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Industry Buzz

INDUSTRY BUZZ

  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »
  • December 23, 2015 - Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor's RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are... Read more »
  • December 22, 2015 - Peregrine Semiconductor’s new UltraCMOS® PE44820 is an 8-bit digital phase shifter that delivers exceptional phase accuracy and high linearity for active antenna applications. - RF-SOI pioneer Peregrine Semiconductor has introduced the UltraCMOS® PE44820, an 8-bit digital phase shifter designed for active antenna apps, covering a 358.6-degree phase range. (Read the press release... Read more »
  • December 19, 2015 - Soitec CEO Paul Boudre - VLSI Research Chip Insider has named Soitec CEO Paul Boudre to its roster of 2015 All Stars of the Semiconductor Industry. (See the announcement here.) - Boudre was cited for “...successfully re-organizing Soitec back to its core business as a leading innovative engineered substrate supplier. His first year results are already astounding, with very high growth... Read more »
  • December 17, 2015 - The IEEE S3S (SOI/3D/SubVt) has issued its call for papers for the 2016 conference (click here for details). The theme of the conference, which will take place October 10th – 13th in San Francisco, is "Energy Efficient Technology for the Internet of Things". This industry-wide event gathers together widely known experts, contributed papers and invited talks focused on SOI Technology,... Read more »
  • December 8, 2015 - Citing strong RF-SOI demand, TowerJazz has signed an agreement to purchase Maxim’s 8-inch fab in San Antonio, Texas (shown here). - With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in... Read more »
  • December 8, 2015 - CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si... Read more »
  • November 30, 2015 - Toshiba has announced TaRF8, the next generation in the company's TarfSOI™ (aka Toshiba advanced RF SOI) process, which is optimized for RF switch apps. The first product to use the technology is Toshiba's new SP12T, enabling the lowest-class of insertion loss in the industry. Lowering insertion loss is recognized as particularly important in decreasing RF transmission power loss,... Read more »
  • November 30, 2015 - A recent NewElectronics article entitled ST’s FD-SOI transistor is set to give analogue designers a new knob to tune parameters, explores the many reasons that FD-SOI makes designers happy – even the analog folks. Editor Graham Pitcher talked to analog designer Andreia Cathelin, a senior member of STMicroelectronics’ technical staff. Among plenty of other things, she noted that... Read more »
  • November 27, 2015 - Cadence has announced that its digital and signoff tools are now enabled for the current version of the GLOBALFOUNDRIES® 22FDX™ platform reference flow (see press release here). GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of software-controlled body bias to manage power, performance and leakage needed to create... Read more »
  • November 27, 2015 - The 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee invites active... Read more »
  • November 23, 2015 - Synopsys has announced a comprehensive RTL-to-GDSII solution for GlobalFoundries 22nm technology process. The implementation and signoff tools from the Synopsys Galaxy™ Design Platform have been enabled for the current version of GF's' 22FDX™ platform reference flow. GF has qualified these tools to use body bias to manage power, performance and leakage to achieve optimal energy... Read more »
  • November 23, 2015 - ATopTech, a leader in next-generation physical design solutions, has announced that their Aprisa™ and Apogee™ Place & Route tools are now enabled for the current version of the GlobalFoundries 22FDX™ platform reference flow. GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of using body bias to manage power, performance... Read more »
  • October 28, 2015 - Renesas Electronics will be coming out with chips built on 65nm FD-SOI technology by spring of 2016, reports EETimes Japan (see article in Japanese here, or a version translated by Google here). Although the story dates from February 2015, it has barely been covered in the English-speaking press. (FD-SOI expert Ali Khakifirooz talked about it briefly in a SemiWiki piece last month... Read more »

Latest posts
How SOI wafers for RF predict LTE-A/5G device performance Thumbnail

How SOI wafers for RF predict LTE-A/5G device performance

Posted by and on February 17, 2015
In Design & Manufacturing, SOI In Action
Tagged with , , , , , , , , , , , , ,

Soitec has developed an innovative metrology and metric for ensuring that devices built on our latest SOI wafers for RF will meet the draconian demands of LTE-Advanced (LTE-A) and 5G network standards. For smartphones and tablets to handle LTE-A and 5G, they need RF devices with much higher linearity than those running over the current […]

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Tokyo FD-SOI/RF-SOI Workshop (part 2): Sony 1mW FD-SOI GPS steals the show, but great presentations from EDA & design houses, too Thumbnail

Tokyo FD-SOI/RF-SOI Workshop (part 2): Sony 1mW FD-SOI GPS steals the show, but great presentations from EDA & design houses, too

Posted by on February 9, 2015
In Design & Manufacturing, Editor's Blog
Tagged with , , , , , , , , , , , , , , , , , , , , ,

The Sony presentation on a 28nm FD-SOI GPS chip for an IoT app, which cut power by 10x (down to 1mW), has gained enormous traction worldwide.  However, that was just one of a dozen excellent presentations made by industry leaders at the recent FD-SOI/RF-SOI workshop in Tokyo. In part 1 of ASN’s coverage of the […]

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Tokyo FD-SOI/RF-SOI Workshop (part 1): Samsung, ST presentations & more Thumbnail

Tokyo FD-SOI/RF-SOI Workshop (part 1): Samsung, ST presentations & more

Posted by on February 8, 2015
In Design & Manufacturing, Editor's Blog
Tagged with , , , , , , , , , , , , ,

A dozen excellent presentations on FD-SOI and RF-SOI were made by industry leaders at the recent workshop in Tokyo. Here in part 1 of ASN’s coverage, we’ll take a quick look at the presentations by Samsung, ST, IBS, IBM and Lapis. In part 2, we’ll look at Sony’s, as well as the presentations from the […]

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LTE-A/5G: Bring it on.  Next-gen Soitec eSI90 wafers predict & improve RF performance. Thumbnail

LTE-A/5G: Bring it on. Next-gen Soitec eSI90 wafers predict & improve RF performance.

Posted by on February 2, 2015
In Design & Manufacturing, Editor's Blog
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The folks at SOI wafer maker Soitec have announced an amazing update to their RF wafer line-up, with what they’re calling their eSI90 substrate (read the press release here). As you might expect, it improves on their terrifically successful line of substrates for the RF chips in smartphones and other mobile devices. And now with […]

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2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
In Editor's Blog
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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