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Industry Buzz

INDUSTRY BUZZ

  • February 23, 2015 - SureCore's ultra-low power SRAM technology on 28nm FD-SOI saves 70% in read/write power and reduces leakage by 30% compared to 40nm bulk implementations, writes SemiconductorEngineering Editor-In-Chief Ed Sperling (read the article here). Hitting the sweet spot for mobile, IoT and wearables, SureCore recently raised $1.6 million in... Read more »
  • February 23, 2015 - SiTime's SOI-MEMS solution is a key part of a new realtime health and fitness tracking solution from MegaChips called “frizz”. MegaChips has announced a partnership with Bosch Sensortec to provide a complete reference design for use of frizz in smartphones, wearables and other personal devices allowing consumers to monitor their activities in real time (read the press release here).... Read more »
  • February 17, 2015 - A recent post by Eric Esteve on SemiWiki, entitled Sony Endorses FD-SOI to Attack Wearable & IoT (click here to read it) delves into some of the technical and design details of Sony's Tokyo presentation on a 1mW 28nm FD-SOI GPS. (The full presentation is available here. Or click here to read the ASN overview of all the Tokyo presentations.) For the design community, IP expert Esteve... Read more »
  • February 17, 2015 - ARM is working on FD-SOI libraries, and the ecosystem is now there, says David Manners of Electronics Weekly. In two separate pieces, he cited conversations with ARM EVP Pete Hutton. In Microcontrollers Become Major at ARM (click here to read it), Hutton confirmed both the FD-SOI libraries and customers. In Cinderella (click here to read it), Manners looked at all the FD-SOI pieces –... Read more »
  • February 9, 2015 - SemiWiki blogger Paul McLellan has posted another excellent FD-SOI piece, this time covering Samsung's presentation at the recent FD-SOI/RF-SOI Workshop in Tokyo (click here to read it). Within 24 hours of posting, it had already been shared over 60 times on LinkedIn. As always, McLellan puts the presentation in perspective for the design community, calling out key... Read more »
  • February 9, 2015 - (Courtesy: ST, designreuse) - A video made during ST's FD-SOI presentation at IP-SoC 2014 has now been posted by designreuse on YouTube (you can see it here). Over 40 minutes long, it details the European THINGS2DO project, which includes almost 50 partners working on the FD-SOI ecosystem. (This follows onto the PLACES2BE project, which is finishing up this year.) It underscores the... Read more »
  • February 8, 2015 - In a SemiEngineering piece entitled FD-SOI meets the IoT, Executive Editor Ann Steffora Mutschler talked to a couple of design houses working on FD-SOI IoT projects. Synapse Design has taped out multiple chips, and has more projects underway, they told her, with reports of impressive power savings. In close collaboration with a foundry, OpenSilicon is working on an FD-SOI test chip that... Read more »
  • February 8, 2015 - (Courtesy: Peregrine Semiconductor) - Peregrine Semiconductor has unveiled the UltraCMOS® PE42524, the industry's first RF-SOI switch to operate up to 40 GHz (click here for product details, and here for the press release). This switch significantly extends Peregrine's high-frequency portfolio into frequencies previously dominated by gallium arsenide (GaAs) technology. “Our UltraCMOS... Read more »
  • February 2, 2015 - A new EETimes article entitled Sony Joins FD-SOI Club by Chief International Correspondent Junko Yoshida has created a tremendous buzz (click here to read it). The piece covers Sony's presentation at the latest RF/FD-SOI workshop in Tokyo (many of the presentation are now posted here). Sony described their design experience with porting a GPS chip to 28nm FD-SOI, which resulted in a... Read more »
  • February 2, 2015 - A 22nm SOI chip is at the heart of IBM’s new z13 mainframe, one of the most sophisticated computer systems ever built. (Augusto Menezes/Feature Photo Service for IBM) - The recently announced IBM z13, which is billed as the world’s fastest microprocessor, is built on SOI (of course!) (read the press release here). - At the heart of the latest in the IBM z-series of mainframes, the... Read more »
  • January 22, 2015 - Leti's M3D technology is now called "CoolCube". (Courtesy: Leti, IEDM 2014) - Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece. Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM’14. Leti’s... Read more »
  • January 22, 2015 - Paul Boudre has been named CEO of Soitec. - Paul Boudre has been named CEO of SOI wafer leader, Soitec (see financial press release here). The company also announced its plans to re-focus on its core electronics business unit. - Q3 sales were 48 million euros, up 45% over last year. The sale of 200mm wafers (which are used in chips for RF-SOI and smartpower) were almost doubled from... Read more »
  • January 12, 2015 - A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click hereto view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s 28nm FDSOI... Read more »
  • January 12, 2015 - New record solar cell on a 100 mm wafer yielding approximately 500 concentrator solar cell devices. (©Fraunhofer ISE/Photo Alexander Wekkeli) - A new world record of 46% for the direct conversion of sunlight into electricity was recently established by Soitec, Leti and the Fraunhofer Institute for Solar Energy Systems ISE (read the press release here). Multi-junction cells are used in... Read more »
  • January 9, 2015 - The IEEE SOI-3D-Subthreshold Microelectronics TechnologyUnified Conference (IEEE S3S) has issued the 2015 Call for Papers. - Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and invited talks on three... Read more »

Latest posts
Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10 Thumbnail

Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10

Posted on April 25, 2014
In Design & Manufacturing, End-User Apps
Tagged with , , , , , , , , , , , , ,

Interview with : Duncan Pilgrim, VP of marketing ASN had a chance to catch up with Duncan Pilgrim, Peregrine Semi’s new VP of Marketing. Here he shares insights into the company’s new reconfigurable RF front end. Duncan Pilgrim is the VP of marketing at Peregrine Semiconductor. A 17-year semiconductor industry veteran, he previously served as VP […]

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Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance Thumbnail

FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance

Posted by and on March 26, 2014
In Design & Manufacturing, News & Viewpoints
Tagged with , , , , , , , , , ,

By Bich-Yen Nguyen and Christophe Maleville (Soitec) We are in the era of mobile computing with smart handheld devices and remote data storage “in the cloud,” with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life.  With all the ambitious requirements for better […]

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Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets Thumbnail

Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets

Posted by on March 19, 2014
In Design & Manufacturing, News & Viewpoints
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By Handel Jones IBS has recently issued a new white paper entitled Why Migration to 20nm Bulk CMOS and 16/14nm FinFETs Is Not the Best Approach for the Semiconductor Industry.  The focus of the analysis is on technology options that can be used to give lower cost per gate and lower cost per transistor within […]

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FD-SOI Keeps Moore’s Law on Track Thumbnail

FD-SOI Keeps Moore’s Law on Track

Posted by on February 28, 2014
In Editor's Blog, News & Viewpoints
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Take a look at this graph – it’s obvious, isn’t it? FD-SOI is significantly cheaper, outdoes planar bulk and matches bulk FinFET in the performance/power ratio, and keeps the industry on track with Moore’s Law. This was part of a presentation by ST’s Joël Hartmann (EVP of Manufacturing and Process R&D, Embedded Processing Solutions) during Semi’s […]

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