ASN
Industry Buzz

INDUSTRY BUZZ

  • February 12, 2016 - Peregrine Semiconductor’s new 75-ohm glitch-less RF digital step attenuator, the UltraCMOS® PE4314, is ideal for wired broadband applications. - RF-SOI pioneer Peregrine Semiconductor has announced theUltraCMOS® PE4314, a 75-ohm glitch-less RF digital step attenuator (DSA). This new DSA extends Peregrine’s existing glitch-less DSA portfolio to 75 ohms. The PE4314 is ideal for... Read more »
  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »
  • December 23, 2015 - Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor's RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are... Read more »
  • December 22, 2015 - Peregrine Semiconductor’s new UltraCMOS® PE44820 is an 8-bit digital phase shifter that delivers exceptional phase accuracy and high linearity for active antenna applications. - RF-SOI pioneer Peregrine Semiconductor has introduced the UltraCMOS® PE44820, an 8-bit digital phase shifter designed for active antenna apps, covering a 358.6-degree phase range. (Read the press release... Read more »
  • December 19, 2015 - Soitec CEO Paul Boudre - VLSI Research Chip Insider has named Soitec CEO Paul Boudre to its roster of 2015 All Stars of the Semiconductor Industry. (See the announcement here.) - Boudre was cited for “...successfully re-organizing Soitec back to its core business as a leading innovative engineered substrate supplier. His first year results are already astounding, with very high growth... Read more »
  • December 17, 2015 - The IEEE S3S (SOI/3D/SubVt) has issued its call for papers for the 2016 conference (click here for details). The theme of the conference, which will take place October 10th – 13th in San Francisco, is "Energy Efficient Technology for the Internet of Things". This industry-wide event gathers together widely known experts, contributed papers and invited talks focused on SOI Technology,... Read more »
  • December 8, 2015 - Citing strong RF-SOI demand, TowerJazz has signed an agreement to purchase Maxim’s 8-inch fab in San Antonio, Texas (shown here). - With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in... Read more »
  • December 8, 2015 - CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si... Read more »
  • November 30, 2015 - Toshiba has announced TaRF8, the next generation in the company's TarfSOI™ (aka Toshiba advanced RF SOI) process, which is optimized for RF switch apps. The first product to use the technology is Toshiba's new SP12T, enabling the lowest-class of insertion loss in the industry. Lowering insertion loss is recognized as particularly important in decreasing RF transmission power loss,... Read more »
  • November 30, 2015 - A recent NewElectronics article entitled ST’s FD-SOI transistor is set to give analogue designers a new knob to tune parameters, explores the many reasons that FD-SOI makes designers happy – even the analog folks. Editor Graham Pitcher talked to analog designer Andreia Cathelin, a senior member of STMicroelectronics’ technical staff. Among plenty of other things, she noted that... Read more »
  • November 27, 2015 - Cadence has announced that its digital and signoff tools are now enabled for the current version of the GLOBALFOUNDRIES® 22FDX™ platform reference flow (see press release here). GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of software-controlled body bias to manage power, performance and leakage needed to create... Read more »
  • November 27, 2015 - The 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee invites active... Read more »
  • November 23, 2015 - Synopsys has announced a comprehensive RTL-to-GDSII solution for GlobalFoundries 22nm technology process. The implementation and signoff tools from the Synopsys Galaxy™ Design Platform have been enabled for the current version of GF's' 22FDX™ platform reference flow. GF has qualified these tools to use body bias to manage power, performance and leakage to achieve optimal energy... Read more »
  • November 23, 2015 - ATopTech, a leader in next-generation physical design solutions, has announced that their Aprisa™ and Apogee™ Place & Route tools are now enabled for the current version of the GlobalFoundries 22FDX™ platform reference flow. GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of using body bias to manage power, performance... Read more »

Latest posts
The Driving Force Thumbnail

The Driving Force

Posted by (Infineon Technologies) on May 11, 2007
In ASN #7, End-User Apps, SOI In Action
Tagged with , , , , , ,

Infineon’s cost-effective SOI technology for driver ICs helps major appliance designers meet stringent energy and reliability parameters. Infineon is using SOI to help tackle one of the biggest challenges faced by designers of major appliances like washing machines, refrigerators and air conditioners: motor control.

Continue ReadingLeave a Comment
SOI for the Real World Thumbnail

SOI for the Real World

Posted by (Texas Instruments) on May 11, 2007
In ASN #7, End-User Apps, SOI In Action
Tagged with , , , , , ,

TI is using SOI in key high-voltage, high-current and high-frequency analog components. The real world is analog. Things like temperature, sound, light, pressure, speed – for this analog data to be integrated into digital systems, it has to be converted. But because the requirements vary enormously among the different analog functions and various systems where […]

Continue ReadingLeave a Comment
Ghavam Shahidi Wins J.J. Ebers Award Thumbnail

Ghavam Shahidi Wins J.J. Ebers Award

Posted on May 11, 2007
In ASN #7, In & Around Our Industry, People
Tagged with ,

For the third year in a row, the IEEE/EDS has given one of its most prestigious prizes to a towering figure in the world of SOI. Ghavam Shahidi, who initiated the SOI development program at IBM in 1989, has received the most recent J.J. Ebers award, “For contributions and leadership in the development of Silicon-On-Insulator […]

Continue ReadingLeave a Comment
Chartered’s Fab 7 Wins SI “Top Fab” Award Thumbnail

Chartered’s Fab 7 Wins SI “Top Fab” Award

Posted on May 11, 2007
In ASN #7, In & Around Our Industry, People
Tagged with , , ,

The world’s first pure-play foundry to offer SOI has received “Semiconductor International” magazine’s top honor. Semiconductor International (SI) magazine has honored Chartered Semiconductor Manufacturing’s Fab 7 with the “Top Fab” award for 2006. With Fab 7, Chartered became the first pure-play foundry to expand into SOI when it began producing SOI-based chips in high-volume for […]

Continue ReadingLeave a Comment
Innovative Silicon Wins ACE, IEEE Spectrum, F&S Awards… and More Thumbnail

Innovative Silicon Wins ACE, IEEE Spectrum, F&S Awards… and More

Posted on May 11, 2007
In ASN #7, In & Around Our Industry, People
Tagged with

ISi and its Z-RAM® memory technology are gaining accolades across the industry. Innovative Silicon (ISi), the developer of Z-RAM® ultra-dense memory intellectual property (IP), is on an awards roll. The company recently announced that IEEE Spectrum Magazine readers named Z-RAM the number one winning technology in its “Winners and Losers” edition. Over 50 percent of […]

Continue ReadingLeave a Comment