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Industry Buzz

INDUSTRY BUZZ

  • April 27, 2015 - RF-SOI will play a key role in the IoT plans of analog and mixed-signal specialist MagnaChip (read the press release here). The company has launched a task force to address IoT. The statement says, “MagnaChip also offers 0.18 micron and plans to offer 0.13 micron Silicon on Insulator (SOI) RF-CMOS technologies, which is suitable for use in antenna switching, tuner and Power Amplifier... Read more »
  • April 27, 2015 - Research and consulting group Semico has issued a new report entitled SOI Update 2015: Finding New Applications (for information on getting a copy of the report, click here). As described on the Semico website: “With the recent growth in RF-SOI for switches and integrated solutions for RF functions such as power amplifiers and transceivers, the opportunities for growth in SOI wafer... Read more »
  • April 21, 2015 - SFARDS' SF3301 cryptocurrency ASIC is the world’s first chip to use 28nm FD-SOI. Surpassing expecttions, it operates at a stunning 0.45Vt supply voltage. (Courtesy: SFARDS) - Right on schedule, the SFARDS cryptocurrency ASIC on 28nm FD-SOI has made its debut in silicon, and is surpassing expectations. In what is clearly a stunning success, the company announced that the ASIC’s... Read more »
  • April 21, 2015 - TEM cross-section of FDSOI transistor (Courtesy of STMicroelectonics) - CEA-Leti’s newest version of its advanced compact model for FD-SOI is now available in all major SPICE simulators (get the press release here). The Leti-UTSOI2.1 is the latest version of Leti’s compact model for FD-SOI, which was first released in 2013. (Compact models of transistors and other elementary devices... Read more »
  • April 9, 2015 - In a new YouTube video, Samsung’s Sr. Director of Foundry Marketing, Kelvin Low, makes a strong case for 28nm FD-SOI, especially for ultra-low-power, IoT, wearables, networking and automotive apps. The five-minute video was taped by ChipEstimate.TV host Sean O’Kane during the Cadence User Conference (CDNLive, Silicon Valley, March 2015 – click here to see it). While the first half... Read more »
  • April 9, 2015 - Hua Hong Semiconductor of Shanghai (a pure-play 200mm foundry operated by HHGrace Semi) recently launched a 0.2μm RF-SOI process design kit (PDK) (click here to read the full press release). The 0.2μm RF-SOI technology platform has been successfully validated and is ready for customers product design and development, says the company. It is tailored and optimized for wireless RF... Read more »
  • March 27, 2015 - The Heterogeneous Technology Alliance (HTA), a coalition of top European R&D organizations, is offering an SOI-MEMS platform. Looking to bridge the gap between academia and industry, this technological platform pools the SOI-MEMS expertise, capabilities and fabrication facilities of Leti (France), Fraunhofer (Germany), CSEM (Switzerland) and VTT (Finland). - The main focus of HTA... Read more »
  • March 27, 2015 - Peregrine Semiconductor teams with Murata to announce the 2015 UltraCMOS® Global 1 Initiative. This new initiative seamlessly integrates the PE56500 all-CMOS RF-SOI front-end solution and Murata filters. - Peregrine Semiconductor and Murata have launched the 2015 UltraCMOS® Global 1 Initiative, which includes the UltraCMOS Global 1 PE56500 and seamlessly integrates Murata filters and... Read more »
  • March 11, 2015 - Cryptocurrency mining hardware company SFARDS is preparing to release its debut miner, which is built on a 28nm FD-SOI ASIC, by April 2015. (You can read the announcement here.) - At the time of this post, tape out of the company’s SF3301ASIC has been announced as complete. Cryptocurrency (the best-known example of which is Bitcoin) depends on “ledgers” supported by bitcoin... Read more »
  • March 11, 2015 - X-FAB is running a series of webinars on very high-temperature design the 18th and 19th of March 2015. A pure-play analog/mixed-signal and specialty foundry, X-FAB’s broad portfolio includes SOI CMOS processes for use at high temperatures up to 225°C. The event is free, but space is limited, so sign up here. - As noted in the program announcement, an increasing number of applications... Read more »
  • March 5, 2015 - With a special blog and video invitation, Samsung pulled out the stops to help get the word out about the recent FD-SOI workshop in San Francisco. Kelvin Low, Sr. Director Foundry Marketing,SamsungSSI, posted Design Faster, Cooler, Smaller Chips with Samsung Foundry’s 28nm FD-SOI Process Technology (read it here). Embedded in the blog is a YouTube video encouraging people to attend... Read more »
  • March 5, 2015 - SemiWiki founder Dan Nenni notes that their 41 FD-SOI related posts to date have drawn over 200,000 views (you can read his whole post about it here). Of that, he notes, over 60,000 came to the site directly via a search for the keyword FD-SOI. “So, if there is a question in your mind as to when FD-SOI will come to the mainstream semiconductor market the answer is very soon,... Read more »
  • March 3, 2015 - Freescale is designing its next generation microprocessor, the iMX7, on 28nm FD-SOI, EETimes has just revealed. This was in an article by Chief International Correspondent Junko Yoshida entitled Freescale, Cisco, Ciena Give Nod to FD-SOI (read it here). Freescale microcontroller SVP & GM Geoff Lees told EETimes the chip’s designed for “'secure' IoT applications, including... Read more »
  • March 3, 2015 - NXP recently expanded its GreenChip line of SOI-based power supply controller ICs with the new TEA1832TS (click here for more product info). Here at ASN, we first covered this line back in 2011 (see that Buzz here), and NXP’s been adding to it ever since. - Smart, green power supplies are one of the most important ways that designers reduce the power consumption of modern electronics.... Read more »
  • February 23, 2015 - SureCore's ultra-low power SRAM technology on 28nm FD-SOI saves 70% in read/write power and reduces leakage by 30% compared to 40nm bulk implementations, writes SemiconductorEngineering Editor-In-Chief Ed Sperling (read the article here). Hitting the sweet spot for mobile, IoT and wearables, SureCore recently raised $1.6 million in... Read more »

Latest posts
Full use of SOI advantages enables small, thin, and low-cost RFIDs Thumbnail

Full use of SOI advantages enables small, thin, and low-cost RFIDs

Posted by (Hitachi) on December 6, 2006
In ASN #6, End-User Apps, SOI In Action
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A lead developer of Hitachi’s µ-chip explains the SOI benefits. By using SOI, we could make an ultra-small RFID chip. In particular, its excellent isolation capability enabled successful miniaturization of the analog circuits in the front-end of the part. Also, BOX (Buried OXide) acts as an etch-stop layer in the self-controlled process, resulting in an […]

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UT BOX SOI: Engineering for Future Low-Power Applications Thumbnail

UT BOX SOI: Engineering for Future Low-Power Applications

Posted by (Soitec) on December 6, 2006
In Advanced Substrate Corners, ASN #6, R&D/Labnews
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Ultra-thin buried oxide may solve some key design challenges at 32nm. Leading-edge microprocessors built on SOI have maximized performance while respecting the power budget by decoupling the Si surface from the substrate with a 150nm-thick buried oxide (BOX). However, moving towards low-power, high- or mid-performance CMOS applications, an increased coupling between the top layer of […]

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Nanomembranes: Just Around the Bend Thumbnail

Nanomembranes: Just Around the Bend

Posted by (UW Madison) on December 6, 2006
In Advanced Substrate Corners, ASN #6, Professor's Perspective
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Starting with SOI wafers, Professor Lagally’s team has developed strain-engineered silicon nanomembranes that could pave the way to flexible, high-speed circuits and more. SOI, beyond its well-known use in CMOS devices, provides the foundation for a new class of structures: strain engineered Si nanomembranes. These membranes offer the promise for new devices or increased performance […]

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Laurent Malier Named CEO of CEA-Leti Thumbnail

Laurent Malier Named CEO of CEA-Leti

Posted on December 6, 2006
In ASN #6, In & Around Our Industry, People
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New leader for one of world’s top microelectronics labs and original home of Smart Cut™ technology. Dr. Laurent Malier has been named as the new CEO of CEA-Leti, one of the world’s leading microelectronics laboratories. Dr. Malier, who holds a PhD in solid state physics, joined Leti two years ago from a major US company […]

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AMD Names Soitec as Best Wafer Fab Materials Supplier Thumbnail

AMD Names Soitec as Best Wafer Fab Materials Supplier

Posted on December 6, 2006
In ASN #6, In & Around Our Industry, People
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World Class Supplier Pathfinder Award recognizes support and commitment. AMD presented its annual WCS Pathfinder Award for Best Wafer Fab Materials Supplier to Soitec during a recent awards banquet in Dresden, Germany, home to AMD’s Fab 30 and AMD Fab 36 manufacturing facilities.

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