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Industry Buzz

INDUSTRY BUZZ

  • August 8, 2014 - In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation. - “We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that... Read more »
  • August 8, 2014 - Gold Standard Simulations Ltd. (GSS) announced a multimillion dollar contract to license its complete TCAD/EDA tool suite to GlobalFoundries (see press release here). The fully integrated and automated tool chain includes GARAND, the GSS ‘atomistic’ TCAD simulator; Mystic, the GSS statistical compact model extractor; and RandomSpice, the GSS statistical circuit simulator. The GSS... Read more »
  • August 8, 2014 - A new book entitled Silicon-On-Insulator (SOI) Technology, Manufacture and Applications (1st Edition) features contributions by experts at Soitec, GF, TSMC, Leti and more. - Billed as “a complete review of this rapidly growing high-speed, low-power semiconductor technology,” the book covers the entire SOI spectrum, from Moore to More than Moore. It goes into SOI wafer technology,... Read more »
  • July 18, 2014 - Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE... Read more »
  • July 15, 2014 - ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore's Law, and finishes with info on power efficiency, memories, analog and high-speed... Read more »
  • July 15, 2014 - An excellent article highlighting Leti's work on monolithic 3D was recently published in the IEEE's Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they've worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel... Read more »
  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »
  • June 8, 2014 - (Courtesy: SiTime) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics... Read more »
  • June 8, 2014 - Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company's sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI... Read more »
  • May 28, 2014 - In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI... Read more »
  • May 28, 2014 - Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and... Read more »
  • May 28, 2014 - Soitec and Simgui (Shanghai, China) are partnering on SOI wafer production for RF and power applications. The newly signed deal (read press release here) includes a licensing and technology transfer agreement. Simgui will establish a high-volume SOI manufacturing line using Soitec’s proprietary Smart Cut™ technology to directly supply the Chinese market. In addition, Simgui will... Read more »
  • May 19, 2014 - Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories we will cover this month, if not this year, absolutely.”... Read more »

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The FD-SOI Papers at IEDM ’13 Thumbnail

The FD-SOI Papers at IEDM ’13

Posted by on December 16, 2013
In Conferences, Editor's Blog, Paperlinks
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FD-SOI was a hot topic at this year’s IEEE International Electron Devices Meeting (IEDM) (www.ieee-iedm.org), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. The FD-SOI papers featured high performance, low leakage, ultra-low power (0.4V),  excellent variability, reliability and scalability down to the 10 nm node using thin SOI […]

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Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries Thumbnail

Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries

Posted by and on December 5, 2013
In Design & Manufacturing, In & Around Our Industry
Tagged with , , , , , , , , , , ,

Soitec has reached high-volume manufacturing of our new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. They are the first ‘trap-rich’ type of material in full production, and are already used in manufacturing by most of the leading RF foundries in front-end modules for 4G and LTE mobile computing and communication applications. […]

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SOITEC and UCL boost the RF performance of SOI substrates Thumbnail

SOITEC and UCL boost the RF performance of SOI substrates

Posted by and (Soitec) on December 4, 2013
In Advanced Substrate Corners, Design & Manufacturing, In & Around Our Industry, Professor's Perspective, R&D/Labnews
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Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]

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FinFET on SOI: Potential Becomes Reality Thumbnail

FinFET on SOI: Potential Becomes Reality

Posted by on November 26, 2013
In Design & Manufacturing, In & Around Our Industry
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Authors: T. B. Hook, I. Ahsan, A. Kumar, K. McStay, E. Nowak, S. Saroop, C. Schiller, G. Starkey, IBM Semiconductor Research and Development Center We report here empirical results demonstrating the electrical benefits of SOI-based FinFETs. There are benefits inherent in the elimination of dopant as the means to establish the effective device dimensions.  However, […]

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The IEEE S3S Conference Delivered Impressive Technical Content Thumbnail

The IEEE S3S Conference Delivered Impressive Technical Content

Posted by on November 18, 2013
In Conferences
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The new IEEE S3S conference promised rich content, as it merged both The IEEE International SOI Conference and the IEEE Subthreshold Microelectronics Conference, completed by an additional track on 3D Integration. The result was an excellent conference, with outstanding presentations from key players in each of the three topics covered. This quality was reflected in the increased attendance: almost 50% more […]

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