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Industry Buzz

INDUSTRY BUZZ

  • October 17, 2014 - In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly'sDavid Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. - Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan... Read more »
  • October 17, 2014 - (Courtesy: Sony and Soitec) - SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market. - Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the... Read more »
  • September 26, 2014 - All the presentations made at the SOI Consortium's Shanghai workshops on RF-SOI and FD-SOI are now being posted. - The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. - The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and... Read more »
  • September 26, 2014 - STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). - “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements to IP in the knowledge... Read more »
  • September 17, 2014 - Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums. In his piece When TSMC advocates FD-SOI…, Esteve noted that TSMC's patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on SOI substrates offer... Read more »
  • September 17, 2014 - RF-SOI Pioneer Peregrine has announced new switches for wireless infrastructure and carrier-grade WiFi. The UltraCMOS® PE42442 and PE42452 high-isolation, multi-throw switches address emerging requirements in wireless infrastructure equipment (read press release here). The UltraCMOS® PE42424 RF Switch enables 802.11ac Wi-Fi access points to deliver faster data rates in high-density,... Read more »
  • September 11, 2014 - In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also... Read more »
  • September 11, 2014 - A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI... Read more »
  • September 1, 2014 - An excellent article in SST details Leti's monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D's VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the 'solution for scaling'.”... Read more »
  • September 1, 2014 - Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many wireless markets,... Read more »
  • August 21, 2014 - imec's 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless... Read more »
  • August 21, 2014 - Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “... results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the... Read more »
  • August 8, 2014 - In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation. - “We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that... Read more »
  • August 8, 2014 - Gold Standard Simulations Ltd. (GSS) announced a multimillion dollar contract to license its complete TCAD/EDA tool suite to GlobalFoundries (see press release here). The fully integrated and automated tool chain includes GARAND, the GSS ‘atomistic’ TCAD simulator; Mystic, the GSS statistical compact model extractor; and RandomSpice, the GSS statistical circuit simulator. The GSS... Read more »
  • August 8, 2014 - A new book entitled Silicon-On-Insulator (SOI) Technology, Manufacture and Applications (1st Edition) features contributions by experts at Soitec, GF, TSMC, Leti and more. - Billed as “a complete review of this rapidly growing high-speed, low-power semiconductor technology,” the book covers the entire SOI spectrum, from Moore to More than Moore. It goes into SOI wafer technology,... Read more »

Latest posts
IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers Thumbnail

IEDM ’13 (Part 2): More SOI and Advanced Substrate Papers

Posted by on December 19, 2013
In Conferences, Editor's Blog, Paperlinks
Tagged with , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,

SOI and other advanced substrates were the basis for dozens of excellent papers at IEDM ’13.  Last week we covered the FD-SOI papers (click here if you missed that piece). In this post, we’ll cover the other major SOI et al papers – including those on FinFETs, RF and various advanced devices. Brief summaries, culled […]

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The FD-SOI Papers at IEDM ’13 Thumbnail

The FD-SOI Papers at IEDM ’13

Posted by on December 16, 2013
In Conferences, Editor's Blog, Paperlinks
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FD-SOI was a hot topic at this year’s IEEE International Electron Devices Meeting (IEDM) (www.ieee-iedm.org), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. The FD-SOI papers featured high performance, low leakage, ultra-low power (0.4V),  excellent variability, reliability and scalability down to the 10 nm node using thin SOI […]

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Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries Thumbnail

Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries

Posted by and on December 5, 2013
In Design & Manufacturing, In & Around Our Industry
Tagged with , , , , , , , , , , ,

Soitec has reached high-volume manufacturing of our new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. They are the first ‘trap-rich’ type of material in full production, and are already used in manufacturing by most of the leading RF foundries in front-end modules for 4G and LTE mobile computing and communication applications. […]

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SOITEC and UCL boost the RF performance of SOI substrates Thumbnail

SOITEC and UCL boost the RF performance of SOI substrates

Posted by and (Soitec) on December 4, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, Professor's Perspective, R&D/Labnews
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Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]

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FinFET on SOI: Potential Becomes Reality Thumbnail

FinFET on SOI: Potential Becomes Reality

Posted by on November 26, 2013
In Design & Manufacturing, In & Around Our Industry
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Authors: T. B. Hook, I. Ahsan, A. Kumar, K. McStay, E. Nowak, S. Saroop, C. Schiller, G. Starkey, IBM Semiconductor Research and Development Center We report here empirical results demonstrating the electrical benefits of SOI-based FinFETs. There are benefits inherent in the elimination of dopant as the means to establish the effective device dimensions.  However, […]

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