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Industry Buzz

INDUSTRY BUZZ

  • July 18, 2014 - Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE... Read more »
  • July 15, 2014 - ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore's Law, and finishes with info on power efficiency, memories, analog and high-speed... Read more »
  • July 15, 2014 - An excellent article highlighting Leti's work on monolithic 3D was recently published in the IEEE's Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they've worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel... Read more »
  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »
  • June 8, 2014 - (Courtesy: SiTime) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics... Read more »
  • June 8, 2014 - Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company's sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI... Read more »
  • May 28, 2014 - In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI... Read more »
  • May 28, 2014 - Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and... Read more »
  • May 28, 2014 - Soitec and Simgui (Shanghai, China) are partnering on SOI wafer production for RF and power applications. The newly signed deal (read press release here) includes a licensing and technology transfer agreement. Simgui will establish a high-volume SOI manufacturing line using Soitec’s proprietary Smart Cut™ technology to directly supply the Chinese market. In addition, Simgui will... Read more »
  • May 19, 2014 - Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories we will cover this month, if not this year, absolutely.”... Read more »
  • May 19, 2014 - The FD-SOI announcement by Samsung and ST represents a tipping point for FD-SOI deployment and for Soitec’s electronics business in the next decade (see Soitec press release here), says the company whose substrate technology makes it all possible. Soitec is the world leader in SOI wafer manufacturing. This announcement validates Soitec’s early strategic technology choice to develop... Read more »
  • May 19, 2014 - Cadence has announcedthe immediate availability of two intellectual property (IP) solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics. (See Cadence press release here.) On this new process node, the Cadence® Denali™ DDR4 IP supports up to 2667Mbps performance,... Read more »
  • May 7, 2014 - A Soitec white paper entitled Innovative RF-SOI Wafers for Wireless Applications is now available on the weSRCH website (see paper here). The paper explains the value of using RF-SOI substrates, and what the latest generation of Soitec’s WaveSOI™ and eSI™ wafers brings to RF IC performance. It also explains how these substrates simplify the IC manufacturing process in order to... Read more »

Latest posts
Foundry, Experts at Shanghai FD-SOI Workshop Indicate Major Opportunities in China Thumbnail

Foundry, Experts at Shanghai FD-SOI Workshop Indicate Major Opportunities in China

Posted by on November 8, 2013
In Advanced Substrate Corners, Conferences, News & Viewpoints, SOI In Action
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Aiming to promote the benefits of SOI technology and reduce the barriers to market adoption, the SOI Industry Consortium (a group of leading companies with the mission of accelerating SOI innovation into broad markets), SIMIT (Shanghai Institute of Microsystem and Information Technology), CAS (a pioneer of SOI technology in China), and VeriSilicon Holdings Co., Ltd. […]

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ASN Exclusive Interview: Skyworks on SOI for RF Thumbnail

ASN Exclusive Interview: Skyworks on SOI for RF

Posted by on November 4, 2013
In Editor's Blog
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Skyworks has a growing portfolio of chips on SOI. Kevin Walsh, the company’s Marketing Director of Analog Solutions, tells ASN why. Advanced Substrate News: Can you tell us generally about Skyworks’ vision and position in the market? Kevin Walsh: Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors and one of the world’s […]

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Back-biasing for FD-SOI – a simple way to meet power/performance targets Thumbnail

Back-biasing for FD-SOI – a simple way to meet power/performance targets

Posted by on November 2, 2013
In Design & Manufacturing, Editor's Blog
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FD-SOI with back-biasing* (BB – also referred to as body-biasing) is an immensely powerful tool, especially for getting great performance at very low voltages with extremely low leakage. Implemented on a smartphone processor, it’s what would give you that extra day of battery life or get you to 3GHz. But what does it mean for […]

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IP Value Starts at the Substrate Level Thumbnail

IP Value Starts at the Substrate Level

Posted by on October 19, 2013
In News & Viewpoints, SOI In Action
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If you say “IP” in the chip business, everyone thinks of cores and design. But in fact, the importance of intellectual property for chips can extend right down to the substrate level. Engineered, advanced wafer substrates open new doors for designers. For example, Soitec recently announcement that we are licensing some of our Smart Stacking™ […]

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Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest Thumbnail

Toshiba Says New RF-SOI Antenna Switch for Smartphones Is Smallest

Posted by on October 14, 2013
In Design & Manufacturing, Editor's Blog
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Another RF-SOI solution is making headlines. Leveraging SOI, Toshiba has announced an SP10T RF antenna switch for the smartphone market. The company says it achieves the industry’s lowest insertion loss and smallest size. The company credits its new generation TaRF5 process, the latest in its line of Toshiba-original TarfSOI™ (Toshiba advanced RF SOI) processes. The […]

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