” are distinguished by the hole density in the floating body of the MOSFET.

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Embedded Memories in SOI Thumbnail

Embedded Memories in SOI

Posted by (IBM) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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Embedded DRAM on SOI is set to proliferate at the 45nm node. Embedded memory now occupies close to 75% of the total chip area. Until a few years ago, this memory was exclusively SRAM, but more recently the industry has seen a significant transition to embedded DRAMs (eDRAMs).

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Harnessing SOI’s Floating Body Effect for Dense Memory Cells Thumbnail

Harnessing SOI’s Floating Body Effect for Dense Memory Cells

Posted by (Innovative Silicon) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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The co-inventor of Z-RAM explains the technology. As a Z-RAM – zero capacitor RAM – memory technology bit cell uses only a transistor plus the floating body effect inherent in SOI processing (see Figure 1), it typically measures only 15-20F² (where F is the technology minimum feature size).

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Ultra-Thin Body & Box (UTB²) SOI Thumbnail

Ultra-Thin Body & Box (UTB²) SOI

Posted by (STMicroelectronics) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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As we approach the end of the roadmap, single gate FD SOI devices with ultra-thin BOX could pre-empt the need for double gate devices. It is well known that UTB (Ultra Thin Body) devices present improved electrostatic integrity. We were, however, among the first to report [1] on the importance of the BOX thickness with […]

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SOI Substrates with Ultra-Thin BOX Thumbnail

SOI Substrates with Ultra-Thin BOX

Posted by (Soitec) on December 6, 2006
In ASN #6, Design & Manufacturing, In & Around Our Industry
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Soitec is now sampling 25nm-thick UT-BOX. Advanced SOI with ultra thin buried oxide (UT-BOX), in which the insulating BOX layer is less than 50nm thick, brings additional benefits to SOI CMOS architecture. It enables: • electrostatic control of the device by back biasing, allowing ultra-low power operation through dynamic Vt control [1, 2]. • the […]

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